BS250F MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

SOT23 P-CHANNEL ENHANCEMENTBS250FMODE VERTICAL DMOS FETISSUE 3 - JANUARY 1996SDG T I D T I SOT23ABSOLUTE MAXIMUM RATINGS. T V ITD i V I VD V i D i T ID I D i ID V I V V Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). T I T IT DITI D i VD V ID V V V I T I V V ID VD V V I I V V VD V V I D i

SOT23 P-CHANNEL ENHANCEMENTBS250FMODE VERTICAL DMOS FETISSUE 3 - JANUARY 1996SDG T I D T I SOT23ABSOLUTE MAXIMUM RATINGS. T V ITD i V I VD V i D i T ID I D i ID V I V V Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). T I T IT DITI D i VD V ID V V V I T I V V ID VD V V I I V V VD V V I D i

DISCRETE SEMICONDUCTORSDATA SHEETBS250P-channel enhancement modevertical D-MOS transistorApril 1995Product specificationFile under Discrete Semiconductors, SC13bPhilips Semiconductors Product specificationP-channel enhancement mode verticalBS250D-MOS transistorDESCRIPTION QUICK REFERENCE DATAP-channel enhancement modeDrain-source voltage -VDS max. 45 Vvertical D-M

TP0610L/T, VP0610L/T, BS250Vishay SiliconixP-Channel 60-V (D-S) MOSFETPRODUCT SUMMARYPart Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A)TP0610L -60 10 @ VGS = -10 V -1 to -2.4 -0.18TP0610T -60 10 @ VGS = -10 V -1 to -2.4 -0.12VP0610L -60 10 @ VGS = -10 V -1 to -3.5 -0.18VP0610T -60 10 @ VGS = -10 V -1 to -3.5 -0.12BS250 -45 14 @ VGS = -10 V -1 to -3.5 -0.18FEATUR

TP0610KL/BS250KLNew ProductVishay SiliconixP-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARYD TrenchFETr Power MOSFETD ESD Protected: 2000 VV(BR)DSS(min) (V) rDS(on) (W) VGS(th) (V) ID (A)APPLICATIONS6 @ VGS = -10 V -0.27-60 -1 to 3060 1 to -3.010 @ VGS = -4.5 V -0.21D Drivers: Relays, Solenoids, Lamps, Hammers,Displays, Memories, Transistors, etc.D Battery Oper

P-CHANNEL ENHANCEMENTBS250PMODE VERTICAL DMOS FETISSUE 2 SEPT 93 T V I VD D D T V E-LineTO92 CompatibleABSOLUTE MAXIMUM RATINGS. T V ITD i V I VD V i D i T ID I D i ID V I V V Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25C). T I T IT DITI D i VD V ID V V V I V V ID VD V T I V I I V V VD V V I ID V V

BS250CSM4PCHANNEL ENHANCEMENT MODE IN ACERAMIC SURFACE MOUNT PACKAGE FORMECHANICAL DATAHIGH REL APPLICATIONSDimensions in mm (inches)1.40 0.155.59 0.13(0.055 0.006)(0.22 0.005)0.25 0.03 FEATURES(0.01 0.001)0.23rad.(0.009) VDSS = 45V3 20.23 ID = 0.18A4 1m(0.009) rdson = 14 ohms1.02 0.20 2.03 0.20(0.04 0.008) (0

P-CHANNEL ENHANCEMENTBS250PMODE VERTICAL DMOS FETISSUE 2 SEPT 93 T V I VD D D T V E-LineTO92 CompatibleABSOLUTE MAXIMUM RATINGS. T V ITD i V I VD V i D i T ID I D i ID V I V V Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25C). T I T IT DITI D i VD V ID V V V I V V ID VD V T I V I I V V VD V V I ID V V