AUIRFS4127 Todos los transistores

 

AUIRFS4127 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AUIRFS4127
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 375 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 200 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 72 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 18 nS
   Cossⓘ - Capacitancia de salida: 410 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.022 Ohm
   Paquete / Cubierta: TO263
     - Selección de transistores por parámetros

 

AUIRFS4127 Datasheet (PDF)

 ..1. Size:446K  infineon
auirfs4127.pdf pdf_icon

AUIRFS4127

AUIRFS4127 AUTOMOTIVE GRADE Features HEXFET Power MOSFET Advanced Process Technology D VDSS 200V Ultra Low On-Resistance 175C Operating Temperature RDS(on) typ. 18.6mFast Switching G Repetitive Avalanche Allowed up to Tjmax max 22m Lead-Free, RoHS Compliant SID 72A Automotive Qualified * Description D Speci

 6.1. Size:680K  infineon
auirfs4115-7p.pdf pdf_icon

AUIRFS4127

AUIRFS4115-7P AUTOMOTIVE GRADE HEXFET Power MOSFET Features Advanced Process Technology VDSS 150V Ultra Low On-Resistance RDS(on) typ. 10m Dynamic dV/dT Rating max. 11.8m 175C Operating Temperature ID 105A Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * Descrip

 6.2. Size:722K  infineon
auirfs4115 auirfsl4115.pdf pdf_icon

AUIRFS4127

AUIRFS4115 AUTOMOTIVE GRADE AUIRFSL4115 HEXFET Power MOSFET VDSS 150V Features Advanced Process Technology RDS(on) typ. 10.3m Ultra Low On-Resistance max. 12.1m 175C Operating Temperature Fast Switching ID 99A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant D D Automotive Qualified * Description S S

 7.1. Size:340K  international rectifier
auirfs4610trl.pdf pdf_icon

AUIRFS4127

PD - 96325AUTOMOTIVE GRADEAUIRFB4610AUIRFS4610Features HEXFET Power MOSFET Advanced Process TechnologyD Ultra Low On-ResistanceV(BR)DSS100V Enhanced dV/dT and dI/dT capabilityRDS(on) typ.11m 175C Operating Temperature Fast Switching max. 14mG Repetitive Avalanche Allowed up to TjmaxID73A Lead-Free, RoHS Compliant S Automotive Qualified *DDescripti

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: STP33N65M2 | STP55N06L | RFL1N10L

 

 
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