AUIRF2807 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AUIRF2807
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 230 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 75 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 82 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 64 nS
Cossⓘ - Capacitancia de salida: 610 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.013 Ohm
Encapsulados: TO220AB
Búsqueda de reemplazo de AUIRF2807 MOSFET
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AUIRF2807 datasheet
auirf2807.pdf
PD - 96384A AUTOMOTIVE GRADE AUIRF2807 HEXFET Power MOSFET Features V(BR)DSS 75V l Advanced Planar Technology D l Low On-Resistance l Dynamic dV/dT Rating RDS(on) max. 13m l 175 C Operating Temperature l Fast Switching G ID(Silicon Limited) 82A l Fully Avalanche Rated l Repetitive Avalanche Allowed up to Tjmax S ID (Package Limited) 75A l Lead-Free, RoHS Compliant l Au
auirf2804wl.pdf
PD - 97739 AUTOMOTIVE GRADE AUIRF2804WL HEXFET Power MOSFET Features D V(BR)DSS l Advanced Process Technology 40V l Ultra Low On-Resistance RDS(on) max. 1.8m l 175 C Operating Temperature G l Fast Switching ID (Silicon Limited) 295A l Repetitive Avalanche Allowed up to Tjmax S ID (Package Limited) 240A l Lead-Free, RoHS Compliant l Automotive Qualified * Description
auirf2805l auirf2805s.pdf
PD - 96383A AUTOMOTIVE GRADE AUIRF2805S AUIRF2805L HEXFET Power MOSFET Features D Advanced Planar Technology V(BR)DSS 55V Low On-Resistance Dynamic dV/dT Rating RDS(on) max. 4.7m 175 C Operating Temperature G Fast Switching Fully Avalanche Rated S ID 135A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * Description Sp
auirf2805.pdf
PD - 97690A AUTOMOTIVE GRADE AUIRF2805 Features l Advanced Planar Technology HEXFET Power MOSFET l Low On-Resistance l 175 C Operating Temperature D V(BR)DSS 55V l Fast Switching RDS(on) typ. 3.9m l Fully Avalanche Rated max 4.7m l Repetitive Avalanche Allowed G up to Tjmax ID (Silicon Limited) 175A l Lead-Free, RoHS Compliant S ID (Package Limited) 75A l Autom
Otros transistores... AUIRF1405ZS , AUIRF2804 , AUIRF2804L , AUIRF2804S , AUIRF2804S-7P , AUIRF2805 , AUIRF2805L , AUIRF2805S , IRF9540 , AUIRF2903Z , AUIRF2903ZL , AUIRF2903ZS , AUIRF2907Z , AUIRF2907ZS-7P , AUIRF3004WL , AUIRF3007 , AUIRF3205 .
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