IRF6218S Todos los transistores

 ..1. Size:299K  international rectifier
 irf6218spbf.pdf

PD - 96181 IRF6218SPbF SMPS MOSFET IRF6218LPbF HEXFET Power MOSFET Applications l Reset Switch for Active Clamp VDSS RDS(on) max ID Reset DC-DC converters 150m @VGS = -10V -27A -150V Benefits D l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design (See G App. Note AN1001) D2Pak TO-262 l Fully Cha

 ..2. Size:454K  infineon
 irf6218spbf.pdf

SMPS MOSFET IRF6218SPbF HEXFET Power MOSFET Applications VDSS RDS(on) (max) ID Reset Switch for Active Clamp Reset DC-DC converters - 150V 150m @ VGS = -10V -27A Benefits D Low Gate to Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design (See App. Note AN1001) S Fully Characterized

 0.1. Size:229K  international rectifier
 auirf6218l auirf6218s.pdf

AUTOMOTIVE GRADE AUIRF6218S AUIRF6218L Features HEXFET Power MOSFET l Advanced Planar Technology l Low On-Resistance D V(BR)DSS -150V l P-Channel l Dynamic dV/dT Rating RDS(on) max 150m l 175 C Operating Temperature G l Fast Switching S ID -27A l Fully Avalanche Rated l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant D l Automotive Qualified * D

 7.1. Size:275K  international rectifier
 irf6218l.pdf

PD - 95863A IRF6218S SMPS MOSFET IRF6218L HEXFET Power MOSFET Applications l Reset Switch for Active Clamp VDSS RDS(on) max ID Reset DC-DC converters 150m @VGS = -10V -27A -150V Benefits D l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design (See G App. Note AN1001) TO-262 D2Pak l Fully Charact

 7.2. Size:136K  international rectifier
 irf6218pbf.pdf

PD -95441 IRF6218PbF SMPS MOSFET HEXFET Power MOSFET Applications VDSS RDS(on) max ID l Reset Switch for Active Clamp 150m @VGS = -10V -27A -150V Reset DC-DC converters l Lead-Free D Benefits l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including G Effective COSS to Simplify Design (See App. Note AN1001) TO-220AB S l Fully Charac

 7.3. Size:240K  inchange semiconductor
 irf6218.pdf

isc P-Channel MOSFET Transistor IRF6218,IIRF6218 FEATURES Static drain-source on-resistance RDS(on) 0.15 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Reset switch for active clamp Reset DC-DC converters Low gate to drain charge to reduce switching losses ABSOLUTE MAXIMUM