SI4420DY MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SI4420DY
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 12.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1(min) V
   Qgⓘ - Carga de la puerta: 52 nC
   trⓘ - Tiempo de subida: 10 nS
   Cossⓘ - Capacitancia de salida: 1100 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.009 Ohm
   Paquete / Cubierta: SO8

Búsqueda de reemplazo de MOSFET SI4420DY

SI4420DY Datasheet (PDF)

..1. Size:111K international rectifier
si4420dy.pdf

PD - 93835Si4420DYHEXFET Power MOSFET N-Channel MOSFETAA Low On-Resistance 1 8S DVDSS = 30V Low Gate Charge2 7S D Surface Mount3 6S D Logic Level Drive4 5G DRDS(on) = 0.009Top ViewDescriptionThis N-channel HEXFET power MOSFET is producedusing International Rectifier's advanced HEXFET powerMOSFET technology. The low on-resistance and low gate

..2. Size:281K fairchild semi
si4420dy.pdf

January 2000Si4420DY*Single N-Channel Logic Level PowerTrench MOSFETGeneral Description FeaturesThis N-Channel Logic Level MOSFET is produced using 12.5 A, 30 V. RDS(ON) = 0.009 W @ VGS = 10 VFairchild Semiconductor's advanced PowerTrench processRDS(ON) = 0.013 W @ VGS = 4.5 Vthat has been especially tailored to minimize on-stateresistance and yet maintain superior switc

..3. Size:58K vishay
si4420dy.pdf

Si4420DYVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARYD TrenchFETr Power MOSFETVDS (V) rDS(on) (W) ID (A)D 100% Rg Tested0.009 @ VGS = 10 V 13.530300.013 @ VGS = 4.5 V 11DSO-8SD1 8GSD2 7SD3 6GD4 5Top View SOrdering Information: Si4420DYN-Channel MOSFETSi4420DY-T1 (with Tape and Reel)ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNL

..4. Size:114K vishay
si4420dypbf si4420dytrpbf.pdf

PD - 95729Si4420DYPbFHEXFET Power MOSFETl N-Channel MOSFETAAl Low On-Resistance1 8S DVDSS = 30Vl Low Gate Charge2 7S Dl Surface Mount3 6S Dl Logic Level Drive4 5l Lead-Free G DRDS(on) = 0.009Top ViewDescriptionThis N-channel HEXFET power MOSFET is producedusing International Rectifier's advanced HEXFET powerMOSFET technology. The low on-res

..5. Size:943K cn vbsemi
si4420dy.pdf

SI4420DYwww.VBsemi.twN-Channel 650 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 650AvailableRequirementRDS(on) ()VGS = 10 V 3.8RoHS Improved Gate, Avalanche and Dynamic dV/dtQg (Max.) (nC) 15RuggednessQgs (nC) 3 Fully Characterized Capacitance and Avalanche Voltageand CurrentQgd (nC) 6 Compliant to RoHS

0.1. Size:106K vishay
si4420dytr.pdf

8.1. Size:248K vishay
si4420bdy.pdf

Si4420BDYVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Definition0.0085 at VGS = 10 V 13.5 TrenchFET Power MOSFET300.0110 at VGS = 4.5 V 11 100 % Rg Tested SO-8DS1 8 DS D2 7S3 6 DG D4 5GTop ViewSOrdering Information:Si4420BDY-T1-E3 (Lea

9.1. Size:252K vishay
si4425dd.pdf

Si4425DDYVishay SiliconixP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.0098 at VGS = 10 V - 19.7 TrenchFET Power MOSFET- 30 27 nC 100 % Rg Tested0.0165 at VGS = 4.5 V - 15.2APPLICATIONS Load Switches- Notebook PCs- Desktop PCsSO-8SSD1 8SD2

9.2. Size:95K vishay
si4425dy.pdf

Si4425DYVishay SiliconixP-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYVDS (V) rDS(on) (W) ID (A)FEATURES0.014 @ VGS = -10 V-11D TrenchFETr Power MOSFET-30-300.023 @ VGS = -4.5 V -8.5 Pb-freeAvailableSO-8SSD1 8S D2 7GSD3 6G D4 5Top ViewDOrdering Information: Si4425DYSi4425DY-T1 (with Tape and Reel)P-Channel MOSFET: Si4425DYE3 (Lead (Pb)-Fr

9.3. Size:227K vishay
si4426dy.pdf

Si4426DYVishay SiliconixN-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Definition0.025 at VGS = 4.5 V 8.5 TrenchFET Power MOSFETs 200.035 at VGS = 2.5 V 7.1 Compliant to RoHS Directive 2002/95/ECDSO-8 SD1 8 SD2 7 GSD3 6 GD4 5 Top View SOrdering Informatio

9.4. Size:224K vishay
si4421dy.pdf

Si4421DYVishay SiliconixP-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free Option AvailableVDS (V) RDS(on) ()ID (A) TrenchFET Power MOSFET 0.00875 at VGS = - 4.5 V - 14RoHSCOMPLIANT0.01075 at VGS = - 2.5 V - 20 - 12APPLICATIONS Game Station0.0135 at VGS = - 1.8 V - 11- Load SwitchSO-8 S S1 8 D S D 2 7 S3 6 D GG

9.5. Size:76K vishay
si4427dy.pdf

Si4427DYNew ProductVishay SiliconixP-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYFEATURESVDS (V) rDS(on) (W) ID (A) D TrenchFETr Power MOSFETs0.0105 @ VGS = 10 V13.330 0.0125 @ VGS = 4.5 V 12.20.0195 @ VGS = 2.5 V 9.8SSO-8SD1 8GS D2 7SD3 6G D4 5DTop ViewOrdering Information: Si4427DY-T1P-Channel MOSFETSi4427DY-T1E3 (Lead (P

9.6. Size:224K vishay
si4423dy.pdf

Si4423DYVishay SiliconixP-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Definition0.0075 at VGS = - 4.5 V - 14 TrenchFET Power MOSFET 0.009 at VGS = - 2.5 V - 13- 20 Compliant to RoHS Directive 2002/95/EC0.0115 at VGS = - 1.8 V - 12APPLICATIONS Game StationSO-8 - Load Switc

9.7. Size:227K vishay
si4427bdy.pdf

Si4427BDYVishay SiliconixP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Definition0.0105 at VGS = - 10 V - 12.6 TrenchFET Power MOSFETs0.0125 at VGS = - 4.5 V - 11.5- 30 Compliant to RoHS Directive 2002/95/EC0.0195 at VGS = - 2.5 V - 9.2SO-8S1 8 D SS D2 7S3 6 DGG

9.8. Size:48K vishay
si4429ed.pdf

Si4429EDYNew ProductVishay SiliconixP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARYD TrenchFETr Power MOSFETVDS (V) rDS(on) (W) ID (A)D VGS Surge Protection to 18 VD ESD Protected: 4000 V0.0105 @ VGS = 10 V13.030 0.0125 @ VGS = 4.5 V 12.0 APPLICATIONS0.0195 @ VGS = 2.5 V 9.0 D Battery SwitchD Load SwitchDSO-85.5 kWSD1 8GS D2 7

9.9. Size:254K vishay
si4425ddy.pdf

9.10. Size:227K vishay
si4425bdy.pdf

Si4425BDYVishay SiliconixP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Definition0.012 at VGS = - 10 V - 11.4 TrenchFET Power MOSFET- 300.019 at VGS = - 4.5 V - 9.1 Advanced High Cell Density Process Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Load Switches-

9.11. Size:224K vishay
si4427bd.pdf

9.12. Size:826K cn vbsemi
si4425dy-t1-e3.pdf

SI4425DY-T1-E3www.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Available0.0125 at VGS = - 10 V - 11.6 TrenchFET Power MOSFET- 30 22 nC 100 % Rg Tested0.0180 at VGS = - 4.5 V - 10 100 % UIS TestedAPPLICATIONS Load SwitchesS - Notebook PCsSO-8- Deskt

9.13. Size:855K cn vbsemi
si4425bdy.pdf

SI4425BDYwww.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Available0.0125 at VGS = - 10 V - 11.6 TrenchFET Power MOSFET- 30 22 nC 100 % Rg Tested0.0180 at VGS = - 4.5 V - 10 100 % UIS TestedAPPLICATIONS Load SwitchesS - Notebook PCsSO-8- Desktop PC

9.14. Size:803K cn vbsemi
si4421dy-t1.pdf

SI4421DY-T1www.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)d Qg (Typ.) TrenchFET Power MOSFET0.011 at VGS = - 10 V - 13.5 100 % Rg TestedRoHS- 30 29.5 nCCOMPLIANT 100 % UIS Tested0.015 at VGS = - 4.5 V - 11.6APPLICATIONS Load Switch Notebook Adaptor SwitchSO-8 S S1 8 DS D2 7

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

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