IRF9317 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IRF9317
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 16 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.4 V
   Qgⓘ - Carga de la puerta: 31 nC
   trⓘ - Tiempo de subida: 64 nS
   Cossⓘ - Capacitancia de salida: 640 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0066 Ohm
   Paquete / Cubierta: SO8

Búsqueda de reemplazo de MOSFET IRF9317

IRF9317 Datasheet (PDF)

..1. Size:216K international rectifier
irf9317pbf.pdf

PD - 97465IRF9317PbFHEXFET Power MOSFETVDS-30 VS 18 DRDS(on) max 6.6 mS 27 D(@VGS = -10V)RDS(on) max S 3 6 D10.2 m(@VGS = -4.5V)G 4 5 DQg (typical)31 nCSO-8ID -16 A(@TA = 25C)Applications Charge and Discharge Switch for Notebook PC Battery ApplicationFeatures and BenefitsResulting BenefitsFeaturesIndustry-Standard SO8 Package Multi-Vendor

..2. Size:219K infineon
irf9317pbf.pdf

0.1. Size:2418K slkor
irf9317tr.pdf

IRF9317TRP-Channel 30 V (D-S) MOSFETDescription This P-Channel MOSFET uses advanced trench technology and D design to provide excellent RDS(on) with low gate charge. D D It can be used in a wide variety of applications. D S1S S Features G 1) VDS=-30V,ID=-15A,RDS(ON)

8.1. Size:232K international rectifier
irf9310pbf-1.pdf

IRF9310PbF-1HEXFET Power MOSFETVDS -30 VRDS(on) max S 18 D4.6(@V = -10V)GSmS 27 DRDS(on) max 6.8(@V = -4.5V)GSS 3 6 DQg (typical) 58 nCG 4 5 DID -20 ASO-8(@T = 25C)AFeatures BenefitsIndustry-standard pinout SO-8 Package Multi-Vendor CompatibilityCompatible with Existing Surface Mount Techniques Easier ManufacturingRoHS Compliant, Halo

8.2. Size:277K international rectifier
irf9310pbf.pdf

PD - 97437AIRF9310PbFHEXFET Power MOSFETVDS-30 VRDS(on) max 4.6 m(@VGS = 10V)ID -20 A(@TA = 25C)SO-8Applications Charge and Discharge Switch for Notebook PC Battery ApplicationFeatures and BenefitsResulting BenefitsFeaturesLow RDSon ( 4.6m) Lower Conduction Lossesresults in Industry-Standard SO8 Package Multi-Vendor CompatibilityRoHS

8.3. Size:232K infineon
irf9310pbf-1.pdf

8.4. Size:812K cn vbsemi
irf9310trpbf-9.pdf

IRF9310TRPBF&-9www.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)d Qg (Typ.) TrenchFET Power MOSFET0.011 at VGS = - 10 V - 13.5 100 % Rg TestedRoHS- 30 29.5 nCCOMPLIANT 100 % UIS Tested0.015 at VGS = - 4.5 V - 11.6APPLICATIONS Load Switch Notebook Adaptor SwitchSO-8 S S1 8 DS D2

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: J212 | IXTT88N15

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