AUIRF1018E MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AUIRF1018E

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 110 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 79 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0084 Ohm

Encapsulados: TO220AB

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AUIRF1018E datasheet

 ..1. Size:156K  infineon
 auirf1018e.pdf pdf_icon

AUIRF1018E

International Rectifier Product Detail Page Page 1 of 2 Part Se AUIRF1018E Part Automotive Q101 60V Single N-Channel HEXFET Power MOSFET in a TO-220AB Package Description Support Docs N/A Commercial Datasheet Reliability Report Automotive Market IR serves the automotive market with a dedicated product portfolio, with high quality and automotive certified development, manufact

 0.1. Size:658K  infineon
 auirf1018es.pdf pdf_icon

AUIRF1018E

AUTOMOTIVE GRADE AUIRF1018ES HEXFET Power MOSFET Features VDSS 60V Advanced Process Technology RDS(on) typ. Ultra Low On-Resistance 7.1m 175 C Operating Temperature max. 8.4m Fast Switching Repetitive Avalanche Allowed up to Tjmax ID 79A Lead-Free, RoHS Compliant Automotive Qualified * D Description Specifically designed fo

 6.1. Size:375K  international rectifier
 auirf1010ezstrl.pdf pdf_icon

AUIRF1018E

PD - 95962 AUTOMOTIVE GRADE AUIRF1010EZ AUIRF1010EZS AUIRF1010EZL Features HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance D V(BR)DSS 60V 175 C Operating Temperature Fast Switching RDS(on) max. 8.5m Repetitive Avalanche Allowed up to Tjmax G ID (Silicon Limited) 84A Lead-Free, RoHS Compliant S Automotive Qualified * ID (Package Limited)

 6.2. Size:268K  international rectifier
 auirf1010zstrl.pdf pdf_icon

AUIRF1018E

PD - 97458A AUIRF1010Z AUTOMOTIVE GRADE AUIRF1010ZS AUIRF1010ZL Features Advanced Process Technology HEXFET Power MOSFET Ultra Low On-Resistance D 175 C Operating Temperature V(BR)DSS 55V Fast Switching Repetitive Avalanche Allowed up to RDS(on) max. 7.5m Tjmax G Lead-Free, RoHS Compliant ID (Silicon Limited) 94A Automotive Qualified * S

MOSTRAR MÁS

Otros transistores... IRLZ44ZS, SI4420DY, AUIRF1010EZ, AUIRF1010EZL, AUIRF1010EZS, AUIRF1010Z, AUIRF1010ZL, AUIRF1010ZS, IRF540, AUIRF1018ES, AUIRF1324, AUIRF1324S, AUIRF1324S-7P, AUIRF1324WL, AUIRF1404, AUIRF1404L, AUIRF1404S