AUIRFR3504Z MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: AUIRFR3504Z
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 90 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 77 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 30 nC
   trⓘ - Tiempo de subida: 74 nS
   Cossⓘ - Capacitancia de salida: 340 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.009 Ohm
   Paquete / Cubierta: DPAK

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AUIRFR3504Z Datasheet (PDF)

..1. Size:664K infineon
auirfr3504z.pdf

AUTOMOTIVE GRADE AUIRFR3504Z Features HEXFET Power MOSFET Advanced Process Technology Low On-Resistance VDSS 40V 175C Operating Temperature RDS(on) max. 9.0m Fast Switching Repetitive Avalanche Allowed up to Tjmax ID (Silicon Limited) 77A Lead-Free, RoHS Compliant Automotive Qualified * ID (Package Limited) 42A D Description

0.1. Size:268K international rectifier
auirfr3504ztr.pdf

PD - 97492AUIRFR3504ZAUTOMOTIVE GRADEHEXFET Power MOSFETFeatures Advanced Process TechnologyDV(BR)DSS 40V Low On-Resistance 175C Operating TemperatureRDS(on) max.9.0m Fast SwitchingGID (Silicon Limited) 77A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS CompliantID (Package Limited)42AS Automotive Qualified *DescriptionDSpecifical

4.1. Size:228K international rectifier
auirfr3504.pdf

PD - 97687AAUTOMOTIVE GRADEAUIRFR3504FeaturesHEXFET Power MOSFETl Advanced Planar Technologyl Low On-ResistanceDV(BR)DSS40Vl 175C Operating TemperatureRDS(on) typ.l Fast Switching 7.8ml Fully Avalanche Ratedmax 9.2mGl Repetitive Avalanche AllowedID (Silicon Limited)87Aup to TjmaxSID (Package Limited)l Lead-Free, RoHS Compliant 56Al Automotiv

7.1. Size:272K international rectifier
auirfr3710ztrl.pdf

PD - 97451AUTOMOTIVE GRADEAUIRFR3710ZHEXFET Power MOSFETFeaturesDl Advanced Process Technology V(BR)DSS100Vl Ultra Low On-ResistanceRDS(on) max.18ml 175C Operating TemperatureGl Fast SwitchingID (Silicon Limited)56Al Repetitive Avalanche Allowed up to TjmaxSID (Package Limited)42Al Lead-Free, RoHS Compliantl Automotive Qualified *Description

7.2. Size:485K infineon
auirfr3607 auirfu3607.pdf

AUTOMOTIVE GRADEAUIRFR3607AUIRFU3607FeaturesAdvanced Process TechnologyHEXFET Power MOSFETUltra Low On-ResistanceD175C Operating TemperatureVDSS 75VFast SwitchingRDS(on) typ. 7.34mRepetitive Avalanche Allowed up to TjmaxLead-Free, RoHS Compliant max. 9.0mAutomotive Qualified *GID (Silicon Limited) 80AS ID (Package Limited) 56ADescriptionSpecifically des

7.3. Size:698K infineon
auirfr3806.pdf

AUTOMOTIVE GRADE AUIRFR3806 Features HEXFET Power MOSFET Advanced Process Technology VDSS 60V Ultra Low On-Resistance RDS(on) typ. 12.6m Dynamic dV/dT Rating max. 15.8m 175C Operating Temperature ID 43A Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * D Desc

7.4. Size:278K infineon
auirfr3710z.pdf

Otros transistores... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , RFP50N06 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

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