BS250F - описание и поиск аналогов

SOT23 P-CHANNEL ENHANCEMENT BS250F MODE VERTICAL DMOS FET ISSUE 3 - JANUARY 1996 S D G T I D T I SOT23 ABSOLUTE MAXIMUM RATINGS. T V IT D i V I VD V i D i T ID I D i ID V I V V Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25 C unless otherwise stated). T I T IT DITI D i VD V ID V V V I T I V V ID VD V V I I V V VD V V I D i

SOT23 P-CHANNEL ENHANCEMENT BS250F MODE VERTICAL DMOS FET ISSUE 3 - JANUARY 1996 S D G T I D T I SOT23 ABSOLUTE MAXIMUM RATINGS. T V IT D i V I VD V i D i T ID I D i ID V I V V Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25 C unless otherwise stated). T I T IT DITI D i VD V ID V V V I T I V V ID VD V V I I V V VD V V I D i

DISCRETE SEMICONDUCTORS DATA SHEET BS250 P-channel enhancement mode vertical D-MOS transistor April 1995 Product specification File under Discrete Semiconductors, SC13b Philips Semiconductors Product specification P-channel enhancement mode vertical BS250 D-MOS transistor DESCRIPTION QUICK REFERENCE DATA P-channel enhancement mode Drain-source voltage -VDS max. 45 V vertical D-M

TP0610L/T, VP0610L/T, BS250 Vishay Siliconix P-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) TP0610L -60 10 @ VGS = -10 V -1 to -2.4 -0.18 TP0610T -60 10 @ VGS = -10 V -1 to -2.4 -0.12 VP0610L -60 10 @ VGS = -10 V -1 to -3.5 -0.18 VP0610T -60 10 @ VGS = -10 V -1 to -3.5 -0.12 BS250 -45 14 @ VGS = -10 V -1 to -3.5 -0.18 FEATUR

TP0610KL/BS250KL New Product Vishay Siliconix P-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFET D ESD Protected 2000 V V(BR)DSS(min) (V) rDS(on) (W) VGS(th) (V) ID (A) APPLICATIONS 6 @ VGS = -10 V -0.27 -60 -1 to 30 60 1 to -3.0 10 @ VGS = -4.5 V -0.21 D Drivers Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. D Battery Oper

P-CHANNEL ENHANCEMENT BS250P MODE VERTICAL DMOS FET ISSUE 2 SEPT 93 T V I VD D D T V E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. T V IT D i V I VD V i D i T ID I D i ID V I V V Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25 C). T I T IT DITI D i VD V ID V V V I V V ID VD V T I V I I V V VD V V I ID V V

BS250CSM4 P CHANNEL ENHANCEMENT MODE IN A CERAMIC SURFACE MOUNT PACKAGE FOR MECHANICAL DATA HIGH REL APPLICATIONS Dimensions in mm (inches) 1.40 0.15 5.59 0.13 (0.055 0.006) (0.22 0.005) 0.25 0.03 FEATURES (0.01 0.001) 0.23 rad. (0.009) VDSS = 45V 3 2 0.23 ID = 0.18A 4 1 m (0.009) rdson = 14 ohms 1.02 0.20 2.03 0.20 (0.04 0.008) (0

P-CHANNEL ENHANCEMENT BS250P MODE VERTICAL DMOS FET ISSUE 2 SEPT 93 T V I VD D D T V E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. T V IT D i V I VD V i D i T ID I D i ID V I V V Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25 C). T I T IT DITI D i VD V ID V V V I V V ID VD V T I V I I V V VD V V I ID V V