IRF9956 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: IRF9956
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 2 W
Предельно допустимое напряжение сток-исток |Uds|: 30 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 1 V
Максимально допустимый постоянный ток стока |Id|: 3.5 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 6.9 nC
Время нарастания (tr): 8.8 ns
Выходная емкость (Cd): 120 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.1 Ohm
Тип корпуса: SO8
IRF9956 Datasheet (PDF)
irf9956.pdf
PD - 9.1559AIRF9956PRELIMINARYHEXFET Power MOSFET Generation V Technology1 8 Ultra Low On-ResistanceS1 D1VDSS = 30V Dual N-Channel MOSFET2 7G1 D1 Surface Mount3 6S2 D2 Very Low Gate Charge and4 5G2 D2Switching LossesRDS(on) = 0.10 Fully Avalanche RatedT op V iewDescriptionFifth Generation HEXFETs from International RectifierRecommended upgrad
irf9956pbf.pdf
PD - 95259IRF9956PbFHEXFET Power MOSFETl Generation V Technologyl Ultra Low On-Resistance1 8S1 D1l Dual N-Channel MOSFETVDSS = 30V2 7l Surface Mount G1 D1l Very Low Gate Charge and 3 6S2 D2Switching Losses4 5G2 D2RDS(on) = 0.10l Fully Avalanche Ratedl Lead-FreeTop ViewDescriptionFifth Generation HEXFETs from International RectifierRecommended upg
auirf9952q.pdf
AUTOMOTIVE GRADE AUIRF9952Q Features N-CHANNEL MOSFET Advanced Planar Technology N-CH P-CH1 8S1 D1 Low On-Resistance 2 7G1 D1 Logic Level Gate Drive VDSS 30V -30V3 6S2 D2 Dual N and P Channel MOSFET 45G2 D2RDS(on) max. 0.10 0.25 Dynamic dv/dt Rating P-CHANNEL MOSFET 150C Operating Temperature Top ViewID 3.5A -2.3A
irf9952.pdf
PD - 9.1561AIRF9952PRELIMINARYHEXFET Power MOSFET Generation V TechnologyN-CHANNEL MOSFE T1 8 N-Ch P-ChS1 D1 Ultra Low On-Resistance2 7 Dual N and P Channel MOSFETG1 D1 Surface Mount VDSS 30V -30V3 6S2 D2 Very Low Gate Charge and4 5G2 D2Switching LossesP -CH AN N EL M OSFETRDS(on) 0.10 0.25 Fully Avalanche RatedT op V iewRecommended upgrade:
irf9953.pdf
PD - 9.1560AIRF9953PRELIMINARYHEXFET Power MOSFET Generation V Technology1 8S1 D1 Ultra Low On-ResistanceVDSS = -30V Dual P-Channel MOSFET 2 7G1 D1 Surface Mount3 6S2 D2 Very Low Gate Charge and4 5G2 D2Switching Losses RDS(on) = 0.25 Fully Avalanche RatedT op V iewDescriptionFifth Generation HEXFETs from International RectifierRecommended upgrade
irf9952qpbf.pdf
PD - 96115IRF9952QPbFHEXFET Power MOSFETl Advanced Process TechnologyN-CHANNEL MOSFETl Ultra Low On-Resistance 1 8N-Ch P-ChS1 D1l Dual N and P Channel MOSFET2 7G1 D1l Surface MountVDSS 30V -30V3 6l Available in Tape & ReelS2 D2l 150C Operating Temperature4 5G2 D2l Automotive [Q101] QualifiedP-CHANNEL MOSFETRDS(on) 0.10 0.25l Lead-FreeTop V
irf9953pbf.pdf
PD - 95477IRF9953PbFHEXFET Power MOSFETl Generation V Technologyl Ultra Low On-Resistance1 8S1 D1l Dual P-Channel MOSFETVDSS = -30V2 7G1 D1l Surface Mount3l Very Low Gate Charge and 6S2 D2Switching Losses4 5G2 D2RDS(on) = 0.25l Fully Avalanche Ratedl Lead-FreeTop ViewDescriptionFifth Generation HEXFETs from International RectifierRecommended
irf9952pbf.pdf
PD - 95135IRF9952PbFHEXFET Power MOSFETl Generation V TechnologyN-CHANNEL MOSFET1 8N-Ch P-ChS1 D1l Ultra Low On-Resistance2 7l Dual N and P Channel MOSFETG1 D1l Surface Mount VDSS 30V -30V3 6S2 D2l Very Low Gate Charge and4 5G2 D2Switching LossesP-CHANNEL MOSFETRDS(on) 0.10 0.25l Fully Avalanche RatedTop Viewl Lead-FreeRecommended upgrade:
Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 13N50 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
Список транзисторов
Обновления
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