IRLU3110Z - описание и поиск аналогов

PD - 97175B IRLR3110ZPbF IRLU3110ZPbF Features HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance D 175 C Operating Temperature Fast Switching VDSS = 100V Repetitive Avalanche Allowed up to Tjmax G RDS(on) = 14m Description Specifically designed for Industrial applications, this HEXFET Power MOSFET utilizes the latest S processing techniques to

PD - 97175B IRLR3110ZPbF IRLU3110ZPbF Features HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance D 175 C Operating Temperature Fast Switching VDSS = 100V Repetitive Avalanche Allowed up to Tjmax G RDS(on) = 14m Description Specifically designed for Industrial applications, this HEXFET Power MOSFET utilizes the latest S processing techniques to

isc N-Channel MOSFET Transistor IRLU3110Z FEATURES With TO-251(IPAK) packaging High speed switching Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply DC-DC converters Motor control Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE U

AUIRLR3110Z AUTOMOTIVE GRADE AUIRLU3110Z Features HEXFET Power MOSFET Advanced Process Technology VDSS 100V Ultra Low On-Resistance RDS(on) typ. 11m Logic Level Gate Drive max. 14m 175 C Operating Temperature ID (Silicon Limited) 63A Fast Switching ID (Package Limited) 42A Repetitive Avalanche Allowed up to Tjmax Lea

PD - 97284A IRLR3114ZPbF IRLU3114ZPbF Features HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance D 175 C Operating Temperature Fast Switching VDSS = 40V Repetitive Avalanche Allowed up to Tjmax Logic Level G RDS(on) = 4.9m Description This HEXFET Power MOSFET utilizes the latest S processing techniques to achieve extremely low on-resistance

PD - 97284A IRLR3114ZPbF IRLU3114ZPbF Features HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance D 175 C Operating Temperature Fast Switching VDSS = 40V Repetitive Avalanche Allowed up to Tjmax Logic Level G RDS(on) = 4.9m Description This HEXFET Power MOSFET utilizes the latest S processing techniques to achieve extremely low on-resistance

AUIRLR3114Z AUTOMOTIVE GRADE AUIRLU3114Z Features HEXFET Power MOSFET Advanced Process Technology VDSS 40V Ultra Low On-Resistance Logic Level Gate Drive RDS(on) typ. 4.9m 175 C Operating Temperature max. 6.5m Fast Switching ID (Silicon Limited) 130A Repetitive Avalanche Allowed up to Tjmax ID (Package Limited) 42A L

isc N-Channel MOSFET Transistor IRLU3114Z FEATURES With TO-251(IPAK) packaging High speed switching Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply DC-DC converters Motor control Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE U