IRFHS9351 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IRFHS9351
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.4 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 2.3 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.4 V
   Qgⓘ - Carga de la puerta: 3.7 nC
   trⓘ - Tiempo de subida: 30 nS
   Cossⓘ - Capacitancia de salida: 39 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.17 Ohm
   Paquete / Cubierta: PQFN2X2

Búsqueda de reemplazo de MOSFET IRFHS9351

IRFHS9351 Datasheet (PDF)

..1. Size:331K international rectifier
irfhs9351pbf.pdf

PD - 97572BIRFHS9351PbFHEXFET Power MOSFETVDS-30 V TOP VIEWVGS max 20 VD1RDS(on) max S1 1 6 D1G2170 m(@VGS = -10V) S2 D1D1D2FET1G1 25 G2ID -3.4 AS1(@TC = 25C)G1D2D2 3 4 S2D2FET22mm x 2mm Dual PQFNApplicationsl Charge and Discharge Switch for Battery Applicationl System/load switchFeatures and BenefitsFeatures BenefitsLow

..2. Size:276K infineon
irfhs9351pbf.pdf

IRFHS9351PbFHEXFET Power MOSFETVDS-30 V TOP VIEWVGS max 20 VD1RDS(on) max S1 1 6 D1G2170 m(@VGS = -10V) S2 D1D1D2FET1G1 25 G2ID -3.4 AS1(@TC = 25C)G1D2D2 3 4 S2D2FET22mm x 2mm Dual PQFNApplicationsl Charge and Discharge Switch for Battery Applicationl System/load switchFeatures and BenefitsFeatures BenefitsLow RDSon ( 17

7.1. Size:323K international rectifier
irfhs9301pbf.pdf

PD - 97581AIRFHS9301PbFHEXFET Power MOSFETVDS TOP VIEW-30 VVGS max 20 VDRDS(on) max D 1 6 DD37 mGD(@VGS = -10V)D 2D 5 DQg (typical)13 nCDDSSID SG 3 4 S-8.5 A2mm x 2mm PQFN(@TC = 25C)Applicationsl Charge and Discharge Switch for Battery Applicationl System/load switchFeatures and BenefitsFeatures BenefitsLow RDSon ( 37m

9.1. Size:213K international rectifier
irfhs8342pbf.pdf

PD - 97596BIRFHS8342PbFHEXFET Power MOSFETVDS30 V TOP VIEWVGS max20 VDD 1 6 DRDS(on) max D16.0 mGD(@VGS = 10V)D 2D 5 DQg(typical) D4.2 nCD(@VGS = 4.5V)SSG 3 4 S SID 2mm x 2mm PQFN8.5 A(@Tc(Bottom) = 25C)Applications Control MOSFET for Buck Converters System/Load SwitchFeatures and BenefitsFeatures Resulting Benefits

9.2. Size:266K international rectifier
irfhs8242pbf.pdf

PD - 96337AIRFHS8242PbFHEXFET Power MOSFETVDS25 VTOP VIEWVGS max20 VDRDS(on) max D 1 6 DD13.0 mG(@VGS = 10V)DD 2 D 5 DQg (typical) 4.3 nCDSG 3 4 SD( @ VGS = 4.5V) SSID 2mm x 2mm PQFN8.5 A(@Tc(Bottom) = 25C)Applications System/Load SwitchFeatures and BenefitsFeatures Resulting BenefitsLow RDSon ( 13.0m) Lower Condu

9.3. Size:231K infineon
irfhs8242pbf.pdf

IRFHS8242PbFHEXFET Power MOSFETVDS25 VTOP VIEWVGS max20 VDRDS(on) max D 1 6 DD13.0 mG(@VGS = 10V)DD 2 D 5 DQg (typical) 4.3 nCDSG 3 4 SD( @ VGS = 4.5V) SSID 2mm x 2mm PQFN8.5 A(@Tc(Bottom) = 25C)Applications System/Load SwitchFeatures and BenefitsFeatures Resulting BenefitsLow RDSon ( 13.0m) Lower Conduction LossesL

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