IRFI4019HG-117P Todos los transistores

 

IRFI4019HG-117P MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRFI4019HG-117P

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 18 W

Tensión drenaje-fuente (Vds): 150 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 8.7 A

CARACTERÍSTICAS ELÉCTRICAS

Resistencia drenaje-fuente RDS(on): 0.095 Ohm

Empaquetado / Estuche: TO220FP

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IRFI4019HG-117P Datasheet (PDF)

5.1. irfi4410zgpbf.pdf Size:228K _international_rectifier

IRFI4019HG-117P
IRFI4019HG-117P

PD - 96372 IRFI4410ZGPbF HEXFET® Power MOSFET Applications VDSS 100V l High Efficiency Synchronous Rectification in SMPS RDS(on) typ. 7.9m l Uninterruptible Power Supply l High Speed Power Switching max. 9.3m l Hard Switched and High Frequency Circuits ID 43A Benefits D D l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche

5.2. irfi4321pbf.pdf Size:285K _international_rectifier

IRFI4019HG-117P
IRFI4019HG-117P

PD - 97104 IRFI4321PbF HEXFET® Power MOSFET Applications l Motion Control Applications l High Efficiency Synchronous Rectification in SMPS VDSS 150V l Uninterruptible Power Supply RDS(on) typ. 12.2m: l Hard Switched and High Frequency Circuits max. 16m: Benefits l Low RDSON Reduces Losses ID 34A l Low Gate Charge Improves the Switching Performance D D l Improved Diode Recov

 5.3. irfi4410zpbf.pdf Size:315K _international_rectifier

IRFI4019HG-117P
IRFI4019HG-117P

PD - 97475A IRFI4410ZPbF HEXFET® Power MOSFET Applications VDSS 100V l High Efficiency Synchronous Rectification in SMPS RDS(on) typ. 7.9m : l Uninterruptible Power Supply l High Speed Power Switching max. 9.3m : l Hard Switched and High Frequency Circuits ID 43A Benefits D D l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avala

5.4. auirfi4905.pdf Size:242K _international_rectifier

IRFI4019HG-117P
IRFI4019HG-117P

PD - 97765A AUTOMOTIVE GRADE AUIRFI4905 Features HEXFET® Power MOSFET ● Advanced Planar Technology ● P-Channel MOSFET D ● Low On-Resistance V(BR)DSS -55V ● Dynamic dV/dT Rating RDS(on) max. ● 175°C Operating Temperature 0.02  G ● Fast Switching ID -74A S ● Fully Avalanche Rated ● Repetitive Avalanche Allowed up to Tjmax ● Lead-Free, RoHS Compliant

 5.5. irfi4229pbf.pdf Size:245K _international_rectifier

IRFI4019HG-117P
IRFI4019HG-117P

PD - 97201B IRFI4229PbF PDP SWITCH Features Key Parameters l Advanced Process Technology VDS max 250 V l Key Parameters Optimized for PDP Sustain, VDS (Avalanche) typ. 300 V Energy Recovery and Pass Switch Applications l Low EPULSE Rating to Reduce Power RDS(ON) typ. @ 10V m 38 Dissipation in PDP Sustain, Energy Recovery IRP max @ TC= 100°C 32 A and Pass Switch Applications

5.6. irfi4228pbf.pdf Size:302K _international_rectifier

IRFI4019HG-117P
IRFI4019HG-117P

PD - 97228 IRFI4228PbF PDP SWITCH Features Key Parameters l Advanced Process Technology VDS max 150 V l Key Parameters Optimized for PDP Sustain, VDS (Avalanche) typ. 180 V Energy Recovery and Pass Switch Applications l Low EPULSE Rating to Reduce Power RDS(ON) typ. @ 10V m: 12.2 Dissipation in PDP Sustain, Energy Recovery IRP max @ TC= 100°C 61 A and Pass Switch Applicatio

5.7. irfi4905.pdf Size:120K _international_rectifier

IRFI4019HG-117P
IRFI4019HG-117P

PD - 9.1526A IRFI4905 HEXFET Power MOSFET Advanced Process Technology D Isolated Package VDSS = -55V High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm RDS(on) = 0.02? P-Channel G Fully Avalanche Rated ID = -41A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistan

5.8. irfi460.pdf Size:211K _international_rectifier

IRFI4019HG-117P
IRFI4019HG-117P

5.9. irfi4227pbf.pdf Size:290K _international_rectifier

IRFI4019HG-117P
IRFI4019HG-117P

PD - 97036B IRFI4227PbF PDP SWITCH Features Key Parameters l Advanced Process Technology VDS max 200 V l Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications VDS (Avalanche) typ. 240 V l Low EPULSE Rating to Reduce Power m RDS(ON) typ. @ 10V 21 Dissipation in PDP Sustain, Energy Recovery IRP max @ TC= 100°C 47 A and Pass Switch Applications

5.10. irfi4110gpbf.pdf Size:284K _international_rectifier

IRFI4019HG-117P
IRFI4019HG-117P

PD - 96347 IRFI4110GPbF Applications HEXFET® Power MOSFET l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply VDSS 100V l High Speed Power Switching RDS(on) typ. 3.7m Ω l Hard Switched and High Frequency Circuits max. 4.5mΩ ID (Silicon Limited) 72A Benefits l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness D D l Fully Characterized

5.11. irfi4228.pdf Size:200K _inchange_semiconductor

IRFI4019HG-117P
IRFI4019HG-117P

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IRFI4228 ·FEATURES ·With TO-220F package ·Low input capacitance and gate charge ·Low gate input resistance ·Reduced switching and conduction losses ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T

5.12. irfi4510g.pdf Size:245K _inchange_semiconductor

IRFI4019HG-117P
IRFI4019HG-117P

isc N-Channel MOSFET Transistor IRFI4510G,IIRFI4510G ·FEATURES ·Low drain-source on-resistance: RDS(on) ≤ 13.5mΩ (max) ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Device for use in a wide variety of applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBO

5.13. irfi4321.pdf Size:200K _inchange_semiconductor

IRFI4019HG-117P
IRFI4019HG-117P

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IRFI4321 ·FEATURES ·With TO-220F package ·Low input capacitance and gate charge ·Low gate input resistance ·Reduced switching and conduction losses ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T

5.14. irfi4229.pdf Size:201K _inchange_semiconductor

IRFI4019HG-117P
IRFI4019HG-117P

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IRFI4229 ·FEATURES ·With TO-220F package ·Low input capacitance and gate charge ·Low gate input resistance ·Reduced switching and conduction losses ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T

5.15. irfi4227.pdf Size:200K _inchange_semiconductor

IRFI4019HG-117P
IRFI4019HG-117P

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IRFI4227 ·FEATURES ·With TO-220F package ·Low input capacitance and gate charge ·Low gate input resistance ·Reduced switching and conduction losses ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T

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