BS170 Todos los transistores

 

BS170 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BS170

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 0.83 W

Tensión drenaje-fuente |Vds|: 60 V

Tensión compuerta-fuente |Vgs|: 20 V

Corriente continua de drenaje |Id|: 0.5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente |Vgs(th)|: 3 V

Resistencia drenaje-fuente RDS(on): 5 Ohm

Empaquetado / Estuche: TO92

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BS170 Datasheet (PDF)

..1. bs170 cnv 2.pdf Size:49K _philips

BS170 BS170

DISCRETE SEMICONDUCTORSDATA SHEETBS170N-channel vertical D-MOStransistorApril 1995Product specificationFile under Discrete Semiconductors, SC13bPhilips Semiconductors Product specificationN-channel vertical D-MOS transistor BS170DESCRIPTION QUICK REFERENCE DATAN-channel enhancement modeDrain-source voltage VDS max. 60 Vvertical D-MOS transistor in TO-92Gate-source v

..2. bs170.pdf Size:652K _fairchild_semi

BS170 BS170

April 1995 BS170 / MMBF170N-Channel Enhancement Mode Field Effect Transistor General Description FeaturesThese N-Channel enhancement mode field effect High density cell design for low RDS(ON).transistors are produced using Fairchild's proprietary, highVoltage controlled small signal switch.cell density, DMOS technology. These products have beendesigned to minimize on-state resi

..3. bs170 d26z bs170 d27z bs170 d74z bs170 d75z bs170 l34z bs170 mmbf170.pdf Size:1298K _fairchild_semi

BS170 BS170

March 2010BS170 / MMBF170N-Channel Enhancement Mode Field Effect Transistor General Description FeaturesThese N-Channel enhancement mode field effect High density cell design for low RDS(ON).transistors are produced using Fairchild's proprietary, high Voltage controlled small signal switch.cell density, DMOS technology. These products have beendesigned to minimize on-s

..4. 2n7000 2n7002 vq1000j-p bs170.pdf Size:58K _vishay

BS170 BS170

2N7000/2N7002, VQ1000J/P, BS170Vishay SiliconixN-Channel 60-V (D-S) MOSFETPRODUCT SUMMARYPart Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A)5 @ VGS = 10 V 0.8 to 3 0.22N70002N7002 7.5 @ VGS = 10 V 1 to 2.5 0.11560VQ1000J 5.5 @ VGS = 10 V 0.8 to 2.5 0.225VQ1000P 5.5 @ VGS = 10 V 0.8 to 2.5 0.225BS170 5 @ VGS = 10 V 0.8 to 3 0.5FEATURES BENEFITS APPLICATIONSD

..5. 2n7000 2n7002 vq1000j vq1000p bs170.pdf Size:58K _vishay

BS170 BS170

2N7000/2N7002, VQ1000J/P, BS170Vishay SiliconixN-Channel 60-V (D-S) MOSFETPRODUCT SUMMARYPart Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A)5 @ VGS = 10 V 0.8 to 3 0.22N70002N7002 7.5 @ VGS = 10 V 1 to 2.5 0.11560VQ1000J 5.5 @ VGS = 10 V 0.8 to 2.5 0.225VQ1000P 5.5 @ VGS = 10 V 0.8 to 2.5 0.225BS170 5 @ VGS = 10 V 0.8 to 3 0.5FEATURES BENEFITS APPLICATIONSD

..6. bs170.pdf Size:61K _onsemi

BS170 BS170

BS170Small Signal MOSFET500 mA, 60 VoltsN-Channel TO-92 (TO-226)Featureswww.onsemi.com This is a Pb-Free Device*500 mA, 60 VoltsMAXIMUM RATINGSRating Symbol Value Unit RDS(on) = 5.0 WDrain-Source Voltage VDS 60 VdcN-ChannelGate-Source Voltage- Continuous VGS 20 Vdc D- Non-repetitive (tp 50 ms) VGSM 40 VpkDrain Current (Note) ID 0.5 AdcTotal Device Di

..7. bs170 mmbf170.pdf Size:3674K _onsemi

BS170 BS170

0.1. bs170rev1x.pdf Size:77K _motorola

BS170 BS170

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BS170/DTMOS FET SwitchingN Channel EnhancementBS1701 DRAIN2GATE3 SOURCEMAXIMUM RATINGS12Rating Symbol Value

0.2. 2n7000kl bs170kl.pdf Size:93K _vishay

BS170 BS170

2N7000KL/BS170KLVishay SiliconixN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) rDS(on) () VGS(th) (V) ID (A)Pb-free ESD Protected: 2000 VAvailable2 at VGS = 10 V0.4760 1.0 to 2.5 RoHS*APPLICATIONSCOMPLIANT4 at VGS = 4.5 V0.33 Direct Logic-Level Interface: TTL/CMOS Solid-State Relays Drivers: Relays,

 

 

 0.3. bs170f.pdf Size:20K _diodes

BS170

SOT23 N-CHANNEL ENHANCEMENTBS170FMODE VERTICAL DMOS FETISSUE 3 - JANUARY 1996FEATURES* 60Volt VDSS* RDS(ON) = 5DGPARTMARKING DETAIL MVSOT23ABSOLUTE MAXIMUM RATINGS.PARAMETER SYMBOL VALUE UNITDrain-Source Voltage VDS 60 VContinuous Drain Current at Tamb=25C ID 0.15 mAPulsed Drain Current IDM 3AGate Source Voltage VGS 20 VPower Dissipation at Tamb=2

0.4. bs170g bs170rl1g bs170rlra bs170rlrag bs170rlrmg bs170rlrp bs170rlrpg bs170zl1g.pdf Size:88K _onsemi

BS170 BS170

BS170GSmall Signal MOSFET500 mA, 60 VoltsN-Channel TO-92 (TO-226)Featureshttp://onsemi.com This is a Pb-Free Device*500 mA, 60 VoltsMAXIMUM RATINGSRDS(on) = 5.0 WRating Symbol Value UnitDrain -Source Voltage VDS 60 VdcN-ChannelGate-Source VoltageD- Continuous VGS 20 Vdc- Non-repetitive (tp 50 ms) VGSM 40 VpkDrain Current (Note) ID 0.5 AdcGTotal

 0.5. bs170g.pdf Size:92K _onsemi

BS170 BS170

BS170GSmall Signal MOSFET500 mA, 60 VoltsN-Channel TO-92 (TO-226)Featureshttp://onsemi.com This is a Pb-Free Device*500 mA, 60 VoltsMAXIMUM RATINGSRDS(on) = 5.0 WRating Symbol Value UnitDrain -Source Voltage VDS 60 VdcN-ChannelGate-Source VoltageD- Continuous VGS 20 Vdc- Non-repetitive (tp 50 ms) VGSM 40 VpkDrain Current (Note) ID 0.5 AdcGTotal

0.6. bs170p.pdf Size:15K _no

BS170

N-CHANNEL ENHANCEMENTBS170PMODE VERTICAL DMOS FETISSUE 2 SEPT 93FEATURES* 60 Volt VDS* RDS(on)=5D G SREFER TO ZVN3306A FOR GRAPHSE-LineTO92 CompatibleABSOLUTE MAXIMUM RATINGS.PARAMETER SYMBOL VALUE UNITDrain-Source Voltage VDS 60 VContinuous Drain Current at Tamb =25C ID 270 mAPulsed Drain Current IDM 3AGate-Source Voltage VGS 20 VPower Dissipati

0.7. bs170f.pdf Size:67K _no

BS170

ST3-ANLNACMNO2NCHNEEHNEETB10S7FM EETADOFTODVRILMSECIU3JNAY96SSE-AUR19FAUEETRS*6VlVS0otDS*RSN=5D(O)DGPRMRI DTIVATAKGEAN LMST3O2ASLTMX AIBOUE AIU NSMMRTG.PRMTR SMO VLE UIAAEE YBL AU NTDa-or Vlg VS 6 Vrn eoae 0iSuc tDCnnosrnurttab2 I 05 motuu Da CrnaTm=5 . Ai i e C 1DPldriCrn I 3 Aue Da es nurtDMGtS

0.8. hbs170.pdf Size:403K _shantou-huashan

BS170 BS170

Shantou Huashan Electronic Devices Co.,Ltd. HBS170 N-Channel Enhancement Mode Field Effect Transistor General Description These products have been designed to minimize on-state resistance TO-92 While provide rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 500mA DC. These products are particularly suited for low voltage,

0.9. bs170fta bs170ftc.pdf Size:17K _zetex

BS170

SOT23 N-CHANNEL ENHANCEMENTBS170FMODE VERTICAL DMOS FETISSUE 3 - JANUARY 1996FEATURES* 60Volt VDSS* RDS(ON) = 5DGPARTMARKING DETAIL MVSOT23ABSOLUTE MAXIMUM RATINGS.PARAMETER SYMBOL VALUE UNITDrain-Source Voltage VDS 60 VContinuous Drain Current at Tamb=25C ID 0.15 mAPulsed Drain Current IDM 3AGate Source Voltage VGS 20 VPower Dissipation at Tamb=2

0.10. bs170pstoa bs170pstob bs170pstz.pdf Size:15K _zetex

BS170

N-CHANNEL ENHANCEMENTBS170PMODE VERTICAL DMOS FETISSUE 2 SEPT 93FEATURES* 60 Volt VDS* RDS(on)=5D G SREFER TO ZVN3306A FOR GRAPHSE-LineTO92 CompatibleABSOLUTE MAXIMUM RATINGS.PARAMETER SYMBOL VALUE UNITDrain-Source Voltage VDS 60 VContinuous Drain Current at Tamb =25C ID 270 mAPulsed Drain Current IDM 3AGate-Source Voltage VGS 20 VPower Dissipati

Otros transistores... BFR30 , BFR31 , BFR84 , BFS28R , BFT46 , BS107P , BS107PT , BS108 , IRFB4115 , BS170F , BS170P , BS250F , BS250P , BS270 , BSN254 , BSN254A , BSP92 .

 

 
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