AUIRFR48Z MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AUIRFR48Z

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 91 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 55 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 62 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 61 nS

Cossⓘ - Capacitancia de salida: 290 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.011 Ohm

Encapsulados: DPAK

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AUIRFR48Z datasheet

 ..1. Size:678K  infineon
 auirfr48z.pdf pdf_icon

AUIRFR48Z

AUTOMOTIVE GRADE AUIRFR48Z Features HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance VDSS 55V 175 C Operating Temperature RDS(on) max. 11m Fast Switching Repetitive Avalanche Allowed up to Tjmax ID (Silicon Limited) 62A Lead-Free, RoHS Compliant Automotive Qualified * ID (Package Limited) 42A D Descript

 0.1. Size:292K  international rectifier
 auirfr48ztr.pdf pdf_icon

AUIRFR48Z

PD - 97586 AUTOMOTIVE GRADE AUIRFR48Z HEXFET Power MOSFET Features Advanced Process Technology D V(BR)DSS 55V Ultra Low On-Resistance RDS(on) max. 11m 175 C Operating Temperature Fast Switching G ID (Silicon Limited) 62A Repetitive Avalanche Allowed up to Tjmax S ID (Package Limited) 42A Lead-Free, RoHS Compliant Automotive Qualified * Des

 7.1. Size:317K  international rectifier
 auirfr4104tr.pdf pdf_icon

AUIRFR48Z

PD - 97452A AUIRFR4104 AUTOMOTIVE GRADE AUIRFU4104 HEXFET Power MOSFET Features Advanced Process Technology D Ultra Low On-Resistance V(BR)DSS 40V 175 C Operating Temperature RDS(on) max. 5.5m Fast Switching G Repetitive Avalanche Allowed up to Tjmax ID (Silicon Limited) 119A Lead-Free, RoHS Compliant S ID (Package Limited) 42A Automotive Q

 7.2. Size:281K  international rectifier
 auirfr4292 auirfu4292.pdf pdf_icon

AUIRFR48Z

AUIRFR4292 AUTOMOTIVE GRADE AUIRFU4292 Features HEXFET Power MOSFET Advanced Process Technology D V(BR)DSS 250V Low On-Resistance RDS(on) typ. 275m 175 C Operating Temperature G Fast Switching max. 345m Repetitive Avalanche Allowed up to Tjmax S ID 9.3A Lead-Free, RoHS Compliant Automotive Qualified * D Description Specifically designed for Automotive applicatio

MOSTRAR MÁS

Otros transistores... AUIRFR3607, AUIRFR3710Z, AUIRFR3806, AUIRFR4104, AUIRFR4105, AUIRFR4105Z, AUIRFR4615, AUIRFR4620, SPP20N60C3, AUIRFR5305, AUIRFR5410, AUIRFR5505, AUIRFR6215, AUIRFR9024N, AUIRFS3004, AUIRFS3004-7P, AUIRFS3006