All MOSFET. IRF7329 Datasheet

 

IRF7329 MOSFET. Datasheet pdf. Equivalent

Type Designator: IRF7329

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 2 W

Maximum Drain-Source Voltage |Vds|: 12 V

Maximum Gate-Source Voltage |Vgs|: 8 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 0.9 V

Maximum Drain Current |Id|: 9.2 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 38 nC

Rise Time (tr): 8.6 nS

Drain-Source Capacitance (Cd): 1000 pF

Maximum Drain-Source On-State Resistance (Rds): 0.017 Ohm

Package: SO8

IRF7329 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRF7329 Datasheet (PDF)

0.1. irf7329.pdf Size:208K _international_rectifier

IRF7329
IRF7329

PD- 94095 IRF7329 HEXFET® Power MOSFET Trench Technology Ω) VDSS RDS(on) max (mΩ) ID Ω) Ω) Ω) Ultra Low On-Resistance 17@VGS = -4.5V ±9.2A Dual P-Channel MOSFET -12V 21@VGS = -2.5V ±7.4A Low Profile (<1.8mm) 30@VGS = -1.8V ±4.6A Available in Tape & Reel Description New P-Channel HEXFET power MOSFETs from International Rectifier utilize advanced processing

8.1. irf730 irf731 irf732 irf733-fi.pdf Size:486K _st

IRF7329
IRF7329



8.2. irf7321d2.pdf Size:178K _international_rectifier

IRF7329
IRF7329

PD- 91667C IRF7321D2 TM FETKY MOSFET & Schottky Diode Co-packaged HEXFET Power 1 8 A K MOSFET and Schottky Diode VDSS = -30V 2 7 Ideal For Buck Regulator Applications A K P-Channel HEXFET 3 6 RDS(on) = 0.062Ω S D Low VF Schottky Rectifier 4 5 G D Generation 5 Technology Schottky Vf = 0.52V SO-8 Footprint Top View Description The FETKYTM family of Co-package

 8.3. irf7324d1.pdf Size:210K _international_rectifier

IRF7329
IRF7329

PD- 91789 IRF7324D1 PRELIMINARY     FETKY MOSFET / Schottky Diode Co-packaged HEXFET Power 1 8 A K MOSFET and Schottky Diode VDSS = -20V 2 7 Ideal for Mobile Phone Applications A K Generation V Technology 3 6 S D RDS(on) = 0.18Ω SO-8 Footprint 4 5 G D Schottky Vf = 0.39V Top View Description The FETKYTM family of co-packaged HEXFETs and Schottk

8.4. irf7325.pdf Size:225K _international_rectifier

IRF7329
IRF7329

PD- 94094 IRF7325 HEXFET® Power MOSFET Trench Technology Ω) VDSS RDS(on) max (mΩ) ID Ω) Ω) Ω) Ultra Low On-Resistance -12V 24@VGS = -4.5V ±7.8A Dual P-Channel MOSFET 33@VGS = -2.5V ±6.2A Low Profile (<1.8mm) 49@VGS = -1.8V ±3.9A Available in Tape & Reel Description New P-Channel HEXFET power MOSFETs from International Rectifier utilize advanced processin

 8.5. irf7324.pdf Size:99K _international_rectifier

IRF7329
IRF7329

PD -93799A IRF7324 HEXFET® Power MOSFET Trench Technology Ultra Low On-Resistance 1 8 S1 D1 VDSS = -20V Dual P-Channel MOSFET 2 7 G1 D1 Low Profile (<1.1mm) 3 6 S2 D2 Available in Tape & Reel 4 5 2.5V Rated G2 D2 RDS(on) = 0.018Ω Top View Description New trench HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve ext

8.6. irf7322d1pbf.pdf Size:188K _international_rectifier

IRF7329
IRF7329

PD - 95298 IRF7322D1PbF FETKYä MOSFET / Schottky Diode l Co-packaged HEXFET® Power MOSFET 1 8 and Schottky Diode K VDSS = -20V A l Ideal For Buck Regulator Applications 2 7 A K l P-Channel HEXFET RDS(on) = 0.058Ω 3 6 S D l Low VF Schottky Rectifier 4 5 G D l Generation 5 Technology Schottky Vf = 0.39V l SO-8 Footprint Top View l Lead-Free Description The FETKY family

8.7. irf7326d2.pdf Size:116K _international_rectifier

IRF7329
IRF7329

PD - 93763 IRF7326D2     FETKY MOSFET / Schottky Diode Co-packaged HEXFET® Power MOSFET 1 8 and Schottky Diode A K VDSS = -30V Ideal For Buck Regulator Applications 2 7 A K P-Channel HEXFET RDS(on) = 0.10Ω 3 6 S D Low VF Schottky Rectifier 4 5 G D Generation 5 Technology Schottky Vf = 0.52V SO-8 Footprint Top View Description The FETKY family o

8.8. irf7328.pdf Size:108K _international_rectifier

IRF7329
IRF7329

PD -94000 IRF7328 HEXFET® Power MOSFET Trench Technology VDSS RDS(on) max ID Ultra Low On-Resistance -30V 21mΩ@VGS = -10V -8.0A Dual P-Channel MOSFET 32mΩ@VGS = -4.5V -6.8A Available in Tape & Reel Description 1 8 New trench HEXFET® Power MOSFETs from S1 D1 International Rectifier utilize advanced processing 2 7 G1 D1 techniques to achieve extremely low on-resistance

8.9. irf7324d1pbf.pdf Size:134K _international_rectifier

IRF7329
IRF7329

PD-95309A IRF7324D1PbF FETKYä MOSFET / Schottky Diode l Co-packaged HEXFET® Power 1 8 A K MOSFET and Schottky Diode VDSS = -20V 2 7 l Ideal for Mobile Phone Applications A K l Generation V Technology 3 6 S D RDS(on) = 0.27Ω l SO-8 Footprint 4 5 G D l Lead-Free Schottky Vf = 0.39V Top View Description The FETKYTM family of co-packaged HEXFETs and Schottky diodes offer

8.10. irf7324pbf-1.pdf Size:185K _international_rectifier

IRF7329
IRF7329

IRF7324TRPbF-1 HEXFET® Power MOSFET VDS -20 V 1 8 RDS(on) max S1 D1 0.018 Ω 2 7 (@V = -4.5V) GS G1 D1 Qg (typical) 42 nC 3 6 S2 D2 ID 4 5 -9.0 A G2 D2 (@T = 25°C) A SO-8 Top View Features Benefits Industry-standard pinout SO-8 Package Multi-Vendor Compatibility ⇒ Compatible with Existing Surface Mount Techniques Easier Manufacturing RoHS Compliant, Halogen-Free En

8.11. irf7321d2pbf.pdf Size:208K _international_rectifier

IRF7329
IRF7329

PD - 95297 IRF7321D2PbF TM FETKY MOSFET & Schottky Diode l Co-packaged HEXFET® Power MOSFET and Schottky Diode 1 8 A K VDSS = -30V l Ideal For Buck Regulator Applications 2 7 A K l P-Channel HEXFET® 3 6 RDS(on) = 0.062Ω l Low VF Schottky Rectifier S D l Generation 5 Technology 4 5 G D l SO-8 Footprint Schottky Vf = 0.52V l Lead-Free Top View Description The FETKYTM f

8.12. irf7326d2pbf.pdf Size:334K _international_rectifier

IRF7329
IRF7329

PD - 95311 IRF7326D2PbF • Lead-Free www.irf.com 1 10/13/04 IRF7326D2PbF 2 www.irf.com IRF7326D2PbF www.irf.com 3 IRF7326D2PbF 4 www.irf.com IRF7326D2PbF www.irf.com 5 IRF7326D2PbF 6 www.irf.com IRF7326D2PbF SO-8 (Fetky) Package Outline INCHES MILLIMETERS DIM D B MIN MAX MIN MAX 5 A .0532 .0688 1.35 1.75 A A1 .0040 .0098 0.10 0.25 b .013 .020 0.33 0.51 8 7 6 5 c

8.13. irf7322d1.pdf Size:172K _international_rectifier

IRF7329
IRF7329

PD- 91705A IRF7322D1     FETKY MOSFET / Schottky Diode Co-packaged HEXFET® Power MOSFET 1 8 and Schottky Diode A K VDSS = -20V Ideal For Buck Regulator Applications 2 7 A K P-Channel HEXFET RDS(on) = 0.058Ω 3 6 S D Low VF Schottky Rectifier 4 5 G D Generation 5 Technology Schottky Vf = 0.39V SO-8 Footprint Top View Description The FETKY family

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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