IRF9335 Todos los transistores

 

IRF9335 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRF9335

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 2.5 W

Tensión drenaje-fuente (Vds): 30 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 5.4 A

CARACTERÍSTICAS ELÉCTRICAS

Resistencia drenaje-fuente RDS(on): 0.059 Ohm

Empaquetado / Estuche: SO8

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IRF9335 Datasheet (PDF)

1.1. irf9335pbf.pdf Size:266K _upd-mosfet

IRF9335
IRF9335

PD - 96311A IRF9335PbF HEXFET® Power MOSFET VDS -30 V S 18 D RDS(on) max 59 mΩ S 27 D (@VGS = -10V) S 3 6 D RDS(on) max 110 mΩ (@VGS = -4.5V) G 4 5 D Qg (typical) 9.1 nC SO-8 ID -5.4 A (@TA = 25°C) Applications • Charge and Discharge Switch for Notebook PC Battery Application • System/Load Switch Features and Benefits Features Resulting Benefits Industry-S

4.1. irf9332pbf.pdf Size:283K _upd-mosfet

IRF9335
IRF9335

PD - 97561 IRF9332PbF HEXFET® Power MOSFET VDS -30 V RDS(on) max 17.5 mΩ (@VGS = -10V) RDS(on) max 28.1 mΩ (@VGS = -4.5V) Qg (typical) 14 nC SO-8 ID -9.8 A (@TA = 25°C) Applications • Charge and Discharge Switch for Notebook PC Battery Application • System/Load Switch Features and Benefits Features Resulting Benefits Industry-Standard SO-8 Package results in M

4.2. irf9333pbf.pdf Size:310K _upd-mosfet

IRF9335
IRF9335

PD - 97523 IRF9333PbF HEXFET® Power MOSFET VDS -30 V RDS(on) max 19.4 m (@VGS = -10V) RDS(on) max 32.5 m (@VGS = -4.5V) Qg (typical) 14 nC SO-8 ID -9.2 A (@TA = 25°C) Applications • Charge and Discharge Switch for Notebook PC Battery Application Features and Benefits Resulting Benefits Features Industry-Standard SO8 Package Multi-Vendor Compatibility RoHS Complian

Otros transistores... NTD70N03R , NTE4151P , NTE4153N , NTF2955 , NTF3055-100 , NTF3055L108 , NTF5P03T3 , NTF6P02 , IRF740 , NTGD3148N , NTGD4161P , NTGD4167C , NTGS3130N , NTGS3136P , NTGS3433 , NTGS3441 , NTGS3443 .

 
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