SI4420DY PDF and Equivalents Search

 

SI4420DY Specs and Replacement

Type Designator: SI4420DY

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 12.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 1100 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm

Package: SO8

SI4420DY substitution

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SI4420DY datasheet

 ..1. Size:111K  international rectifier
si4420dy.pdf pdf_icon

SI4420DY

PD - 93835 Si4420DY HEXFET Power MOSFET N-Channel MOSFET A A Low On-Resistance 1 8 S D VDSS = 30V Low Gate Charge 2 7 S D Surface Mount 3 6 S D Logic Level Drive 4 5 G D RDS(on) = 0.009 Top View Description This N-channel HEXFET power MOSFET is produced using International Rectifier's advanced HEXFET power MOSFET technology. The low on-resistance and low gate ... See More ⇒

 ..2. Size:281K  fairchild semi
si4420dy.pdf pdf_icon

SI4420DY

January 2000 Si4420DY* Single N-Channel Logic Level PowerTrench MOSFET General Description Features This N-Channel Logic Level MOSFET is produced using 12.5 A, 30 V. RDS(ON) = 0.009 W @ VGS = 10 V Fairchild Semiconductor's advanced PowerTrench process RDS(ON) = 0.013 W @ VGS = 4.5 V that has been especially tailored to minimize on-state resistance and yet maintain superior switc... See More ⇒

 ..3. Size:58K  vishay
si4420dy.pdf pdf_icon

SI4420DY

Si4420DY Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFET VDS (V) rDS(on) (W) ID (A) D 100% Rg Tested 0.009 @ VGS = 10 V 13.5 30 30 0.013 @ VGS = 4.5 V 11 D SO-8 SD 1 8 G SD 2 7 SD 3 6 GD 4 5 Top View S Ordering Information Si4420DY N-Channel MOSFET Si4420DY-T1 (with Tape and Reel) ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNL... See More ⇒

 ..4. Size:114K  vishay
si4420dypbf si4420dytrpbf.pdf pdf_icon

SI4420DY

PD - 95729 Si4420DYPbF HEXFET Power MOSFET l N-Channel MOSFET A A l Low On-Resistance 1 8 S D VDSS = 30V l Low Gate Charge 2 7 S D l Surface Mount 3 6 S D l Logic Level Drive 4 5 l Lead-Free G D RDS(on) = 0.009 Top View Description This N-channel HEXFET power MOSFET is produced using International Rectifier's advanced HEXFET power MOSFET technology. The low on-res... See More ⇒

Detailed specifications: IRLU8259, IRLU8721, IRLU8726, IRLU8729, IRLU8743, IRLZ44Z, IRLZ44ZL, IRLZ44ZS, IRF730, AUIRF1010EZ, AUIRF1010EZL, AUIRF1010EZS, AUIRF1010Z, AUIRF1010ZL, AUIRF1010ZS, AUIRF1018E, AUIRF1018ES

Keywords - SI4420DY MOSFET specs

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