AUIRLS4030-7P MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: AUIRLS4030-7P
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 370 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 16 V
   |Id|ⓘ - Corriente continua de drenaje: 190 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 160 nS
   Cossⓘ - Capacitancia de salida: 680 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0039 Ohm
   Paquete / Cubierta: TO263

Búsqueda de reemplazo de MOSFET AUIRLS4030-7P

AUIRLS4030-7P Datasheet (PDF)

..1. Size:686K infineon
auirls4030-7p.pdf

AUTOMOTIVE GRADE AUIRLS4030-7P HEXFET Power MOSFET Features Optimized for Logic Level Drive VDSS 100V Advanced Process Technology RDS(on) typ. 3.2m Ultra Low On-Resistance Logic Level Gate Drive max. 3.9m 175C Operating Temperature ID 190A Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compl

4.1. Size:501K infineon
auirls4030 auirlsl4030.pdf

AUIRLS4030 AUTOMOTIVE GRADE AUIRLSL4030 Features HEXFET Power MOSFET Optimized for Logic Level Drive Advanced Process Technology D VDSS 100V Ultra Low On-Resistance RDS(on) typ. 3.4m Logic Level Gate Drive G175C Operating Temperature max 4.3mFast Switching S Repetitive Avalanche Allowed up to Tjmax ID

8.1. Size:264K international rectifier
auirlsl4030.pdf

PD - 96406BAUTOMOTIVE GRADEAUIRLS4030FeaturesAUIRLSL4030l Optimized for Logic Level DriveHEXFET Power MOSFETl Advanced Process TechnologyDl Ultra Low On-ResistanceVDSS100Vl 175C Operating TemperatureRDS(on) typ.l Fast Switching 3.4ml Repetitive Avalanche Allowed up to TjmaxG max. 4.3ml Lead-Free, RoHS Compliantl Automotive Qualified *ID 180A

8.2. Size:238K international rectifier
auirls3114z.pdf

PD - 96412AUTOMOTIVE GRADEAUIRLS3114ZHEXFET Power MOSFETFeaturesVDSS40VDl Advanced Process TechnologyRDS(on) typ.l Ultra Low On-Resistance 3.8ml Enhanced dV/dT and dI/dT capability max. 4.9ml 175C Operating TemperatureGl Fast Switching ID (Silicon Limited) 122Al Repetitive Avalanche Allowed up to TjmaxSID (Wirebond Limited)56A l Lead-Free, RoHS

8.3. Size:288K international rectifier
auirls3036.pdf

AUTOMOTIVE GRADEAUIRLS3036HEXFET Power MOSFETFeatures Advanced Process TechnologyDVDSS 60V Ultra Low On-ResistanceRDS(on) typ.1.9m Logic Level Gate Drive Dynamic dv/dt Ratingmax. 2.4mG 175C Operating TemperatureID (Silicon Limited) 270A Fast SwitchingID (Package Limited)S 195A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant

8.4. Size:688K infineon
auirls3036-7p.pdf

AUTOMOTIVE GRADE AUIRLS3036-7P HEXFET Power MOSFET Features Advanced Process Technology VDSS 60V Ultra Low On-Resistance RDS(on) typ. 1.5m Logic Level Gate Drive max. Dynamic dv/dt Rating 1.9m 175C Operating Temperature ID (Silicon Limited) 300A Fast Switching ID (Package Limited) 240A Repetitive Avalanche Allowed up to T

8.5. Size:680K infineon
auirls3034.pdf

AUTOMOTIVE GRADE AUIRLS3034 HEXFET Power MOSFET Features Advanced Process Technology VDSS 40V Ultra Low On-Resistance RDS(on) typ. 1.4m Logic Level Gate Drive max. 1.7m Dynamic dv/dt Rating ID (Silicon Limited) 343A 175C Operating Temperature Fast Switching ID (Package Limited) 195A Repetitive Avalanche Allowed up to Tjmax

8.6. Size:273K infineon
auirls8409-7p.pdf

AUIRLS8409-7P Features VDSS 40V Advanced Process Technology RDS(on) typ. 0.50m Logic Level Gate Drive max. Ultra Low On-Resistance 0.75m 175C Operating Temperature ID (Silicon Limited) 500A Fast Switching ID (Package Limited) 240A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified *

8.7. Size:699K infineon
auirls3034-7p.pdf

AUTOMOTIVE GRADE AUIRLS3034-7P HEXFET Power MOSFET Features Advanced Process Technology VDSS 40V Ultra Low On-Resistance RDS(on) typ. 1.0m Logic Level Gate Drive max. Dynamic dv/dt Rating 1.4m 175C Operating Temperature ID (Silicon Limited) 380A Fast Switching ID (Package Limited) 240A Repetitive Avalanche Allowed up to T

8.8. Size:653K infineon
auirls3114z.pdf

AUTOMOTIVE GRADE AUIRLS3114Z HEXFET Power MOSFET Features Advanced Process Technology VDSS 40V Ultra Low On-Resistance RDS(on) typ. 3.8m Logic Level Gate Drive max. 4.9m Enhanced dv/dt and di/dt capability ID (Silicon Limited) 122A 175C Operating Temperature Fast Switching ID (Package Limited) 56A Repetitive Avalanche Allow

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