AUIRLU3110Z MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AUIRLU3110Z

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 140 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 16 V

|Id|ⓘ - Corriente continua de drenaje: 63 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 110 nS

Cossⓘ - Capacitancia de salida: 310 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.014 Ohm

Encapsulados: IPAK

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AUIRLU3110Z datasheet

 ..1. Size:714K  infineon
 auirlr3110z auirlu3110z.pdf pdf_icon

AUIRLU3110Z

AUIRLR3110Z AUTOMOTIVE GRADE AUIRLU3110Z Features HEXFET Power MOSFET Advanced Process Technology VDSS 100V Ultra Low On-Resistance RDS(on) typ. 11m Logic Level Gate Drive max. 14m 175 C Operating Temperature ID (Silicon Limited) 63A Fast Switching ID (Package Limited) 42A Repetitive Avalanche Allowed up to Tjmax Lea

 5.1. Size:706K  infineon
 auirlr3114z auirlu3114z.pdf pdf_icon

AUIRLU3110Z

AUIRLR3114Z AUTOMOTIVE GRADE AUIRLU3114Z Features HEXFET Power MOSFET Advanced Process Technology VDSS 40V Ultra Low On-Resistance Logic Level Gate Drive RDS(on) typ. 4.9m 175 C Operating Temperature max. 6.5m Fast Switching ID (Silicon Limited) 130A Repetitive Avalanche Allowed up to Tjmax ID (Package Limited) 42A L

 8.1. Size:490K  international rectifier
 auirlr024n auirlu024n.pdf pdf_icon

AUIRLU3110Z

AUIRLR024N AUTOMOTIVE GRADE AUIRLU024N Features HEXFET Power MOSFET Advanced Planar Technology Low On-Resistance VDSS 55V Logic-Level Gate Drive RDS(on) max. 0.065 Dynamic dv/dt Rating 175 C Operating Temperature ID 17A Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax D Lead-Free, RoHS Com

 8.2. Size:260K  international rectifier
 auirlu024z.pdf pdf_icon

AUIRLU3110Z

PD - 97753 AUTOMOTIVE GRADE AUIRLR024Z AUIRLU024Z Features HEXFET Power MOSFET Logic Level Advanced Process Technology D V(BR)DSS 55V Ultra Low On-Resistance RDS(on) typ. 46m 175 C Operating Temperature G Fast Switching max. 58m Repetitive Avalanche Allowed up to Tjmax S ID 16A Lead-Free, RoHS Compliant Automotive Qualified * D D

MOSTRAR MÁS

Otros transistores... AUIRLR3915, AUIRLS3034, AUIRLS3034-7P, AUIRLS3036, AUIRLS3036-7P, AUIRLS4030, AUIRLS4030-7P, AUIRLU024N, IRF1010E, AUIRLU3114Z, AUIRLZ44Z, IRF5803, IRF5803D2, IRF5805, IRF5806, IRF6216, IRF6217