IRLR8729 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: IRLR8729
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 55 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 2.35 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 58 A
Tjⓘ - Максимальная температура канала: 175 °C
Qgⓘ - Общий заряд затвора: 10 nC
trⓘ - Время нарастания: 47 ns
Cossⓘ - Выходная емкость: 280 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0089 Ohm
Тип корпуса: DPAK
IRLR8729 Datasheet (PDF)
irlu8729pbf irlr8729pbf.pdf
PD - 97352BIRLR8729PbFIRLU8729PbFHEXFET Power MOSFETApplicationsl High Frequency Synchronous BuckVDSS RDS(on) maxQgConverters for Computer Processor Power30V 8.9m 10nCl High Frequency Isolated DC-DC Converters with Synchronous RectificationD for Telecom and Industrial UseBenefitsS Sl Very Low RDS(on) at 4.5V VGSDG Gl Ultra-Low Gate Impedancel Fully C
irlr8729pbf irlu8729pbf.pdf
PD - 97352BIRLR8729PbFIRLU8729PbFHEXFET Power MOSFETApplicationsl High Frequency Synchronous BuckVDSS RDS(on) maxQgConverters for Computer Processor Power30V 8.9m 10nCl High Frequency Isolated DC-DC Converters with Synchronous RectificationD for Telecom and Industrial UseBenefitsS Sl Very Low RDS(on) at 4.5V VGSDG Gl Ultra-Low Gate Impedancel Fully C
irlr8729.pdf
isc N-Channel MOSFET Transistor IRLR8729,IIRLR8729FEATURESStatic drain-source on-resistance:RDS(on)8.9mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFully characterized avalanche voltage and currentABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drai
irlr8729pbf-1.pdf
IRLR8729PbF-1HEXFET Power MOSFETVDS 30 VDDRDS(on) max 8.9 m(@V = 10V)GSSQg (typical) 10 nCGGID 58 AD-PakS(@T = 25C)CIRLR8729PbF-1Features BenefitsIndustry-standard pinout D-Pak and I-Pak Multi-Vendor CompatibilityCompatible with Existing Surface Mount Techniques Easier ManufacturingRoHS Compliant, Halogen-Free Environmentally Friendlier
irlr8729tr.pdf
IRLR8729TRwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.005 at VGS = 10 V 8030 31 nC0.006 at VGS = 4.5 V 68APPLICATIONSD OR-ingTO-252 Server DC/DCGG D STop ViewSN-Channel MOSFETABSO
irlu8721pbf irlr8721pbf.pdf
IRLR8721PbFIRLU8721PbFHEXFET Power MOSFETApplicationsVDSS RDS(on) maxQgl High Frequency Synchronous BuckConverters for Computer Processor Power30V 8.4m 8.5nCl High Frequency Isolated DC-DC Converters with Synchronous RectificationD for Telecom and Industrial Usel Lead-FreeS SDG GBenefitsD-Pakl Very Low RDS(on) at 4.5V VGS I-PakIRLR8721PbFIRLU8721PbF
irlu8726pbf irlr8726pbf.pdf
PD - 97146AIRLR8726PbFIRLU8726PbFHEXFET Power MOSFETApplicationsl High Frequency Synchronous BuckVDSS RDS(on) max Qg (typ.)Converters for Computer Processor Power30V 5.8m @VGS = 10V 15nCl High Frequency Isolated DC-DC Converters with Synchronous RectificationDD for Telecom and Industrial UseBenefitsSl Very Low RDS(on) at 4.5V VGSSDDGl Ultra-Low Gate I
irlr8721pbf-1.pdf
IRLR8721PbF-1HEXFET Power MOSFETVDS 30 VDDRDS(on) max 8.4 m(@V = 10V)GSSGQg (typical) 8.5 nCGID 65 A D-PakS(@T = 25C)CIRLR8721PbF-1Features BenefitsIndustry-standard pinout D-Pak Multi-Vendor CompatibilityCompatible with Existing Surface Mount Techniques Easier ManufacturingRoHS Compliant, Halogen-Free Environmentally FriendlierMSL1, Indu
irlr8726pbf irlu8726pbf.pdf
PD - 97146AIRLR8726PbFIRLU8726PbFHEXFET Power MOSFETApplicationsl High Frequency Synchronous BuckVDSS RDS(on) max Qg (typ.)Converters for Computer Processor Power30V 5.8m @VGS = 10V 15nCl High Frequency Isolated DC-DC Converters with Synchronous RectificationDD for Telecom and Industrial UseBenefitsSl Very Low RDS(on) at 4.5V VGSSDDGl Ultra-Low Gate I
irlr8726.pdf
isc N-Channel MOSFET Transistor IRLR8726, IIRLR8726FEATURESStatic drain-source on-resistance:RDS(on)5.8mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh Frequency Synchronous Buck Converters For ComputerProcessor PowerABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARA
irlr8721.pdf
isc N-Channel MOSFET Transistor IRLR8721, IIRLR8721FEATURESStatic drain-source on-resistance:RDS(on)8.4mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh Frequency Synchronous Buck Converters For ComputerProcessor PowerABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARA
Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918