IRF9956 Todos los transistores

 

IRF9956 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRF9956

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 2 W

Tensión drenaje-fuente (Vds): 30 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 3.5 A

CARACTERÍSTICAS ELÉCTRICAS

Resistencia drenaje-fuente RDS(on): 0.1 Ohm

Empaquetado / Estuche: SO8

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IRF9956 Datasheet (PDF)

1.1. irf9956.pdf Size:107K _international_rectifier

IRF9956
IRF9956

PD - 9.1559A IRF9956 PRELIMINARY HEXFET Power MOSFET Generation V Technology 1 8 Ultra Low On-Resistance S1 D1 VDSS = 30V Dual N-Channel MOSFET 2 7 G1 D1 Surface Mount 3 6 S2 D2 Very Low Gate Charge and 4 5 G2 D2 Switching Losses RDS(on) = 0.10? Fully Avalanche Rated T op V iew Description Fifth Generation HEXFETs from International Rectifier Recommended upgrade: IRF

4.1. irf9952qpbf.pdf Size:280K _upd-mosfet

IRF9956
IRF9956

PD - 96115 IRF9952QPbF HEXFET® Power MOSFET l Advanced Process Technology N-CHANNEL MOSFET l Ultra Low On-Resistance 1 8 N-Ch P-Ch S1 D1 l Dual N and P Channel MOSFET 2 7 G1 D1 l Surface Mount VDSS 30V -30V 3 6 l Available in Tape & Reel S2 D2 l 150°C Operating Temperature 4 5 G2 D2 l Automotive [Q101] Qualified P-CHANNEL MOSFET RDS(on) 0.10Ω 0.25Ω l Lead-Free Top V

4.2. irf9952.pdf Size:134K _international_rectifier

IRF9956
IRF9956

PD - 9.1561A IRF9952 PRELIMINARY HEXFET Power MOSFET Generation V Technology N-CHANNEL MOSFE T 1 8 N-Ch P-Ch S1 D1 Ultra Low On-Resistance 2 7 Dual N and P Channel MOSFET G1 D1 Surface Mount VDSS 30V -30V 3 6 S2 D2 Very Low Gate Charge and 4 5 G2 D2 Switching Losses P -CH AN N EL M OSFET RDS(on) 0.10? 0.25? Fully Avalanche Rated T op V iew Recommended upgrade: IRF7309

 4.3. irf9953.pdf Size:107K _international_rectifier

IRF9956
IRF9956

PD - 9.1560A IRF9953 PRELIMINARY HEXFET Power MOSFET Generation V Technology 1 8 S1 D1 Ultra Low On-Resistance VDSS = -30V Dual P-Channel MOSFET 2 7 G1 D1 Surface Mount 3 6 S2 D2 Very Low Gate Charge and 4 5 G2 D2 Switching Losses RDS(on) = 0.25? Fully Avalanche Rated T op V iew Description Fifth Generation HEXFETs from International Rectifier Recommended upgrade: IRF7

Otros transistores... IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRFP354 , IRFP360 , IRFP360LC , IRFP3710 , J111 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP441 , IRFP442 , IRFP443 .

 

 
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