IRLS4030 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IRLS4030
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 370 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 16 V
   |Id|ⓘ - Corriente continua de drenaje: 180 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.5 V
   Qgⓘ - Carga de la puerta: 87 nC
   trⓘ - Tiempo de subida: 330 nS
   Cossⓘ - Capacitancia de salida: 670 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0043 Ohm
   Paquete / Cubierta: D2PAK

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IRLS4030 Datasheet (PDF)

..1. Size:382K international rectifier
irls4030pbf irlsl4030pbf.pdf

PD - 97370IRLS4030PbFIRLSL4030PbFApplicationsHEXFET Power MOSFETl DC Motor DriveDl High Efficiency Synchronous Rectification in SMPSVDSS100Vl Uninterruptible Power SupplyRDS(on) typ.l High Speed Power Switching3.4ml Hard Switched and High Frequency CircuitsG max. 4.3mID 180ASBenefitsl Optimized for Logic Level Drivel Very Low RDS(ON) at 4.

..2. Size:382K infineon
irls4030pbf irlsl4030pbf.pdf

..3. Size:258K inchange semiconductor
irls4030.pdf

Isc N-Channel MOSFET Transistor IRLS4030FEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volt

0.1. Size:287K international rectifier
irls4030-7ppbf.pdf

PD -97371IRLS4030-7PPbFHEXFET Power MOSFETApplicationsDl DC Motor DriveVDSS100Vl High Efficiency Synchronous Rectification in SMPSRDS(on) typ.3.2ml Uninterruptible Power Supplyl High Speed Power SwitchingG max. 3.9ml Hard Switched and High Frequency CircuitsID 190ASBenefitsl Optimized for Logic Level DriveDl Very Low RDS(ON) at 4.5V VGSl

0.2. Size:501K infineon
auirls4030 auirlsl4030.pdf

AUIRLS4030 AUTOMOTIVE GRADE AUIRLSL4030 Features HEXFET Power MOSFET Optimized for Logic Level Drive Advanced Process Technology D VDSS 100V Ultra Low On-Resistance RDS(on) typ. 3.4m Logic Level Gate Drive G175C Operating Temperature max 4.3mFast Switching S Repetitive Avalanche Allowed up to Tjmax ID

0.3. Size:686K infineon
auirls4030-7p.pdf

AUTOMOTIVE GRADE AUIRLS4030-7P HEXFET Power MOSFET Features Optimized for Logic Level Drive VDSS 100V Advanced Process Technology RDS(on) typ. 3.2m Ultra Low On-Resistance Logic Level Gate Drive max. 3.9m 175C Operating Temperature ID 190A Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compl

0.4. Size:287K infineon
irls4030-7ppbf.pdf

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

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