All MOSFET. AUIRFZ44VZS Datasheet

 

AUIRFZ44VZS Datasheet and Replacement


   Type Designator: AUIRFZ44VZS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 92 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 57 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 43 nC
   tr ⓘ - Rise Time: 62 nS
   Cossⓘ - Output Capacitance: 270 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
   Package: TO263
 

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AUIRFZ44VZS Datasheet (PDF)

 ..1. Size:654K  infineon
auirfz44vzs.pdf pdf_icon

AUIRFZ44VZS

AUTOMOTIVE GRADE AUIRFZ44VZS HEXFET Power MOSFET Features Advanced Process Technology VDSS 60V Ultra Low On-Resistance RDS(on) typ. 9.6m 175C Operating Temperature Fast Switching max. 12m Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant ID 57A Automotive Qualified * D Description S Specifically designed

 0.1. Size:274K  international rectifier
auirfz44vzstrl.pdf pdf_icon

AUIRFZ44VZS

PD - 96354AUTOMOTIVE GRADEAUIRFZ44VZSHEXFET Power MOSFETFeaturesl Advanced Process Technology DV(BR)DSS60Vl Ultra Low On-ResistanceRDS(on) typ.9.6ml 175C Operating Temperaturel Fast Switching Gmax. 12ml Repetitive Avalanche Allowed up to TjmaxSl Lead-Free, RoHS Compliant ID 57A l Automotive Qualified *DescriptionDSpecifically designed for Automo

 5.1. Size:580K  international rectifier
auirfz44v.pdf pdf_icon

AUIRFZ44VZS

PD - 96415AUTOMOTIVE GRADEAUIRFZ44VHEXFET Power MOSFETFeaturesDV(BR)DSSl Advanced Planar Technology 60Vl Low On-Resistancel Dynamic dV/dT RatingRDS(on) max.16.5ml 175C Operating TemperatureGl Fast SwitchingID 55Al Fully Avalanche RatedSl Repetitive Avalanche Allowed up to Tjmaxl Lead-Free, RoHS CompliantDl Automotive Qualified *DescriptionSD

 6.1. Size:327K  international rectifier
auirfz44zstrl.pdf pdf_icon

AUIRFZ44VZS

PD - 97543AUIRFZ44ZAUTOMOTIVE GRADEAUIRFZ44ZSFeatures Advanced Process Technology HEXFET Power MOSFET Ultra Low On-Resistance 175C Operating Temperature DV(BR)DSS55V Fast Switching Repetitive Avalanche Allowed up toRDS(on) max.13.9mTjmaxG Lead-Free, RoHS CompliantID51AS Automotive Qualified *DDescriptionDSpecifically

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

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