Справочник MOSFET. IRF9317

 

IRF9317 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IRF9317
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 2.5 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 16 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 64 ns
   Cossⓘ - Выходная емкость: 640 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0066 Ohm
   Тип корпуса: SO8

 Аналог (замена) для IRF9317

 

 

IRF9317 Datasheet (PDF)

 ..1. Size:216K  international rectifier
 irf9317pbf.pdf

IRF9317 IRF9317

PD - 97465IRF9317PbFHEXFET Power MOSFETVDS-30 VS 18 DRDS(on) max 6.6 mS 27 D(@VGS = -10V)RDS(on) max S 3 6 D10.2 m(@VGS = -4.5V)G 4 5 DQg (typical)31 nCSO-8ID -16 A(@TA = 25C)Applications Charge and Discharge Switch for Notebook PC Battery ApplicationFeatures and BenefitsResulting BenefitsFeaturesIndustry-Standard SO8 Package Multi-Vendor

 ..2. Size:219K  infineon
 irf9317pbf.pdf

IRF9317 IRF9317

PD - 97465IRF9317PbFHEXFET Power MOSFETVDS-30 VS 18 DRDS(on) max 6.6 mS 27 D(@VGS = -10V)RDS(on) max S 3 6 D10.2 m(@VGS = -4.5V)G 4 5 DQg (typical)31 nCSO-8ID -16 A(@TA = 25C)Applications Charge and Discharge Switch for Notebook PC Battery ApplicationFeatures and BenefitsResulting BenefitsFeaturesIndustry-Standard SO8 Package Multi-Vendor

 0.1. Size:2418K  slkor
 irf9317tr.pdf

IRF9317 IRF9317

IRF9317TRP-Channel 30 V (D-S) MOSFETDescription This P-Channel MOSFET uses advanced trench technology and D design to provide excellent RDS(on) with low gate charge. D D It can be used in a wide variety of applications. D S1S S Features G 1) VDS=-30V,ID=-15A,RDS(ON)

 8.1. Size:232K  international rectifier
 irf9310pbf-1.pdf

IRF9317 IRF9317

IRF9310PbF-1HEXFET Power MOSFETVDS -30 VRDS(on) max S 18 D4.6(@V = -10V)GSmS 27 DRDS(on) max 6.8(@V = -4.5V)GSS 3 6 DQg (typical) 58 nCG 4 5 DID -20 ASO-8(@T = 25C)AFeatures BenefitsIndustry-standard pinout SO-8 Package Multi-Vendor CompatibilityCompatible with Existing Surface Mount Techniques Easier ManufacturingRoHS Compliant, Halo

 8.2. Size:277K  international rectifier
 irf9310pbf.pdf

IRF9317 IRF9317

PD - 97437AIRF9310PbFHEXFET Power MOSFETVDS-30 VRDS(on) max 4.6 m(@VGS = 10V)ID -20 A(@TA = 25C)SO-8Applications Charge and Discharge Switch for Notebook PC Battery ApplicationFeatures and BenefitsResulting BenefitsFeaturesLow RDSon ( 4.6m) Lower Conduction Lossesresults in Industry-Standard SO8 Package Multi-Vendor CompatibilityRoHS

 8.3. Size:232K  infineon
 irf9310pbf-1.pdf

IRF9317 IRF9317

IRF9310PbF-1HEXFET Power MOSFETVDS -30 VRDS(on) max S 18 D4.6(@V = -10V)GSmS 27 DRDS(on) max 6.8(@V = -4.5V)GSS 3 6 DQg (typical) 58 nCG 4 5 DID -20 ASO-8(@T = 25C)AFeatures BenefitsIndustry-standard pinout SO-8 Package Multi-Vendor CompatibilityCompatible with Existing Surface Mount Techniques Easier ManufacturingRoHS Compliant, Halo

 8.4. Size:812K  cn vbsemi
 irf9310trpbf-9.pdf

IRF9317 IRF9317

IRF9310TRPBF&-9www.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)d Qg (Typ.) TrenchFET Power MOSFET0.011 at VGS = - 10 V - 13.5 100 % Rg TestedRoHS- 30 29.5 nCCOMPLIANT 100 % UIS Tested0.015 at VGS = - 4.5 V - 11.6APPLICATIONS Load Switch Notebook Adaptor SwitchSO-8 S S1 8 DS D2

Другие MOSFET... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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