IRLR3705Z Todos los transistores

 

IRLR3705Z MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRLR3705Z

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 130 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 55 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 16 V

|Id|ⓘ - Corriente continua de drenaje: 89 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 150 nS

Cossⓘ - Capacitancia de salida: 420 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.008 Ohm

Encapsulados: DPAK

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IRLR3705Z datasheet

 ..1. Size:340K  international rectifier
irlr3705zpbf irlu3705zpbf.pdf pdf_icon

IRLR3705Z

PD - 95956A IRLR3705ZPbF IRLU3705ZPbF Features Logic Level Advanced Process Technology HEXFET Power MOSFET Ultra Low On-Resistance D 175 C Operating Temperature VDSS = 55V Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free RDS(on) = 8.0m G Description ID = 42A This HEXFET Power MOSFET utilizes the latest S processing techniques to achieve extremel

 ..2. Size:242K  inchange semiconductor
irlr3705z.pdf pdf_icon

IRLR3705Z

isc N-Channel MOSFET Transistor IRLR3705Z, IIRLR3705Z FEATURES Static drain-source on-resistance RDS(on) 8.0m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast Switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 55 V DSS V Ga

 0.1. Size:287K  international rectifier
auirlr3705ztr.pdf pdf_icon

IRLR3705Z

PD - 97611 AUTOMOTIVE GRADE AUIRLR3705Z Features HEXFET Power MOSFET Logic Level Advanced Process Technology D V(BR)DSS 55V Ultra Low On-Resistance 175 C Operating Temperature RDS(on) max. 8.0m Fast Switching G ID (Silicon Limited) 89A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant S ID (Package Limited) 42A Automotiv

 0.2. Size:670K  infineon
auirlr3705z.pdf pdf_icon

IRLR3705Z

AUTOMOTIVE GRADE AUIRLR3705Z Features HEXFET Power MOSFET Advanced Process Technology Logic-Level VDSS 55V Ultra Low On-Resistance RDS(on) max. 8.0m 175 C Operating Temperature Fast Switching ID (Silicon Limited) 89A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant ID (Package Limited) 42A Automotive Quali

Otros transistores... IRLP3034 , IRLR024Z , IRLR2905Z , IRLR2908 , IRLR3105 , IRLR3110Z , IRLR3114Z , IRLR3636 , SKD502T , IRLR3714Z , IRLR3715Z , IRLR3715ZC , IRLR3717 , IRLR3802 , IRLR3915 , IRLR6225 , IRLR7807Z .

History: SN6F22NSFP | STWA48N60M2 | STE38NB50 | WMN25N70EM | CS40N20FA9E | 2SK1449 | 2SK3919-ZK

 

 

 

 

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