BS170 - описание и поиск аналогов

DISCRETE SEMICONDUCTORS DATA SHEET BS170 N-channel vertical D-MOS transistor April 1995 Product specification File under Discrete Semiconductors, SC13b Philips Semiconductors Product specification N-channel vertical D-MOS transistor BS170 DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode Drain-source voltage VDS max. 60 V vertical D-MOS transistor in TO-92 Gate-source v

April 1995 BS170 / MMBF170 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode field effect High density cell design for low RDS(ON). transistors are produced using Fairchild's proprietary, high Voltage controlled small signal switch. cell density, DMOS technology. These products have been designed to minimize on-state resi

March 2010 BS170 / MMBF170 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode field effect High density cell design for low RDS(ON). transistors are produced using Fairchild's proprietary, high Voltage controlled small signal switch. cell density, DMOS technology. These products have been designed to minimize on-s

2N7000/2N7002, VQ1000J/P, BS170 Vishay Siliconix N-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 5 @ VGS = 10 V 0.8 to 3 0.2 2N7000 2N7002 7.5 @ VGS = 10 V 1 to 2.5 0.115 60 VQ1000J 5.5 @ VGS = 10 V 0.8 to 2.5 0.225 VQ1000P 5.5 @ VGS = 10 V 0.8 to 2.5 0.225 BS170 5 @ VGS = 10 V 0.8 to 3 0.5 FEATURES BENEFITS APPLICATIONS D

2N7000/2N7002, VQ1000J/P, BS170 Vishay Siliconix N-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 5 @ VGS = 10 V 0.8 to 3 0.2 2N7000 2N7002 7.5 @ VGS = 10 V 1 to 2.5 0.115 60 VQ1000J 5.5 @ VGS = 10 V 0.8 to 2.5 0.225 VQ1000P 5.5 @ VGS = 10 V 0.8 to 2.5 0.225 BS170 5 @ VGS = 10 V 0.8 to 3 0.5 FEATURES BENEFITS APPLICATIONS D

BS170 Small Signal MOSFET 500 mA, 60 Volts N-Channel TO-92 (TO-226) Features www.onsemi.com This is a Pb-Free Device* 500 mA, 60 Volts MAXIMUM RATINGS Rating Symbol Value Unit RDS(on) = 5.0 W Drain-Source Voltage VDS 60 Vdc N-Channel Gate-Source Voltage - Continuous VGS 20 Vdc D - Non-repetitive (tp 50 ms) VGSM 40 Vpk Drain Current (Note) ID 0.5 Adc Total Device Di

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BS170/D TMOS FET Switching N Channel Enhancement BS170 1 DRAIN 2 GATE 3 SOURCE MAXIMUM RATINGS 1 2 Rating Symbol Value Unit 3 Drain Source Voltage VDS 60 Vdc CASE 29 04, STYLE 30 Gate Source Voltage TO 92 (TO 226AA) Continuous VGS 20 Vdc Non repetitive (tp 50 s) VGSM 40 Vpk

2N7000KL/BS170KL Vishay Siliconix N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) rDS(on) ( ) VGS(th) (V) ID (A) Pb-free ESD Protected 2000 V Available 2 at VGS = 10 V 0.47 60 1.0 to 2.5 RoHS* APPLICATIONS COMPLIANT 4 at VGS = 4.5 V 0.33 Direct Logic-Level Interface TTL/CMOS Solid-State Relays Drivers Relays,

SOT23 N-CHANNEL ENHANCEMENT BS170F MODE VERTICAL DMOS FET ISSUE 3 - JANUARY 1996 FEATURES * 60Volt VDS S * RDS(ON) = 5 D G PARTMARKING DETAIL MV SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage VDS 60 V Continuous Drain Current at Tamb=25 C ID 0.15 mA Pulsed Drain Current IDM 3A Gate Source Voltage VGS 20 V Power Dissipation at Tamb=2

BS170G Small Signal MOSFET 500 mA, 60 Volts N-Channel TO-92 (TO-226) Features http //onsemi.com This is a Pb-Free Device* 500 mA, 60 Volts MAXIMUM RATINGS RDS(on) = 5.0 W Rating Symbol Value Unit Drain -Source Voltage VDS 60 Vdc N-Channel Gate-Source Voltage D - Continuous VGS 20 Vdc - Non-repetitive (tp 50 ms) VGSM 40 Vpk Drain Current (Note) ID 0.5 Adc G Total

BS170G Small Signal MOSFET 500 mA, 60 Volts N-Channel TO-92 (TO-226) Features http //onsemi.com This is a Pb-Free Device* 500 mA, 60 Volts MAXIMUM RATINGS RDS(on) = 5.0 W Rating Symbol Value Unit Drain -Source Voltage VDS 60 Vdc N-Channel Gate-Source Voltage D - Continuous VGS 20 Vdc - Non-repetitive (tp 50 ms) VGSM 40 Vpk Drain Current (Note) ID 0.5 Adc G Total

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N-CHANNEL ENHANCEMENT BS170P MODE VERTICAL DMOS FET ISSUE 2 SEPT 93 FEATURES * 60 Volt VDS * RDS(on)=5 D G S REFER TO ZVN3306A FOR GRAPHS E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage VDS 60 V Continuous Drain Current at Tamb =25 C ID 270 mA Pulsed Drain Current IDM 3A Gate-Source Voltage VGS 20 V Power Dissipati

Shantou Huashan Electronic Devices Co.,Ltd. HBS170 N-Channel Enhancement Mode Field Effect Transistor General Description These products have been designed to minimize on-state resistance TO-92 While provide rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 500mA DC. These products are particularly suited for low voltage,

N-CHANNEL ENHANCEMENT BS170P MODE VERTICAL DMOS FET ISSUE 2 SEPT 93 FEATURES * 60 Volt VDS * RDS(on)=5 D G S REFER TO ZVN3306A FOR GRAPHS E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage VDS 60 V Continuous Drain Current at Tamb =25 C ID 270 mA Pulsed Drain Current IDM 3A Gate-Source Voltage VGS 20 V Power Dissipati

SOT23 N-CHANNEL ENHANCEMENT BS170F MODE VERTICAL DMOS FET ISSUE 3 - JANUARY 1996 FEATURES * 60Volt VDS S * RDS(ON) = 5 D G PARTMARKING DETAIL MV SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage VDS 60 V Continuous Drain Current at Tamb=25 C ID 0.15 mA Pulsed Drain Current IDM 3A Gate Source Voltage VGS 20 V Power Dissipation at Tamb=2