AUIRLR3636 Todos los transistores

 

AUIRLR3636 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AUIRLR3636
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 143 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 16 V
   |Id|ⓘ - Corriente continua de drenaje: 99 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 216 nS
   Cossⓘ - Capacitancia de salida: 332 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0068 Ohm
   Paquete / Cubierta: DPAK
     - Selección de transistores por parámetros

 

AUIRLR3636 Datasheet (PDF)

 ..1. Size:636K  infineon
auirlr3636.pdf pdf_icon

AUIRLR3636

AUTOMOTIVE GRADE AUIRLR3636 Features HEXFET Power MOSFET Advanced Process Technology VDSS 60V Ultra Low On-Resistance RDS(on) typ. 5.4m Logic Level Gate Drive max. 6.8m 175C Operating Temperature ID (Silicon Limited) 99A Fast Switching ID (Package Limited) 50A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS C

 7.1. Size:246K  international rectifier
auirlr3410trl.pdf pdf_icon

AUIRLR3636

PD - 97491AUTOMOTIVE GRADEAUIRLR3410Features Advanced Planar TechnologyHEXFET Power MOSFET Low On-Resistance Dynamic dV/dT Rating DV(BR)DSS100V 175C Operating Temperature Fast SwitchingRDS(on) max.105mG Fully Avalanche Rated Repetitive Avalanche Allowed up toID17ASTjmax Lead-Free, RoHS Compliant Automotive Qualified *DDescriptionSpecifica

 7.2. Size:228K  international rectifier
auirlr3915.pdf pdf_icon

AUIRLR3636

PD - 97743AUTOMOTIVE GRADEAUIRLR3915FeaturesHEXFET Power MOSFETl Advanced Planar Technologyl Logic-Level Gate DriveDV(BR)DSS55Vl Low On-ResistanceRDS(on) typ.12ml 175C Operating Temperaturel Fast Switchingmax 14mGl Fully Avalanche RatedID (Silicon Limited)61Al Repetitive Avalanche AllowedSup to Tjmax ID (Package Limited)30Al Lead-Free, R

 7.3. Size:287K  international rectifier
auirlr3705ztr.pdf pdf_icon

AUIRLR3636

PD - 97611AUTOMOTIVE GRADEAUIRLR3705ZFeaturesHEXFET Power MOSFET Logic Level Advanced Process TechnologyDV(BR)DSS 55V Ultra Low On-Resistance 175C Operating Temperature RDS(on) max.8.0m Fast SwitchingGID (Silicon Limited)89A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant SID (Package Limited)42A Automotiv

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