AUIRF2807 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AUIRF2807
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 230 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 75 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 82 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 VQgⓘ - Carga de la puerta: 160 nC
trⓘ - Tiempo de subida: 64 nS
Cossⓘ - Capacitancia de salida: 610 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.013 Ohm
Paquete / Cubierta: TO220AB
- Selección de transistores por parámetros
AUIRF2807 Datasheet (PDF)
auirf2807.pdf

PD - 96384AAUTOMOTIVE GRADEAUIRF2807HEXFET Power MOSFETFeaturesV(BR)DSS75Vl Advanced Planar Technology Dl Low On-Resistancel Dynamic dV/dT RatingRDS(on) max.13ml 175C Operating Temperaturel Fast SwitchingGID(Silicon Limited) 82Al Fully Avalanche Ratedl Repetitive Avalanche Allowed up to TjmaxSID (Package Limited) 75Al Lead-Free, RoHS Compliantl Au
auirf2804wl.pdf

PD - 97739AUTOMOTIVE GRADEAUIRF2804WLHEXFET Power MOSFETFeaturesDV(BR)DSSl Advanced Process Technology 40Vl Ultra Low On-ResistanceRDS(on) max.1.8ml 175C Operating TemperatureGl Fast Switching ID (Silicon Limited)295Al Repetitive Avalanche Allowed up to TjmaxSID (Package Limited)240Al Lead-Free, RoHS Compliantl Automotive Qualified *Description
auirf2805l auirf2805s.pdf

PD - 96383AAUTOMOTIVE GRADEAUIRF2805SAUIRF2805LHEXFET Power MOSFETFeaturesD Advanced Planar TechnologyV(BR)DSS55V Low On-Resistance Dynamic dV/dT RatingRDS(on) max.4.7m 175C Operating TemperatureG Fast Switching Fully Avalanche RatedS ID 135A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified *DescriptionSp
auirf2805.pdf

PD - 97690AAUTOMOTIVE GRADEAUIRF2805Featuresl Advanced Planar TechnologyHEXFET Power MOSFETl Low On-Resistancel 175C Operating TemperatureDV(BR)DSS55Vl Fast SwitchingRDS(on) typ.3.9ml Fully Avalanche Ratedmax 4.7ml Repetitive Avalanche AllowedGup to TjmaxID (Silicon Limited)175Al Lead-Free, RoHS CompliantSID (Package Limited)75Al Autom
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: AP2308GE
History: AP2308GE



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