IRLS4030 - аналоги, параметры транзистора - Справочник транзисторов

IRLS4030 даташит

..1. Size:382K international rectifier
irls4030pbf irlsl4030pbf.pdf pdf_icon

PD - 97370 IRLS4030PbF IRLSL4030PbF Applications HEXFET Power MOSFET l DC Motor Drive D l High Efficiency Synchronous Rectification in SMPS VDSS 100V l Uninterruptible Power Supply RDS(on) typ. l High Speed Power Switching 3.4m l Hard Switched and High Frequency Circuits G max. 4.3m ID 180A S Benefits l Optimized for Logic Level Drive l Very Low RDS(ON) at 4.

..2. Size:258K inchange semiconductor
irls4030.pdf pdf_icon

Isc N-Channel MOSFET Transistor IRLS4030 FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Volt

0.1. Size:287K international rectifier
irls4030-7ppbf.pdf pdf_icon

PD -97371 IRLS4030-7PPbF HEXFET Power MOSFET Applications D l DC Motor Drive VDSS 100V l High Efficiency Synchronous Rectification in SMPS RDS(on) typ. 3.2m l Uninterruptible Power Supply l High Speed Power Switching G max. 3.9m l Hard Switched and High Frequency Circuits ID 190A S Benefits l Optimized for Logic Level Drive D l Very Low RDS(ON) at 4.5V VGS l

0.2. Size:501K infineon
auirls4030 auirlsl4030.pdf pdf_icon

AUIRLS4030 AUTOMOTIVE GRADE AUIRLSL4030 Features HEXFET Power MOSFET Optimized for Logic Level Drive Advanced Process Technology D VDSS 100V Ultra Low On-Resistance RDS(on) typ. 3.4m Logic Level Gate Drive G 175 C Operating Temperature max 4.3m Fast Switching S Repetitive Avalanche Allowed up to Tjmax ID