AUIRLU024N MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AUIRLU024N

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 45 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 55 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 16 V

|Id|ⓘ - Corriente continua de drenaje: 17 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 74 nS

Cossⓘ - Capacitancia de salida: 130 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.065 Ohm

Encapsulados: IPAK

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AUIRLU024N datasheet

 ..1. Size:490K  international rectifier
auirlr024n auirlu024n.pdf pdf_icon

AUIRLU024N

AUIRLR024N AUTOMOTIVE GRADE AUIRLU024N Features HEXFET Power MOSFET Advanced Planar Technology Low On-Resistance VDSS 55V Logic-Level Gate Drive RDS(on) max. 0.065 Dynamic dv/dt Rating 175 C Operating Temperature ID 17A Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax D Lead-Free, RoHS Com

 5.1. Size:260K  international rectifier
auirlu024z.pdf pdf_icon

AUIRLU024N

PD - 97753 AUTOMOTIVE GRADE AUIRLR024Z AUIRLU024Z Features HEXFET Power MOSFET Logic Level Advanced Process Technology D V(BR)DSS 55V Ultra Low On-Resistance RDS(on) typ. 46m 175 C Operating Temperature G Fast Switching max. 58m Repetitive Avalanche Allowed up to Tjmax S ID 16A Lead-Free, RoHS Compliant Automotive Qualified * D D

 5.2. Size:717K  infineon
auirlr024z auirlu024z.pdf pdf_icon

AUIRLU024N

AUIRLR024Z AUTOMOTIVE GRADE AUIRLU024Z Features HEXFET Power MOSFET Logic Level VDSS 55V Advanced Process Technology Ultra Low On-Resistance RDS(on) typ. 46m 175 C Operating Temperature Fast Switching max. 58m Repetitive Avalanche Allowed up to Tjmax ID 16A Lead-Free, RoHS Compliant Automotive Qualified * D D De

 8.1. Size:714K  infineon
auirlr3110z auirlu3110z.pdf pdf_icon

AUIRLU024N

AUIRLR3110Z AUTOMOTIVE GRADE AUIRLU3110Z Features HEXFET Power MOSFET Advanced Process Technology VDSS 100V Ultra Low On-Resistance RDS(on) typ. 11m Logic Level Gate Drive max. 14m 175 C Operating Temperature ID (Silicon Limited) 63A Fast Switching ID (Package Limited) 42A Repetitive Avalanche Allowed up to Tjmax Lea

Otros transistores... AUIRLR3714, AUIRLR3915, AUIRLS3034, AUIRLS3034-7P, AUIRLS3036, AUIRLS3036-7P, AUIRLS4030, AUIRLS4030-7P, 5N65, AUIRLU3110Z, AUIRLU3114Z, AUIRLZ44Z, IRF5803, IRF5803D2, IRF5805, IRF5806, IRF6216