IRLU3110Z Todos los transistores

 

IRLU3110Z MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRLU3110Z

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 140 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 16 V

|Id|ⓘ - Corriente continua de drenaje: 63 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 110 nS

Cossⓘ - Capacitancia de salida: 310 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.014 Ohm

Encapsulados: IPAK

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IRLU3110Z datasheet

 ..1. Size:317K  international rectifier
 irlr3110zpbf irlu3110zpbf.pdf pdf_icon

IRLU3110Z

PD - 97175B IRLR3110ZPbF IRLU3110ZPbF Features HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance D 175 C Operating Temperature Fast Switching VDSS = 100V Repetitive Avalanche Allowed up to Tjmax G RDS(on) = 14m Description Specifically designed for Industrial applications, this HEXFET Power MOSFET utilizes the latest S processing techniques to

 ..2. Size:317K  international rectifier
 irlu3110zpbf irlr3110zpbf.pdf pdf_icon

IRLU3110Z

PD - 97175B IRLR3110ZPbF IRLU3110ZPbF Features HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance D 175 C Operating Temperature Fast Switching VDSS = 100V Repetitive Avalanche Allowed up to Tjmax G RDS(on) = 14m Description Specifically designed for Industrial applications, this HEXFET Power MOSFET utilizes the latest S processing techniques to

 ..3. Size:261K  inchange semiconductor
 irlu3110z.pdf pdf_icon

IRLU3110Z

isc N-Channel MOSFET Transistor IRLU3110Z FEATURES With TO-251(IPAK) packaging High speed switching Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply DC-DC converters Motor control Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE U

 0.1. Size:714K  infineon
 auirlr3110z auirlu3110z.pdf pdf_icon

IRLU3110Z

AUIRLR3110Z AUTOMOTIVE GRADE AUIRLU3110Z Features HEXFET Power MOSFET Advanced Process Technology VDSS 100V Ultra Low On-Resistance RDS(on) typ. 11m Logic Level Gate Drive max. 14m 175 C Operating Temperature ID (Silicon Limited) 63A Fast Switching ID (Package Limited) 42A Repetitive Avalanche Allowed up to Tjmax Lea

MOSTRAR MÁS

Otros transistores... IRLSL3034 , IRLSL3036 , IRLSL4030 , IRLTS6342 , IRLU024Z , IRLU2905Z , IRLU2908 , IRLU3105 , P60NF06 , IRLU3114Z , IRLU3636 , IRLU3705Z , IRLU3714Z , IRLU3715Z , IRLU3717 , IRLU3802 , IRLU3915 .

History: FDB12N50F | AUIRFR4105 | IRLU3714Z

 

 

 

 

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