AUIRFZ44VZS MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AUIRFZ44VZS

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 92 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 57 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 62 nS

Cossⓘ - Capacitancia de salida: 270 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.012 Ohm

Encapsulados: TO263

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AUIRFZ44VZS datasheet

 ..1. Size:654K  infineon
 auirfz44vzs.pdf pdf_icon

AUIRFZ44VZS

AUTOMOTIVE GRADE AUIRFZ44VZS HEXFET Power MOSFET Features Advanced Process Technology VDSS 60V Ultra Low On-Resistance RDS(on) typ. 9.6m 175 C Operating Temperature Fast Switching max. 12m Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant ID 57A Automotive Qualified * D Description S Specifically designed

 0.1. Size:274K  international rectifier
 auirfz44vzstrl.pdf pdf_icon

AUIRFZ44VZS

PD - 96354 AUTOMOTIVE GRADE AUIRFZ44VZS HEXFET Power MOSFET Features l Advanced Process Technology D V(BR)DSS 60V l Ultra Low On-Resistance RDS(on) typ. 9.6m l 175 C Operating Temperature l Fast Switching G max. 12m l Repetitive Avalanche Allowed up to Tjmax S l Lead-Free, RoHS Compliant ID 57A l Automotive Qualified * Description D Specifically designed for Automo

 5.1. Size:580K  international rectifier
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AUIRFZ44VZS

PD - 96415 AUTOMOTIVE GRADE AUIRFZ44V HEXFET Power MOSFET Features D V(BR)DSS l Advanced Planar Technology 60V l Low On-Resistance l Dynamic dV/dT Rating RDS(on) max. 16.5m l 175 C Operating Temperature G l Fast Switching ID 55A l Fully Avalanche Rated S l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant D l Automotive Qualified * Description S D

 6.1. Size:327K  international rectifier
 auirfz44zstrl.pdf pdf_icon

AUIRFZ44VZS

PD - 97543 AUIRFZ44Z AUTOMOTIVE GRADE AUIRFZ44ZS Features Advanced Process Technology HEXFET Power MOSFET Ultra Low On-Resistance 175 C Operating Temperature D V(BR)DSS 55V Fast Switching Repetitive Avalanche Allowed up to RDS(on) max. 13.9m Tjmax G Lead-Free, RoHS Compliant ID 51A S Automotive Qualified * D Description D Specifically

MOSTRAR MÁS

Otros transistores... AUIRFU9024N, AUIRFZ24NL, AUIRFZ24NS, AUIRFZ34N, AUIRFZ44N, AUIRFZ44NL, AUIRFZ44NS, AUIRFZ44V, 60N06, AUIRFZ44Z, AUIRFZ44ZS, AUIRFZ46NL, AUIRFZ48N, AUIRFZ48Z, AUIRFZ48ZS, AUIRL1404L, AUIRL1404S