Справочник MOSFET. AUIRF1018E

 

AUIRF1018E Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: AUIRF1018E
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 110 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 79 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0084 Ohm
   Тип корпуса: TO220AB
     - подбор MOSFET транзистора по параметрам

 

AUIRF1018E Datasheet (PDF)

 ..1. Size:156K  infineon
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AUIRF1018E

International Rectifier Product Detail Page Page 1 of 2Part Se AUIRF1018EPart: Automotive Q101 60V Single N-Channel HEXFET Power MOSFET in a TO-220AB PackageDescription:Support Docs: N/A Commercial Datasheet Reliability ReportAutomotive MarketIR serves the automotive market with a dedicated product portfolio, with high quality and automotive certified development, manufact

 0.1. Size:658K  infineon
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AUIRF1018E

AUTOMOTIVE GRADE AUIRF1018ES HEXFET Power MOSFET Features VDSS 60V Advanced Process Technology RDS(on) typ. Ultra Low On-Resistance 7.1m 175C Operating Temperature max. 8.4m Fast Switching Repetitive Avalanche Allowed up to Tjmax ID 79A Lead-Free, RoHS Compliant Automotive Qualified * D Description Specifically designed fo

 6.1. Size:375K  international rectifier
auirf1010ezstrl.pdfpdf_icon

AUIRF1018E

PD - 95962AUTOMOTIVE GRADEAUIRF1010EZAUIRF1010EZSAUIRF1010EZLFeaturesHEXFET Power MOSFET Advanced Process Technology Ultra Low On-ResistanceDV(BR)DSS60V 175C Operating Temperature Fast Switching RDS(on) max.8.5m Repetitive Avalanche Allowed up to TjmaxGID (Silicon Limited)84A Lead-Free, RoHS CompliantS Automotive Qualified *ID (Package Limited)

 6.2. Size:268K  international rectifier
auirf1010zstrl.pdfpdf_icon

AUIRF1018E

PD - 97458AAUIRF1010ZAUTOMOTIVE GRADEAUIRF1010ZSAUIRF1010ZLFeatures Advanced Process Technology HEXFET Power MOSFET Ultra Low On-ResistanceD 175C Operating TemperatureV(BR)DSS55V Fast Switching Repetitive Avalanche Allowed up toRDS(on) max.7.5mTjmaxG Lead-Free, RoHS CompliantID (Silicon Limited)94A Automotive Qualified *S

Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: FDG361N | FL6L5201 | BF862 | HTJ440P03 | CHM4955JGP | BUK9MJJ-55PTT | DMC2004LPK

 

 
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