IRLR8729 Todos los transistores

 

IRLR8729 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRLR8729

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 55 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 58 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 47 nS

Cossⓘ - Capacitancia de salida: 280 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0089 Ohm

Encapsulados: DPAK

 Búsqueda de reemplazo de IRLR8729 MOSFET

- Selecciónⓘ de transistores por parámetros

 

IRLR8729 datasheet

 ..1. Size:347K  international rectifier
irlu8729pbf irlr8729pbf.pdf pdf_icon

IRLR8729

PD - 97352B IRLR8729PbF IRLU8729PbF HEXFET Power MOSFET Applications l High Frequency Synchronous Buck VDSS RDS(on) max Qg Converters for Computer Processor Power 30V 8.9m 10nC l High Frequency Isolated DC-DC Converters with Synchronous Rectification D for Telecom and Industrial Use Benefits S S l Very Low RDS(on) at 4.5V VGS D G G l Ultra-Low Gate Impedance l Fully C

 ..2. Size:347K  international rectifier
irlr8729pbf irlu8729pbf.pdf pdf_icon

IRLR8729

PD - 97352B IRLR8729PbF IRLU8729PbF HEXFET Power MOSFET Applications l High Frequency Synchronous Buck VDSS RDS(on) max Qg Converters for Computer Processor Power 30V 8.9m 10nC l High Frequency Isolated DC-DC Converters with Synchronous Rectification D for Telecom and Industrial Use Benefits S S l Very Low RDS(on) at 4.5V VGS D G G l Ultra-Low Gate Impedance l Fully C

 ..3. Size:243K  inchange semiconductor
irlr8729.pdf pdf_icon

IRLR8729

isc N-Channel MOSFET Transistor IRLR8729,IIRLR8729 FEATURES Static drain-source on-resistance RDS(on) 8.9m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fully characterized avalanche voltage and current ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drai

 0.1. Size:232K  international rectifier
irlr8729pbf-1.pdf pdf_icon

IRLR8729

IRLR8729PbF-1 HEXFET Power MOSFET VDS 30 V D D RDS(on) max 8.9 m (@V = 10V) GS S Qg (typical) 10 nC G G ID 58 A D-Pak S (@T = 25 C) C IRLR8729PbF-1 Features Benefits Industry-standard pinout D-Pak and I-Pak Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easier Manufacturing RoHS Compliant, Halogen-Free Environmentally Friendlier

Otros transistores... IRLR7833 , IRLR7843 , IRLR8103V , IRLR8113 , IRLR8256 , IRLR8259 , IRLR8721 , IRLR8726 , IRFP250 , IRLR8743 , IRLS3034 , IRLS3034-7P , IRLS3036 , IRLS3036-7P , IRLS4030 , IRLS4030-7P , IRLSL3034 .

History: FDMC86260 | FDMS8333L | WMO10N70D1 | WML10N70EM

 

 

 

 

↑ Back to Top
.