IRF7329 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRF7329 📄📄
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 12 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 8 V
|Id|ⓘ - Corriente continua de drenaje: 9.2 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 8.6 nS
Cossⓘ - Capacitancia de salida: 1000 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.017 Ohm
Encapsulados: SO8
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IRF7329 datasheet
..1. Size:208K international rectifier
irf7329.pdf 
PD- 94095 IRF7329 HEXFET Power MOSFET Trench Technology ) VDSS RDS(on) max (m ) ID ) ) ) Ultra Low On-Resistance 17@VGS = -4.5V 9.2A Dual P-Channel MOSFET -12V 21@VGS = -2.5V 7.4A Low Profile (
..2. Size:173K international rectifier
irf7329pbf.pdf
PD - 95042 IRF7329PbF HEXFET Power MOSFET l Trench Technology VDSS RDS(on) max (mW) ID l Ultra Low On-Resistance 17@VGS = -4.5V 9.2A l Dual P-Channel MOSFET -12V 21@VGS = -2.5V 7.4A l Low Profile (
8.1. Size:188K international rectifier
irf7322d1pbf.pdf
PD - 95298 IRF7322D1PbF FETKY MOSFET / Schottky Diode l Co-packaged HEXFET Power MOSFET 1 8 and Schottky Diode K VDSS = -20V A l Ideal For Buck Regulator Applications 2 7 A K l P-Channel HEXFET RDS(on) = 0.058 3 6 S D l Low VF Schottky Rectifier 4 5 G D l Generation 5 Technology Schottky Vf = 0.39V l SO-8 Footprint Top View l Lead-Free Description The FETKY family
8.2. Size:225K international rectifier
irf7325.pdf
PD- 94094 IRF7325 HEXFET Power MOSFET Trench Technology ) VDSS RDS(on) max (m ) ID ) ) ) Ultra Low On-Resistance -12V 24@VGS = -4.5V 7.8A Dual P-Channel MOSFET 33@VGS = -2.5V 6.2A Low Profile (
8.3. Size:178K international rectifier
irf7321d2.pdf
PD- 91667C IRF7321D2 TM FETKY MOSFET & Schottky Diode Co-packaged HEXFET Power 1 8 A K MOSFET and Schottky Diode VDSS = -30V 2 7 Ideal For Buck Regulator Applications A K P-Channel HEXFET 3 6 RDS(on) = 0.062 S D Low VF Schottky Rectifier 4 5 G D Generation 5 Technology Schottky Vf = 0.52V SO-8 Footprint Top View Description The FETKYTM family of Co-package
8.4. Size:164K international rectifier
irf7324pbf.pdf
PD - 95460 IRF7324PbF HEXFET Power MOSFET Trench Technology Ultra Low On-Resistance 1 8 S1 D1 VDSS = -20V Dual P-Channel MOSFET 2 7 G1 D1 Low Profile (
8.5. Size:334K international rectifier
irf7326d2pbf.pdf
PD - 95311 IRF7326D2PbF Lead-Free www.irf.com 1 10/13/04 IRF7326D2PbF 2 www.irf.com IRF7326D2PbF www.irf.com 3 IRF7326D2PbF 4 www.irf.com IRF7326D2PbF www.irf.com 5 IRF7326D2PbF 6 www.irf.com IRF7326D2PbF SO-8 (Fetky) Package Outline INCHES MILLIMETERS DIM D B MIN MAX MIN MAX 5 A .0532 .0688 1.35 1.75 A A1 .0040 .0098 0.10 0.25 b .013 .020 0.33 0.51 8 7 6 5 c
8.6. Size:172K international rectifier
irf7322d1.pdf
PD- 91705A IRF7322D1 FETKY MOSFET / Schottky Diode Co-packaged HEXFET Power MOSFET 1 8 and Schottky Diode A K VDSS = -20V Ideal For Buck Regulator Applications 2 7 A K P-Channel HEXFET RDS(on) = 0.058 3 6 S D Low VF Schottky Rectifier 4 5 G D Generation 5 Technology Schottky Vf = 0.39V SO-8 Footprint Top View Description The FETKY family
8.7. Size:185K international rectifier
irf7324pbf-1.pdf
IRF7324TRPbF-1 HEXFET Power MOSFET VDS -20 V 1 8 RDS(on) max S1 D1 0.018 2 7 (@V = -4.5V) GS G1 D1 Qg (typical) 42 nC 3 6 S2 D2 ID 4 5 -9.0 A G2 D2 (@T = 25 C) A SO-8 Top View Features Benefits Industry-standard pinout SO-8 Package Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easier Manufacturing RoHS Compliant, Halogen-Free En
8.8. Size:99K international rectifier
irf7324.pdf
PD -93799A IRF7324 HEXFET Power MOSFET Trench Technology Ultra Low On-Resistance 1 8 S1 D1 VDSS = -20V Dual P-Channel MOSFET 2 7 G1 D1 Low Profile (
8.9. Size:108K international rectifier
irf7328.pdf
PD -94000 IRF7328 HEXFET Power MOSFET Trench Technology VDSS RDS(on) max ID Ultra Low On-Resistance -30V 21m @VGS = -10V -8.0A Dual P-Channel MOSFET 32m @VGS = -4.5V -6.8A Available in Tape & Reel Description 1 8 New trench HEXFET Power MOSFETs from S1 D1 International Rectifier utilize advanced processing 2 7 G1 D1 techniques to achieve extremely low on-resistance
8.10. Size:134K international rectifier
irf7324d1pbf.pdf
PD-95309A IRF7324D1PbF FETKY MOSFET / Schottky Diode l Co-packaged HEXFET Power 1 8 A K MOSFET and Schottky Diode VDSS = -20V 2 7 l Ideal for Mobile Phone Applications A K l Generation V Technology 3 6 S D RDS(on) = 0.27 l SO-8 Footprint 4 5 G D l Lead-Free Schottky Vf = 0.39V Top View Description The FETKYTM family of co-packaged HEXFETs and Schottky diodes offer
8.11. Size:116K international rectifier
irf7326d2.pdf
PD - 93763 IRF7326D2 FETKY MOSFET / Schottky Diode Co-packaged HEXFET Power MOSFET 1 8 and Schottky Diode A K VDSS = -30V Ideal For Buck Regulator Applications 2 7 A K P-Channel HEXFET RDS(on) = 0.10 3 6 S D Low VF Schottky Rectifier 4 5 G D Generation 5 Technology Schottky Vf = 0.52V SO-8 Footprint Top View Description The FETKY family o
8.12. Size:208K international rectifier
irf7321d2pbf.pdf
PD - 95297 IRF7321D2PbF TM FETKY MOSFET & Schottky Diode l Co-packaged HEXFET Power MOSFET and Schottky Diode 1 8 A K VDSS = -30V l Ideal For Buck Regulator Applications 2 7 A K l P-Channel HEXFET 3 6 RDS(on) = 0.062 l Low VF Schottky Rectifier S D l Generation 5 Technology 4 5 G D l SO-8 Footprint Schottky Vf = 0.52V l Lead-Free Top View Description The FETKYTM f
8.13. Size:210K international rectifier
irf7324d1.pdf
PD- 91789 IRF7324D1 PRELIMINARY FETKY MOSFET / Schottky Diode Co-packaged HEXFET Power 1 8 A K MOSFET and Schottky Diode VDSS = -20V 2 7 Ideal for Mobile Phone Applications A K Generation V Technology 3 6 S D RDS(on) = 0.18 SO-8 Footprint 4 5 G D Schottky Vf = 0.39V Top View Description The FETKYTM family of co-packaged HEXFETs and Schottk
8.14. Size:169K international rectifier
irf7328pbf.pdf
PD - 95196A IRF7328PbF HEXFET Power MOSFET Trench Technology VDSS RDS(on) max ID Ultra Low On-Resistance -30V 21m @VGS = -10V -8.0A Dual P-Channel MOSFET 32m @VGS = -4.5V -6.8A Available in Tape & Reel Lead-Free Description 1 8 New trench HEXFET Power MOSFETs from S1 D1 International Rectifier utilize advanced processing 2 7 G1 D1 techniques to achieve extremely low
8.16. Size:1183K cn vbsemi
irf7324tr.pdf
IRF7324TR www.VBsemi.tw Dual P-Channel 20V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.018 at VGS = - 4.5 V - 8.9 TrenchFET Power MOSFET 0.022 at VGS = - 2.5 V - 20 - 8.1 Advanced High Cell Density Process 0.030 at VGS = - 1.8 V - 3.6 Compliant to RoHS Directive 2002/95/EC APPLICATIONS
8.17. Size:909K cn vbsemi
irf7321d2trpbf.pdf
IRF7321D2TRPBF www.VBsemi.tw Dual P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)d, e Qg (Typ.) TrenchFET Power MOSFET 0.029 at VGS = - 10 V - 7.3 100 % UIS Tested RoHS - 30 17 nC COMPLIANT 0.039 at VGS = - 4.5 V - 6.3 APPLICATIONS Load Switches S1 S2 SO-8 S1 1 D1 8 G1 G2 G1 2 D1 7 S2 3 D2 6 G2 4 D2 5 T
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