AUIRLS3036 Todos los transistores

 

AUIRLS3036 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AUIRLS3036
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 380 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 16 V
   |Id|ⓘ - Corriente continua de drenaje: 270 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 220 nS
   Cossⓘ - Capacitancia de salida: 1020 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0024 Ohm
   Paquete / Cubierta: TO263
 

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AUIRLS3036 Datasheet (PDF)

 ..1. Size:288K  international rectifier
 auirls3036.pdf pdf_icon

AUIRLS3036

AUTOMOTIVE GRADEAUIRLS3036HEXFET Power MOSFETFeatures Advanced Process TechnologyDVDSS 60V Ultra Low On-ResistanceRDS(on) typ.1.9m Logic Level Gate Drive Dynamic dv/dt Ratingmax. 2.4mG 175C Operating TemperatureID (Silicon Limited) 270A Fast SwitchingID (Package Limited)S 195A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant

 0.1. Size:688K  infineon
 auirls3036-7p.pdf pdf_icon

AUIRLS3036

AUTOMOTIVE GRADE AUIRLS3036-7P HEXFET Power MOSFET Features Advanced Process Technology VDSS 60V Ultra Low On-Resistance RDS(on) typ. 1.5m Logic Level Gate Drive max. Dynamic dv/dt Rating 1.9m 175C Operating Temperature ID (Silicon Limited) 300A Fast Switching ID (Package Limited) 240A Repetitive Avalanche Allowed up to T

 5.1. Size:680K  infineon
 auirls3034.pdf pdf_icon

AUIRLS3036

AUTOMOTIVE GRADE AUIRLS3034 HEXFET Power MOSFET Features Advanced Process Technology VDSS 40V Ultra Low On-Resistance RDS(on) typ. 1.4m Logic Level Gate Drive max. 1.7m Dynamic dv/dt Rating ID (Silicon Limited) 343A 175C Operating Temperature Fast Switching ID (Package Limited) 195A Repetitive Avalanche Allowed up to Tjmax

 5.2. Size:699K  infineon
 auirls3034-7p.pdf pdf_icon

AUIRLS3036

AUTOMOTIVE GRADE AUIRLS3034-7P HEXFET Power MOSFET Features Advanced Process Technology VDSS 40V Ultra Low On-Resistance RDS(on) typ. 1.0m Logic Level Gate Drive max. Dynamic dv/dt Rating 1.4m 175C Operating Temperature ID (Silicon Limited) 380A Fast Switching ID (Package Limited) 240A Repetitive Avalanche Allowed up to T

MOSTRAR MÁS

Otros transistores... AUIRLR3114Z , AUIRLR3410 , AUIRLR3636 , AUIRLR3705Z , AUIRLR3714 , AUIRLR3915 , AUIRLS3034 , AUIRLS3034-7P , IRFB3607 , AUIRLS3036-7P , AUIRLS4030 , AUIRLS4030-7P , AUIRLU024N , AUIRLU3110Z , AUIRLU3114Z , AUIRLZ44Z , IRF5803 .

History: 630A | DMG10N60SCT | 19N20 | LP0404N3T5G | 100N10NF | AP2330GN | APT30M40B2VRG

 

 
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