AUIRLU024N MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: AUIRLU024N
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Máxima disipación de potencia (Pd): 45 W
   Voltaje máximo drenador - fuente |Vds|: 55 V
   Voltaje máximo fuente - puerta |Vgs|: 16 V
   Corriente continua de drenaje |Id|: 17 A
   Temperatura máxima de unión (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   Tensión umbral entre puerta y fuente |Vgs(th)|: 2 V
   Carga de la puerta (Qg): 15(max) nC
   Tiempo de subida (tr): 74 nS
   Conductancia de drenaje-sustrato (Cd): 130 pF
   Resistencia entre drenaje y fuente RDS(on): 0.065 Ohm
   Paquete / Cubierta: IPAK

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AUIRLU024N Datasheet (PDF)

..1. Size:490K international rectifier
auirlr024n auirlu024n.pdf

AUIRLR024N AUTOMOTIVE GRADE AUIRLU024N Features HEXFET Power MOSFET Advanced Planar Technology Low On-Resistance VDSS 55V Logic-Level Gate Drive RDS(on) max. 0.065 Dynamic dv/dt Rating 175C Operating Temperature ID 17A Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax D Lead-Free, RoHS Com

5.1. Size:260K international rectifier
auirlu024z.pdf

PD - 97753AUTOMOTIVE GRADEAUIRLR024ZAUIRLU024ZFeaturesHEXFET Power MOSFET Logic Level Advanced Process Technology DV(BR)DSS55V Ultra Low On-ResistanceRDS(on) typ.46m 175C Operating TemperatureG Fast Switching max. 58m Repetitive Avalanche Allowed up to TjmaxSID16A Lead-Free, RoHS Compliant Automotive Qualified *DD

5.2. Size:717K infineon
auirlr024z auirlu024z.pdf

AUIRLR024Z AUTOMOTIVE GRADE AUIRLU024Z Features HEXFET Power MOSFET Logic Level VDSS 55V Advanced Process Technology Ultra Low On-Resistance RDS(on) typ. 46m 175C Operating Temperature Fast Switching max. 58m Repetitive Avalanche Allowed up to Tjmax ID 16A Lead-Free, RoHS Compliant Automotive Qualified * D D De

8.1. Size:714K infineon
auirlr3110z auirlu3110z.pdf

AUIRLR3110Z AUTOMOTIVE GRADE AUIRLU3110Z Features HEXFET Power MOSFET Advanced Process Technology VDSS 100V Ultra Low On-Resistance RDS(on) typ. 11m Logic Level Gate Drive max. 14m 175C Operating Temperature ID (Silicon Limited) 63A Fast Switching ID (Package Limited) 42A Repetitive Avalanche Allowed up to Tjmax Lea

8.2. Size:706K infineon
auirlr3114z auirlu3114z.pdf

AUIRLR3114Z AUTOMOTIVE GRADE AUIRLU3114Z Features HEXFET Power MOSFET Advanced Process Technology VDSS 40V Ultra Low On-Resistance Logic Level Gate Drive RDS(on) typ. 4.9m 175C Operating Temperature max. 6.5m Fast Switching ID (Silicon Limited) 130A Repetitive Avalanche Allowed up to Tjmax ID (Package Limited) 42A L

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