IRLR3705Z. Аналоги и основные параметры
Наименование производителя: IRLR3705Z
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ
- Максимальная рассеиваемая мощность: 130 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 55 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 16 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 89 A
Tj ⓘ - Максимальная температура канала: 175 °C
Электрические характеристики
tr ⓘ -
Время нарастания: 150 ns
Cossⓘ - Выходная емкость: 420 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.008 Ohm
Тип корпуса: DPAK
Аналог (замена) для IRLR3705Z
- подборⓘ MOSFET транзистора по параметрам
IRLR3705Z даташит
..1. Size:340K international rectifier
irlr3705zpbf irlu3705zpbf.pdf 

PD - 95956A IRLR3705ZPbF IRLU3705ZPbF Features Logic Level Advanced Process Technology HEXFET Power MOSFET Ultra Low On-Resistance D 175 C Operating Temperature VDSS = 55V Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free RDS(on) = 8.0m G Description ID = 42A This HEXFET Power MOSFET utilizes the latest S processing techniques to achieve extremel
..2. Size:242K inchange semiconductor
irlr3705z.pdf 

isc N-Channel MOSFET Transistor IRLR3705Z, IIRLR3705Z FEATURES Static drain-source on-resistance RDS(on) 8.0m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast Switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 55 V DSS V Ga
0.1. Size:287K international rectifier
auirlr3705ztr.pdf 

PD - 97611 AUTOMOTIVE GRADE AUIRLR3705Z Features HEXFET Power MOSFET Logic Level Advanced Process Technology D V(BR)DSS 55V Ultra Low On-Resistance 175 C Operating Temperature RDS(on) max. 8.0m Fast Switching G ID (Silicon Limited) 89A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant S ID (Package Limited) 42A Automotiv
0.2. Size:670K infineon
auirlr3705z.pdf 

AUTOMOTIVE GRADE AUIRLR3705Z Features HEXFET Power MOSFET Advanced Process Technology Logic-Level VDSS 55V Ultra Low On-Resistance RDS(on) max. 8.0m 175 C Operating Temperature Fast Switching ID (Silicon Limited) 89A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant ID (Package Limited) 42A Automotive Quali
8.1. Size:122K international rectifier
irlr3715.pdf 

PD - 94177 SMPS MOSFET IRLR3715 IRLU3715 HEXFET Power MOSFET Applications VDSS RDS(on) max ID High Frequency Isolated DC-DC Converters with Synchronous Rectification 20V 14m 54A for Telecom and Industrial Use High Frequency Buck Converters for Computer Processor Power Benefits Ultra-Low Gate Impedance Very Low RDS(on) at 4.5V VGS Fully Characterized Avalanche Voltage
8.2. Size:297K international rectifier
irlr3715zcpbf irlu3715zcpbf.pdf 

PD - 96053 IRLR3715ZCPbF IRLU3715ZCPbF Applications HEXFET Power MOSFET l High Frequency Synchronous Buck VDSS RDS(on) max Qg Converters for Computer Processor Power 20V 11m 7.2nC l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l Lead-Free Benefits l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage D-Pa
8.3. Size:115K international rectifier
irlr3714 irlu3714.pdf 

PD - 94266 IRLR3714 SMPS MOSFET IRLU3714 HEXFET Power MOSFET Applications VDSS RDS(on) max ID High Frequency Isolated DC-DC Converters with Synchronous Rectification 20V 20m 36A for Telecom and Industrial Use High Frequency Buck Converters for Computer Processor Power Benefits Ultra-Low Gate Impedance Very Low RDS(on) at 4.5V VGS Fully Characterized Avalanche Voltag
8.4. Size:266K international rectifier
irlr3717pbf irlu3717pbf.pdf 

PD - 95776A IRLR3717PbF IRLU3717PbF Applications HEXFET Power MOSFET l High Frequency Synchronous Buck VDSS RDS(on) max Qg Converters for Computer Processor Power l High Frequency Isolated DC-DC 20V 4.0m 21nC Converters with Synchronous Rectification for Telecom and Industrial Use l Lead-Free Benefits l Very Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance D-Pak I-Pak l
8.5. Size:271K international rectifier
irlu3715pbf irlr3715pbf.pdf 

PD - 95555A SMPS MOSFET IRLR3715PbF IRLU3715PbF HEXFET Power MOSFET Applications VDSS RDS(on) max ID l High Frequency Isolated DC-DC Converters with Synchronous Rectification 20V 14m 54A for Telecom and Industrial Use l High Frequency Buck Converters for Computer Processor Power l Lead-Free Benefits l Ultra-Low Gate Impedance l Very Low RDS(on) at 4.5V VGS D-Pak I-Pak
8.6. Size:204K international rectifier
irlr3715z.pdf 

PD - 94650A IRLR3715Z IRLU3715Z HEXFET Power MOSFET Applications VDSS RDS(on) max Qg l High Frequency Synchronous Buck Converters for Computer Processor Power 20V 11m 7.2nC l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use Benefits l Very Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance D-Pak I-Pak l Fully Characteriz
8.7. Size:222K international rectifier
irlu3714pbf irlr3714pbf.pdf 

PD - 95554A IRLR3714PbF SMPS MOSFET IRLU3714PbF HEXFET Power MOSFET Applications l High Frequency Isolated DC-DC VDSS RDS(on) max ID Converters with Synchronous Rectification 20V 20m 36A for Telecom and Industrial Use l High Frequency Buck Converters for Computer Processor Power l Lead-Free Benefits l Ultra-Low Gate Impedance l Very Low RDS(on) at 4.5V VGS D-Pak I-Pak
8.8. Size:266K international rectifier
irlu3717pbf irlr3717pbf.pdf 

PD - 95776A IRLR3717PbF IRLU3717PbF Applications HEXFET Power MOSFET l High Frequency Synchronous Buck VDSS RDS(on) max Qg Converters for Computer Processor Power l High Frequency Isolated DC-DC 20V 4.0m 21nC Converters with Synchronous Rectification for Telecom and Industrial Use l Lead-Free Benefits l Very Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance D-Pak I-Pak l
8.9. Size:324K international rectifier
irlu3715zpbf irlr3715zpbf.pdf 

PD - 95088A IRLR3715ZPbF IRLU3715ZPbF HEXFET Power MOSFET Applications VDSS RDS(on) max Qg l High Frequency Synchronous Buck Converters for Computer Processor Power 20V 11m 7.2nC l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l Lead-Free Benefits D-Pak I-Pak l Ultra-Low Gate Impedance IRLR3715Z IRLU3715Z l Fully Cha
8.10. Size:111K international rectifier
irlr3714.pdf 

PD - 94266 IRLR3714 SMPS MOSFET IRLU3714 HEXFET Power MOSFET Applications VDSS RDS(on) max ID High Frequency Isolated DC-DC Converters with Synchronous Rectification 20V 20m 36A for Telecom and Industrial Use High Frequency Buck Converters for Computer Processor Power Benefits Ultra-Low Gate Impedance Very Low RDS(on) at 4.5V VGS Fully Characterized Avalanche Voltag
8.11. Size:262K international rectifier
irlu3714zpbf irlr3714zpbf.pdf 

PD - 95775A IRLR3714ZPbF IRLU3714ZPbF HEXFET Power MOSFET Applications VDSS RDS(on) max Qg l High Frequency Synchronous Buck Converters for Computer Processor Power 20V 15m 4.7nC l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l Lead-Free Benefits l Very Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance D-Pak I-Pak l
8.12. Size:125K international rectifier
irlr3715 irlu3715.pdf 

PD - 94177 SMPS MOSFET IRLR3715 IRLU3715 HEXFET Power MOSFET Applications VDSS RDS(on) max ID High Frequency Isolated DC-DC Converters with Synchronous Rectification 20V 14m 54A for Telecom and Industrial Use High Frequency Buck Converters for Computer Processor Power Benefits Ultra-Low Gate Impedance Very Low RDS(on) at 4.5V VGS Fully Characterized Avalanche Voltage
8.13. Size:242K inchange semiconductor
irlr3715z.pdf 

isc N-Channel MOSFET Transistor IRLR3715Z, IIRLR3715Z FEATURES Static drain-source on-resistance RDS(on) 11m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High Frequency Synchronous Buck Converters For Computer Processor Power ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PAR
8.14. Size:241K inchange semiconductor
irlr3717.pdf 

isc N-Channel MOSFET Transistor IRLR3717, IIRLR3717 FEATURES Static drain-source on-resistance RDS(on) 4m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast Switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 20 V DSS V Gate-S
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