IRFHS9351 Todos los transistores

 

IRFHS9351 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRFHS9351

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 1.4 W

Tensión drenaje-fuente (Vds): 30 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 2.3 A

CARACTERÍSTICAS ELÉCTRICAS

Resistencia drenaje-fuente RDS(on): 0.29 Ohm

Empaquetado / Estuche: PQFN2X2

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IRFHS9351 Datasheet (PDF)

1.1. irfhs9351pbf.pdf Size:331K _upd-mosfet

IRFHS9351
IRFHS9351

PD - 97572B IRFHS9351PbF HEXFET® Power MOSFET VDS -30 V TOP VIEW VGS max ±20 V D1 RDS(on) max S1 1 6 D1 G2 170 mΩ (@VGS = -10V) S2 D1 D1 D2 FET1 G1 2 5 G2 ID -3.4 A S1 (@TC = 25°C) G1 D2 D2 3 4 S2 D2 FET2 2mm x 2mm Dual PQFN Applications l Charge and Discharge Switch for Battery Application l System/load switch Features and Benefits Features Benefits Low

3.1. irfhs9301pbf.pdf Size:323K _upd-mosfet

IRFHS9351
IRFHS9351

PD - 97581A IRFHS9301PbF HEXFET® Power MOSFET VDS TOP VIEW -30 V VGS max ±20 V D RDS(on) max D 1 6 D D 37 mΩ G D (@VGS = -10V) D 2 D 5 D Qg (typical) 13 nC D D S S ID S G 3 4 S -8.5 A 2mm x 2mm PQFN (@TC = 25°C) Applications l Charge and Discharge Switch for Battery Application l System/load switch Features and Benefits Features Benefits Low RDSon (≤ 37mΩ

 5.1. irfhs8242pbf.pdf Size:266K _upd-mosfet

IRFHS9351
IRFHS9351

PD - 96337A IRFHS8242PbF HEXFET® Power MOSFET VDS 25 V TOP VIEW VGS max 20 ± V D RDS(on) max D 1 6 D D 13.0 mΩ G (@VGS = 10V) D D 2 D 5 D Qg (typical) 4.3 nC D S G 3 4 S D ( @ VGS = 4.5V) S S ID 2mm x 2mm PQFN 8.5 A (@Tc(Bottom) = 25°C) Applications • System/Load Switch Features and Benefits Features Resulting Benefits Low RDSon (≤ 13.0mΩ) Lower Condu

5.2. irfhs8342pbf.pdf Size:213K _upd-mosfet

IRFHS9351
IRFHS9351

PD - 97596B IRFHS8342PbF HEXFET® Power MOSFET VDS 30 V TOP VIEW VGS max ±20 V D D 1 6 D RDS(on) max D 16.0 mΩ G D (@VGS = 10V) D 2 D 5 D Qg(typical) D 4.2 nC D (@VGS = 4.5V) S S G 3 4 S S ID 2mm x 2mm PQFN 8.5 A (@Tc(Bottom) = 25°C) Applications • Control MOSFET for Buck Converters • System/Load Switch Features and Benefits Features Resulting Benefits

 5.3. irfhs8242pbf.pdf Size:250K _international_rectifier

IRFHS9351
IRFHS9351

IRFHS8242PbF HEXFET® Power MOSFET VDS 25 V TOP VIEW VGS max 20 ± V D RDS(on) max D 1 6 D D 13.0 mΩ G (@VGS = 10V) D D 2 D 5 D Qg (typical) 4.3 nC D S G 3 4 S D ( @ VGS = 4.5V) S S ID 2mm x 2mm PQFN 8.5 A (@Tc(Bottom) = 25°C) Applications • System/Load Switch Features and Benefits Features Resulting Benefits Low RDSon (≤ 13.0mΩ) Lower Conduction Losses L

5.4. irfhs8342pbf.pdf Size:249K _international_rectifier

IRFHS9351
IRFHS9351

IRFHS8342PbF HEXFET® Power MOSFET VDS 30 V TOP VIEW VGS max ±20 V D D 1 6 D RDS(on) max D 16.0 mΩ G D (@VGS = 10V) D 2 D 5 D Qg(typical) D 4.2 nC D (@VGS = 4.5V) S S G 3 4 S S ID 2mm x 2mm PQFN 8.5 A (@Tc(Bottom) = 25°C) Applications • Control MOSFET for Buck Converters • System/Load Switch Features and Benefits Features Resulting Benefits Low RDSon (

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