IRF6218S
MOSFET. Datasheet pdf. Equivalent
Type Designator: IRF6218S
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 250
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5
V
|Id|ⓘ - Maximum Drain Current: 27
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 71
nC
trⓘ - Rise Time: 70
nS
Cossⓘ -
Output Capacitance: 370
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.15
Ohm
Package:
D2PAK
IRF6218S
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRF6218S
Datasheet (PDF)
..1. Size:299K international rectifier
irf6218spbf.pdf 
PD - 96181IRF6218SPbFSMPS MOSFETIRF6218LPbFHEXFET Power MOSFETApplicationsl Reset Switch for Active ClampVDSS RDS(on) max IDReset DC-DC converters150m @VGS = -10V -27A-150VBenefitsDl Low Gate to Drain Charge to ReduceSwitching Lossesl Fully Characterized Capacitance IncludingEffective COSS to Simplify Design (SeeGApp. Note AN1001)D2Pak TO-262l Fully Cha
..2. Size:454K infineon
irf6218spbf.pdf
SMPS MOSFET IRF6218SPbF HEXFET Power MOSFET Applications VDSS RDS(on) (max) ID Reset Switch for Active Clamp Reset DC-DC converters - 150V 150m@ VGS = -10V -27A Benefits D Low Gate to Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design (See App. Note AN1001) S Fully Characterized
0.1. Size:229K international rectifier
auirf6218l auirf6218s.pdf
AUTOMOTIVE GRADEAUIRF6218SAUIRF6218LFeaturesHEXFET Power MOSFETl Advanced Planar Technologyl Low On-ResistanceDV(BR)DSS -150Vl P-Channell Dynamic dV/dT RatingRDS(on) max 150ml 175C Operating TemperatureGl Fast SwitchingS ID -27Al Fully Avalanche Ratedl Repetitive Avalanche Allowed up toTjmaxl Lead-Free, RoHS CompliantDl Automotive Qualified *D
7.1. Size:275K international rectifier
irf6218l.pdf
PD - 95863AIRF6218SSMPS MOSFETIRF6218LHEXFET Power MOSFETApplicationsl Reset Switch for Active ClampVDSS RDS(on) max IDReset DC-DC converters150m @VGS = -10V -27A-150VBenefitsDl Low Gate to Drain Charge to ReduceSwitching Lossesl Fully Characterized Capacitance IncludingEffective COSS to Simplify Design (SeeGApp. Note AN1001)TO-262D2Pakl Fully Charact
7.2. Size:136K international rectifier
irf6218pbf.pdf
PD -95441IRF6218PbFSMPS MOSFETHEXFET Power MOSFETApplicationsVDSS RDS(on) max IDl Reset Switch for Active Clamp150m @VGS = -10V -27A-150VReset DC-DC convertersl Lead-FreeDBenefitsl Low Gate to Drain Charge to ReduceSwitching Lossesl Fully Characterized Capacitance IncludingGEffective COSS to Simplify Design (SeeApp. Note AN1001)TO-220ABSl Fully Charac
7.3. Size:136K infineon
irf6218pbf.pdf
PD -95441IRF6218PbFSMPS MOSFETHEXFET Power MOSFETApplicationsVDSS RDS(on) max IDl Reset Switch for Active Clamp150m @VGS = -10V -27A-150VReset DC-DC convertersl Lead-FreeDBenefitsl Low Gate to Drain Charge to ReduceSwitching Lossesl Fully Characterized Capacitance IncludingGEffective COSS to Simplify Design (SeeApp. Note AN1001)TO-220ABSl Fully Charac
7.4. Size:240K inchange semiconductor
irf6218.pdf
isc P-Channel MOSFET Transistor IRF6218,IIRF6218FEATURESStatic drain-source on-resistance:RDS(on)0.15Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONReset switch for active clampReset DC-DC convertersLow gate to drain charge to reduce switching lossesABSOLUTE MAXIMUM
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