Справочник MOSFET. AUIRFR48Z

 

AUIRFR48Z MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: AUIRFR48Z
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 91 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 55 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 62 A
   Tjⓘ - Максимальная температура канала: 175 °C
   trⓘ - Время нарастания: 61 ns
   Cossⓘ - Выходная емкость: 290 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.011 Ohm
   Тип корпуса: DPAK

 Аналог (замена) для AUIRFR48Z

 

 

AUIRFR48Z Datasheet (PDF)

 ..1. Size:678K  infineon
auirfr48z.pdf

AUIRFR48Z
AUIRFR48Z

AUTOMOTIVE GRADE AUIRFR48Z Features HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance VDSS 55V 175C Operating Temperature RDS(on) max. 11m Fast Switching Repetitive Avalanche Allowed up to Tjmax ID (Silicon Limited) 62A Lead-Free, RoHS Compliant Automotive Qualified * ID (Package Limited) 42A D Descript

 0.1. Size:292K  international rectifier
auirfr48ztr.pdf

AUIRFR48Z
AUIRFR48Z

PD - 97586AUTOMOTIVE GRADEAUIRFR48ZHEXFET Power MOSFETFeatures Advanced Process TechnologyDV(BR)DSS 55V Ultra Low On-ResistanceRDS(on) max.11m 175C Operating Temperature Fast Switching GID (Silicon Limited)62A Repetitive Avalanche Allowed up to TjmaxSID (Package Limited) 42A Lead-Free, RoHS Compliant Automotive Qualified *Des

 7.1. Size:317K  international rectifier
auirfr4104tr.pdf

AUIRFR48Z
AUIRFR48Z

PD - 97452AAUIRFR4104AUTOMOTIVE GRADEAUIRFU4104HEXFET Power MOSFETFeatures Advanced Process TechnologyD Ultra Low On-ResistanceV(BR)DSS 40V 175C Operating TemperatureRDS(on) max.5.5m Fast SwitchingG Repetitive Avalanche Allowed up to TjmaxID (Silicon Limited)119A Lead-Free, RoHS CompliantSID (Package Limited) 42A Automotive Q

 7.2. Size:281K  international rectifier
auirfr4292 auirfu4292.pdf

AUIRFR48Z
AUIRFR48Z

AUIRFR4292AUTOMOTIVE GRADEAUIRFU4292FeaturesHEXFET Power MOSFET Advanced Process TechnologyDV(BR)DSS 250V Low On-ResistanceRDS(on) typ. 275m 175C Operating TemperatureG Fast Switching max. 345m Repetitive Avalanche Allowed up to Tjmax SID 9.3A Lead-Free, RoHS Compliant Automotive Qualified *DDescriptionSpecifically designed for Automotive applicatio

 7.3. Size:317K  international rectifier
auirfr4105ztr.pdf

AUIRFR48Z
AUIRFR48Z

PD - 97544AUTOMOTIVE GRADE AUIRFR4105ZAUIRFU4105ZHEXFET Power MOSFETFeaturesD Advanced Process TechnologyV(BR)DSS55V Ultra Low On-Resistance 175C Operating TemperatureRDS(on) max.24.5mG Fast Switching Repetitive Avalanche Allowed up to Tjmax IDS 30A Lead-Free, RoHS Compliant Automotive Qualified *DescriptionDSpecifically de

 7.4. Size:238K  international rectifier
auirfr4105tr.pdf

AUIRFR48Z
AUIRFR48Z

PD - 97597AAUTOMOTIVE GRADEAUIRFR4105HEXFET Power MOSFETFeaturesDV(BR)DSS55V Advanced Planar Technology Low On-ResistanceRDS(on) max.45m Dynamic dV/dT RatingGID (Silicon Limited)27A 175C Operating Temperature Fast SwitchingID (Package Limited)20AS Fully Avalanche Rated Repetitive Avalanche Allowedup toTjmax Lead-Free,

 7.5. Size:719K  infineon
auirfr4292 auirfu4292.pdf

AUIRFR48Z
AUIRFR48Z

AUIRFR4292 AUTOMOTIVE GRADE AUIRFU4292 Features VDSS 250V Advanced Process Technology RDS(on) typ. 275m Low On-Resistance max. 175C Operating Temperature 345m Fast Switching ID 9.3A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant D Automotive Qualified * D S S Description D G G Specifical

 7.6. Size:289K  infineon
auirfr4615 auirfu4615.pdf

AUIRFR48Z
AUIRFR48Z

PD -96398AAUTOMOTIVE GRADEAUIRFR4615AUIRFU4615FeaturesHEXFET Power MOSFETl Advanced Process TechnologyDl Low On-ResistanceVDSS150Vl 175C Operating Temperaturel Fast Switching RDS(on) typ.34ml Repetitive Avalanche Allowed up to TjmaxG max. 42ml Lead-Free, RoHS Compliantl Automotive Qualified *ID 33ASDescriptionDDSpecifically designed for Automo

 7.7. Size:626K  infineon
auirfr4620.pdf

AUIRFR48Z
AUIRFR48Z

AUTOMOTIVE GRADE AUIRFR4620 Features HEXFET Power MOSFET Advanced Process Technology VDSS 200V Ultra Low On-Resistance RDS(on) typ. 64m Dynamic dV/dT Rating max. 78m 175C Operating Temperature ID 24A Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * D Descrip

 7.8. Size:715K  infineon
auirfr4104 auirfu4104.pdf

AUIRFR48Z
AUIRFR48Z

AUIRFR4104 AUTOMOTIVE GRADE AUIRFU4104 Features HEXFET Power MOSFET Advanced Process Technology Low On-Resistance VDSS 40V 175C Operating Temperature RDS(on) max. 5.5m Fast Switching Repetitive Avalanche Allowed up to Tjmax ID (Silicon Limited) 119A Lead-Free, RoHS Compliant Automotive Qualified * ID (Package Limited) 42A D

 7.9. Size:720K  infineon
auirfr4105z auirfu4105z.pdf

AUIRFR48Z
AUIRFR48Z

AUIRFR4105Z AUTOMOTIVE GRADE AUIRFU4105Z Features HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance VDSS 55V 175C Operating Temperature Fast Switching RDS(on) max. 24.5m Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant ID 30A Automotive Qualified * D D Description Specifically designed

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