Справочник MOSFET. AUIRF7737L2TR

 

AUIRF7737L2TR MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: AUIRF7737L2TR
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 3.3 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 31 A
   Tjⓘ - Максимальная температура канала: 175 °C
   trⓘ - Время нарастания: 19 ns
   Cossⓘ - Выходная емкость: 1193 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0019 Ohm
   Тип корпуса: DIRECTFET

 Аналог (замена) для AUIRF7737L2TR

 

 

AUIRF7737L2TR Datasheet (PDF)

 ..1. Size:292K  infineon
auirf7737l2tr auirf7737l2tr1.pdf

AUIRF7737L2TR
AUIRF7737L2TR

PD - 96315CAUIRF7737L2TRAUTOMOTIVE GRADEAUIRF7737L2TR1 Automotive DirectFET Power MOSFET Advanced Process TechnologyV(BR)DSS40V Optimized for Automotive Motor Drive, DC-DC andRDS(on) typ.1.5mother Heavy Load Applications Exceptionally Small Footprint and Low Profilemax. 1.9m High Power DensityID (Silicon Limited)156A Low Parasitic Par

 0.1. Size:290K  international rectifier
auirf7737l2tr1.pdf

AUIRF7737L2TR
AUIRF7737L2TR

PD - 96315CAUIRF7737L2TRAUTOMOTIVE GRADEAUIRF7737L2TR1 Automotive DirectFET Power MOSFET Advanced Process TechnologyV(BR)DSS40V Optimized for Automotive Motor Drive, DC-DC andRDS(on) typ.1.5mother Heavy Load Applications Exceptionally Small Footprint and Low Profilemax. 1.9m High Power DensityID (Silicon Limited)156A Low Parasitic Par

 6.1. Size:291K  international rectifier
auirf7738l2tr.pdf

AUIRF7737L2TR
AUIRF7737L2TR

PD - 96333AAUIRF7738L2TRAUTOMOTIVE GRADEAUIRF7738L2TR1 Automotive DirectFET Power MOSFET V(BR)DSS 40V Advanced Process Technology Optimized for Automotive Motor Drive, DC-DC and RDS(on) typ.1.2mother Heavy Load Applicationsmax. 1.6m Exceptionally Small Footprint and Low Profile High Power Density ID (Silicon Limited)184A Low Parasitic Parame

 6.2. Size:291K  international rectifier
auirf7736m2tr1.pdf

AUIRF7737L2TR
AUIRF7737L2TR

PD - 96316BAUIRF7736M2TRAUTOMOTIVE GRADEAUIRF7736M2TR1 Automotive DirectFET Power MOSFET Advanced Process Technology V(BR)DSS40V Optimized for Automotive Motor Drive, DC-DC andRDS(on) typ.2.5mother Heavy Load Applications Exceptionally Small Footprint and Low Profile max. 3.0m High Power DensityID (Silicon Limited)108A Low Parasitic Param

 6.3. Size:246K  international rectifier
auirf7732s2tr.pdf

AUIRF7737L2TR
AUIRF7737L2TR

AUIRF7732S2PbFAUIRF7732S2TR/TR1DirectFET Power MOSFET Advanced Process Technology Optimized for Automotive DC-DC, Motor Drive and40VV(BR)DSS other Heavy Load Applications5.5mRDS(on) typ. Exceptionally Small Footprint and Low Profile High Power Density max. 6.95m Low Parasitic Parameters55AID (Silicon Limited) Dual Sided Cooling30nCQg

 6.4. Size:308K  international rectifier
auirf7739l2tr.pdf

AUIRF7737L2TR
AUIRF7737L2TR

PD - 97442BAUIRF7739L2TRAUTOMOTIVE GRADEAUIRF7739L2TR1Automotive DirectFET Power MOSFET FeaturesAdvanced Process Technology V(BR)DSS40VOptimized for Automotive Motor Drive, DC-DC andRDS(on) typ.700 other Heavy Load Applicationsmax. 1000Exceptionally Small Footprint and Low ProfileHigh Power DensityID (Silicon Limit

 6.5. Size:439K  infineon
auirf7738l2tr.pdf

AUIRF7737L2TR
AUIRF7737L2TR

AUTOMOTIVE GRADE AUIRF7738L2TR Automotive DirectFET Power MOSFET Advanced Process Technology V(BR)DSS 40V Optimized for Automotive Motor Drive, DC-DC and other Heavy Load Applications RDS(on) typ. 1.2m Exceptionally Small Footprint and Low Profile max. 1.6m High Power Density ID (Silicon Limited) 184A Low Parasitic Parameters Qg (typi

 6.6. Size:432K  infineon
auirf7734m2 auirf7734m2tr.pdf

AUIRF7737L2TR
AUIRF7737L2TR

AUTOMOTIVE GRADE AUIRF7734M2TR Automotive DirectFET Power MOSFET Advanced Process Technology V(BR)DSS 40V Optimized for Automotive Motor Drive, DC-DC and other Heavy Load Applications RDS(on) typ. 3.8m Exceptionally Small Footprint and Low Profile max. 4.9m High Power Density ID (Silicon Limited) 72A Low Parasitic Parameters Qg (typic

 6.7. Size:429K  infineon
auirf7732s2tr.pdf

AUIRF7737L2TR
AUIRF7737L2TR

AUTOMOTIVE GRADE AUIRF7732S2TR Automotive DirectFET Power MOSFET Advanced Process Technology V(BR)DSS 40V Optimized for Automotive Motor Drive, DC-DC and other Heavy Load Applications RDS(on) typ. 5.5m Exceptionally Small Footprint and Low Profile max. 6.95m High Power Density ID (Silicon Limited) 55A Low Parasitic Parameters Qg (ty

 6.8. Size:439K  infineon
auirf7736m2tr.pdf

AUIRF7737L2TR
AUIRF7737L2TR

AUTOMOTIVE GRADE AUIRF7736M2TR Automotive DirectFET Power MOSFET Advanced Process Technology V(BR)DSS 40V Optimized for Automotive Motor Drive, DC-DC and other Heavy Load Applications RDS(on) typ. 2.5m Exceptionally Small Footprint and Low Profile max. 3.0m High Power Density ID (Silicon Limited) 108A Low Parasitic Parameters Qg (typi

 6.9. Size:534K  infineon
auirf7739l2tr.pdf

AUIRF7737L2TR
AUIRF7737L2TR

AUTOMOTIVE GRADE AUIRF7739L2TR Automotive DirectFET Power MOSFET Advanced Process Technology V(BR)DSS 40V Optimized for Automotive Motor Drive, DC-DC and other Heavy Load Applications RDS(on) typ. 700 Exceptionally Small Footprint and Low Profile max. 1000 High Power Density ID (Silicon Limited) 270A Low Parasitic Parameters Qg (t

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