AUIRF7737L2TR MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AUIRF7737L2TR
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 3.3 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 31 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 19 nS
Cossⓘ - Capacitancia de salida: 1193 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0019 Ohm
Paquete / Cubierta: DIRECTFET
Búsqueda de reemplazo de AUIRF7737L2TR MOSFET
AUIRF7737L2TR Datasheet (PDF)
auirf7737l2tr auirf7737l2tr1.pdf
PD - 96315CAUIRF7737L2TRAUTOMOTIVE GRADEAUIRF7737L2TR1 Automotive DirectFET Power MOSFET Advanced Process TechnologyV(BR)DSS40V Optimized for Automotive Motor Drive, DC-DC andRDS(on) typ.1.5mother Heavy Load Applications Exceptionally Small Footprint and Low Profilemax. 1.9m High Power DensityID (Silicon Limited)156A Low Parasitic Par
auirf7737l2tr1.pdf
PD - 96315CAUIRF7737L2TRAUTOMOTIVE GRADEAUIRF7737L2TR1 Automotive DirectFET Power MOSFET Advanced Process TechnologyV(BR)DSS40V Optimized for Automotive Motor Drive, DC-DC andRDS(on) typ.1.5mother Heavy Load Applications Exceptionally Small Footprint and Low Profilemax. 1.9m High Power DensityID (Silicon Limited)156A Low Parasitic Par
auirf7738l2tr.pdf
PD - 96333AAUIRF7738L2TRAUTOMOTIVE GRADEAUIRF7738L2TR1 Automotive DirectFET Power MOSFET V(BR)DSS 40V Advanced Process Technology Optimized for Automotive Motor Drive, DC-DC and RDS(on) typ.1.2mother Heavy Load Applicationsmax. 1.6m Exceptionally Small Footprint and Low Profile High Power Density ID (Silicon Limited)184A Low Parasitic Parame
auirf7736m2tr1.pdf
PD - 96316BAUIRF7736M2TRAUTOMOTIVE GRADEAUIRF7736M2TR1 Automotive DirectFET Power MOSFET Advanced Process Technology V(BR)DSS40V Optimized for Automotive Motor Drive, DC-DC andRDS(on) typ.2.5mother Heavy Load Applications Exceptionally Small Footprint and Low Profile max. 3.0m High Power DensityID (Silicon Limited)108A Low Parasitic Param
Otros transistores... AUIRF7478Q , AUIRF7640S2 , AUIRF7647S2TR , AUIRF7648M2TR , AUIRF7665S2 , AUIRF7669L2TR , AUIRF7675M2 , AUIRF7736M2TR , IRF520 , AUIRF7738L2 , AUIRF7739L2 , AUIRF7805Q , AUIRF9540N , AUIRF9Z34N , AUIRFB3004 , AUIRFB3006 , AUIRFB3077 .
History: NCE6080K
History: NCE6080K
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