IRLR8729 Todos los transistores

 

IRLR8729 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRLR8729
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 55 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 58 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 47 nS
   Cossⓘ - Capacitancia de salida: 280 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0089 Ohm
   Paquete / Cubierta: DPAK
 

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IRLR8729 Datasheet (PDF)

 ..1. Size:347K  international rectifier
irlu8729pbf irlr8729pbf.pdf pdf_icon

IRLR8729

PD - 97352BIRLR8729PbFIRLU8729PbFHEXFET Power MOSFETApplicationsl High Frequency Synchronous BuckVDSS RDS(on) maxQgConverters for Computer Processor Power30V 8.9m 10nCl High Frequency Isolated DC-DC Converters with Synchronous RectificationD for Telecom and Industrial UseBenefitsS Sl Very Low RDS(on) at 4.5V VGSDG Gl Ultra-Low Gate Impedancel Fully C

 ..2. Size:347K  international rectifier
irlr8729pbf irlu8729pbf.pdf pdf_icon

IRLR8729

PD - 97352BIRLR8729PbFIRLU8729PbFHEXFET Power MOSFETApplicationsl High Frequency Synchronous BuckVDSS RDS(on) maxQgConverters for Computer Processor Power30V 8.9m 10nCl High Frequency Isolated DC-DC Converters with Synchronous RectificationD for Telecom and Industrial UseBenefitsS Sl Very Low RDS(on) at 4.5V VGSDG Gl Ultra-Low Gate Impedancel Fully C

 ..3. Size:243K  inchange semiconductor
irlr8729.pdf pdf_icon

IRLR8729

isc N-Channel MOSFET Transistor IRLR8729,IIRLR8729FEATURESStatic drain-source on-resistance:RDS(on)8.9mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFully characterized avalanche voltage and currentABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drai

 0.1. Size:232K  international rectifier
irlr8729pbf-1.pdf pdf_icon

IRLR8729

IRLR8729PbF-1HEXFET Power MOSFETVDS 30 VDDRDS(on) max 8.9 m(@V = 10V)GSSQg (typical) 10 nCGGID 58 AD-PakS(@T = 25C)CIRLR8729PbF-1Features BenefitsIndustry-standard pinout D-Pak and I-Pak Multi-Vendor CompatibilityCompatible with Existing Surface Mount Techniques Easier ManufacturingRoHS Compliant, Halogen-Free Environmentally Friendlier

Otros transistores... IRLR7833 , IRLR7843 , IRLR8103V , IRLR8113 , IRLR8256 , IRLR8259 , IRLR8721 , IRLR8726 , STF13NM60N , IRLR8743 , IRLS3034 , IRLS3034-7P , IRLS3036 , IRLS3036-7P , IRLS4030 , IRLS4030-7P , IRLSL3034 .

History: SWF10N80K2 | TMC8N65H | HRS88N08K | NCE3008N | KIA2N60H-252 | WMQ37N03T1 | RU30E4B

 

 
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