AUIRF7737L2TR MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AUIRF7737L2TR
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 3.3 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 31 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 19 nS
Cossⓘ - Capacitancia de salida: 1193 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0019 Ohm
Encapsulados: DIRECTFET
Búsqueda de reemplazo de AUIRF7737L2TR MOSFET
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AUIRF7737L2TR datasheet
auirf7737l2tr auirf7737l2tr1.pdf
PD - 96315C AUIRF7737L2TR AUTOMOTIVE GRADE AUIRF7737L2TR1 Automotive DirectFET Power MOSFET Advanced Process Technology V(BR)DSS 40V Optimized for Automotive Motor Drive, DC-DC and RDS(on) typ. 1.5m other Heavy Load Applications Exceptionally Small Footprint and Low Profile max. 1.9m High Power Density ID (Silicon Limited) 156A Low Parasitic Par
auirf7737l2tr1.pdf
PD - 96315C AUIRF7737L2TR AUTOMOTIVE GRADE AUIRF7737L2TR1 Automotive DirectFET Power MOSFET Advanced Process Technology V(BR)DSS 40V Optimized for Automotive Motor Drive, DC-DC and RDS(on) typ. 1.5m other Heavy Load Applications Exceptionally Small Footprint and Low Profile max. 1.9m High Power Density ID (Silicon Limited) 156A Low Parasitic Par
auirf7738l2tr.pdf
PD - 96333A AUIRF7738L2TR AUTOMOTIVE GRADE AUIRF7738L2TR1 Automotive DirectFET Power MOSFET V(BR)DSS 40V Advanced Process Technology Optimized for Automotive Motor Drive, DC-DC and RDS(on) typ. 1.2m other Heavy Load Applications max. 1.6m Exceptionally Small Footprint and Low Profile High Power Density ID (Silicon Limited) 184A Low Parasitic Parame
auirf7736m2tr1.pdf
PD - 96316B AUIRF7736M2TR AUTOMOTIVE GRADE AUIRF7736M2TR1 Automotive DirectFET Power MOSFET Advanced Process Technology V(BR)DSS 40V Optimized for Automotive Motor Drive, DC-DC and RDS(on) typ. 2.5m other Heavy Load Applications Exceptionally Small Footprint and Low Profile max. 3.0m High Power Density ID (Silicon Limited) 108A Low Parasitic Param
Otros transistores... AUIRF7478Q, AUIRF7640S2, AUIRF7647S2TR, AUIRF7648M2TR, AUIRF7665S2, AUIRF7669L2TR, AUIRF7675M2, AUIRF7736M2TR, IRF520, AUIRF7738L2, AUIRF7739L2, AUIRF7805Q, AUIRF9540N, AUIRF9Z34N, AUIRFB3004, AUIRFB3006, AUIRFB3077
History: IPB26CN10N | IPB60R380P6
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