IRF7509 Todos los transistores

 

IRF7509 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRF7509

Tipo de FET: MOSFET

Polaridad de transistor: NP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 1.25 W

Tensión drenaje-fuente (Vds): 30 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 2.4 A

CARACTERÍSTICAS ELÉCTRICAS

Resistencia drenaje-fuente RDS(on): 0.11 Ohm

Empaquetado / Estuche: MICRO8

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IRF7509 Datasheet (PDF)

1.1. irf7509pbf-1.pdf Size:237K _upd-mosfet

IRF7509
IRF7509

IRF7509PbF-1 HEXFET® Power MOSFET N-CH P-CH N-CHANNEL MOSFET 1 8 VDS 30 -30 V S1 D1 2 7 RDS(on) max G1 D1 0.11 0.2 Ω (@V = 10V) GS 3 6 S2 D2 Qg (typical) 7.8 7.5 nC 4 5 G2 D2 ID 2.7 -2.0 A P-CHANNEL MOSFET (@T = 25°C) A Micro8 Top View Features Benefits Industry-standard pinout Micro-8 Package Multi-Vendor Compatibility ⇒ Compatible with Existing Surface Mount

1.2. irf7509.pdf Size:217K _international_rectifier

IRF7509
IRF7509

PD - 91270J IRF7509 HEXFET® Power MOSFET Generation V Technology N-CHANNEL MOSFET 1 8 Ultra Low On-Resistance S1 D1 N-Ch P-Ch Dual N and P Channel MOSFET 2 7 G1 D1 Very Small SOIC Package 3 6 VDSS 30V -30V S2 D2 Low Profile (<1.1mm) 4 5 Available in Tape & Reel G2 D2 P-CHANNEL MOSFET Fast Switching RDS(on) 0.11Ω 0.20Ω Top View Description Fifth Generation HEX

 1.3. irf7509pbf-1.pdf Size:237K _international_rectifier

IRF7509
IRF7509

IRF7509PbF-1 HEXFET® Power MOSFET N-CH P-CH N-CHANNEL MOSFET 1 8 VDS 30 -30 V S1 D1 2 7 RDS(on) max G1 D1 0.11 0.2 Ω (@V = 10V) GS 3 6 S2 D2 Qg (typical) 7.8 7.5 nC 4 5 G2 D2 ID 2.7 -2.0 A P-CHANNEL MOSFET (@T = 25°C) A Micro8 Top View Features Benefits Industry-standard pinout Micro-8 Package Multi-Vendor Compatibility ⇒ Compatible with Existing Surface Mount

Otros transistores... IRF9395M , IRF7314 , IRF7504 , IRF7751G , IRF7506 , IRF7316 , IRF7328 , IRF7754G , BUK455-200A , IRF7309 , IRF7105 , IRF7307 , IRF7105Q , IRF7389 , IRF7343I , IRF7343Q , IRF7309I .

 

 
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