AUIRLR3636 Specs and Replacement

Type Designator: AUIRLR3636

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 143 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V

|Id| ⓘ - Maximum Drain Current: 99 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 216 nS

Cossⓘ - Output Capacitance: 332 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0068 Ohm

Package: DPAK

AUIRLR3636 substitution

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AUIRLR3636 datasheet

 ..1. Size:636K  infineon
 auirlr3636.pdf pdf_icon

AUIRLR3636

AUTOMOTIVE GRADE AUIRLR3636 Features HEXFET Power MOSFET Advanced Process Technology VDSS 60V Ultra Low On-Resistance RDS(on) typ. 5.4m Logic Level Gate Drive max. 6.8m 175 C Operating Temperature ID (Silicon Limited) 99A Fast Switching ID (Package Limited) 50A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS C... See More ⇒

 7.1. Size:246K  international rectifier
 auirlr3410trl.pdf pdf_icon

AUIRLR3636

PD - 97491 AUTOMOTIVE GRADE AUIRLR3410 Features Advanced Planar Technology HEXFET Power MOSFET Low On-Resistance Dynamic dV/dT Rating D V(BR)DSS 100V 175 C Operating Temperature Fast Switching RDS(on) max. 105m G Fully Avalanche Rated Repetitive Avalanche Allowed up to ID 17A S Tjmax Lead-Free, RoHS Compliant Automotive Qualified * D Description Specifica... See More ⇒

 7.2. Size:228K  international rectifier
 auirlr3915.pdf pdf_icon

AUIRLR3636

PD - 97743 AUTOMOTIVE GRADE AUIRLR3915 Features HEXFET Power MOSFET l Advanced Planar Technology l Logic-Level Gate Drive D V(BR)DSS 55V l Low On-Resistance RDS(on) typ. 12m l 175 C Operating Temperature l Fast Switching max 14m G l Fully Avalanche Rated ID (Silicon Limited) 61A l Repetitive Avalanche Allowed S up to Tjmax ID (Package Limited) 30A l Lead-Free, R... See More ⇒

 7.3. Size:287K  international rectifier
 auirlr3705ztr.pdf pdf_icon

AUIRLR3636

PD - 97611 AUTOMOTIVE GRADE AUIRLR3705Z Features HEXFET Power MOSFET Logic Level Advanced Process Technology D V(BR)DSS 55V Ultra Low On-Resistance 175 C Operating Temperature RDS(on) max. 8.0m Fast Switching G ID (Silicon Limited) 89A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant S ID (Package Limited) 42A Automotiv... See More ⇒

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Detailed specifications: AUIRLR2703, AUIRLR2905, AUIRLR2905Z, AUIRLR2908, AUIRLR3105, AUIRLR3110Z, AUIRLR3114Z, AUIRLR3410, AO3401, AUIRLR3705Z, AUIRLR3714, AUIRLR3915, AUIRLS3034, AUIRLS3034-7P, AUIRLS3036, AUIRLS3036-7P, AUIRLS4030

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.