IRFI4019HG-117P MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

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IRFI4019HG-117P Datasheet (PDF)

5.1. irfi4410zgpbf.pdf Size:228K _international_rectifier

PD - 96372 IRFI4410ZGPbF HEXFET® Power MOSFET Applications VDSS 100V l High Efficiency Synchronous Rectification in SMPS RDS(on) typ. 7.9m l Uninterruptible Power Supply l High Speed Power Switching max. 9.3m l Hard Switched and High Frequency Circuits ID 43A Benefits D D l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche

5.2. irfi4905.pdf Size:120K _international_rectifier

PD - 9.1526A IRFI4905 HEXFET� Power MOSFET Advanced Process Technology D Isolated Package VDSS = -55V High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm RDS(on) = 0.02? P-Channel G Fully Avalanche Rated ID = -41A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistan

 5.3. irfi4321pbf.pdf Size:285K _international_rectifier

PD - 97104 IRFI4321PbF HEXFET® Power MOSFET Applications l Motion Control Applications l High Efficiency Synchronous Rectification in SMPS VDSS 150V l Uninterruptible Power Supply RDS(on) typ. 12.2m: l Hard Switched and High Frequency Circuits max. 16m: Benefits l Low RDSON Reduces Losses ID 34A l Low Gate Charge Improves the Switching Performance D D l Improved Diode Recov

5.4. irfi4410zpbf.pdf Size:315K _international_rectifier

PD - 97475A IRFI4410ZPbF HEXFET® Power MOSFET Applications VDSS 100V l High Efficiency Synchronous Rectification in SMPS RDS(on) typ. 7.9m : l Uninterruptible Power Supply l High Speed Power Switching max. 9.3m : l Hard Switched and High Frequency Circuits ID 43A Benefits D D l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avala

 5.5. irfi4227pbf.pdf Size:290K _international_rectifier

PD - 97036B IRFI4227PbF PDP SWITCH Features Key Parameters l Advanced Process Technology VDS max 200 V l Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications VDS (Avalanche) typ. 240 V l Low EPULSE Rating to Reduce Power m RDS(ON) typ. @ 10V 21 Dissipation in PDP Sustain, Energy Recovery IRP max @ TC= 100°C 47 A and Pass Switch Applications

5.6. irfi4228pbf.pdf Size:302K _international_rectifier

PD - 97228 IRFI4228PbF PDP SWITCH Features Key Parameters l Advanced Process Technology VDS max 150 V l Key Parameters Optimized for PDP Sustain, VDS (Avalanche) typ. 180 V Energy Recovery and Pass Switch Applications l Low EPULSE Rating to Reduce Power RDS(ON) typ. @ 10V m: 12.2 Dissipation in PDP Sustain, Energy Recovery IRP max @ TC= 100°C 61 A and Pass Switch Applicatio

5.7. irfi460.pdf Size:211K _international_rectifier

5.8. irfi4229pbf.pdf Size:245K _international_rectifier

PD - 97201B IRFI4229PbF PDP SWITCH Features Key Parameters l Advanced Process Technology VDS max 250 V l Key Parameters Optimized for PDP Sustain, VDS (Avalanche) typ. 300 V Energy Recovery and Pass Switch Applications l Low EPULSE Rating to Reduce Power RDS(ON) typ. @ 10V m 38 Dissipation in PDP Sustain, Energy Recovery IRP max @ TC= 100°C 32 A and Pass Switch Applications

5.9. irfi4110gpbf.pdf Size:284K _international_rectifier

PD - 96347 IRFI4110GPbF Applications HEXFET® Power MOSFET l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply VDSS 100V l High Speed Power Switching RDS(on) typ. 3.7m Ω l Hard Switched and High Frequency Circuits max. 4.5mΩ ID (Silicon Limited) 72A Benefits l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness D D l Fully Characterized

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: SIZ710DT | SIZ704DT | SIZ702DT | SIZ342DT | SIZ340DT | SIZ300DT | SIX3439K | SISS40DN | SISS23DN | SISA18DN | SISA18ADN | SISA14DN | SISA12DN | SISA12ADN | SISA10DN |