IRF7509 - Даташиты. Аналоги. Основные параметры

PD - 91270J IRF7509 HEXFET Power MOSFET Generation V Technology N-CHANNEL MOSFET 1 8 Ultra Low On-Resistance S1 D1 N-Ch P-Ch Dual N and P Channel MOSFET 2 7 G1 D1 Very Small SOIC Package 3 6 VDSS 30V -30V S2 D2 Low Profile (

PD - 95397 IRF7509PbF HEXFET Power MOSFET l Generation V Technology N-CHANNEL MOSFET 1 8 l Ultra Low On-Resistance S1 D1 N-Ch P-Ch l Dual N and P Channel MOSFET 2 7 G1 D1 l Very Small SOIC Package 3 6 VDSS 30V -30V S2 D2 l Low Profile (

IRF7509PbF-1 HEXFET Power MOSFET N-CH P-CH N-CHANNEL MOSFET 1 8 VDS 30 -30 V S1 D1 2 7 RDS(on) max G1 D1 0.11 0.2 (@V = 10V) GS 3 6 S2 D2 Qg (typical) 7.8 7.5 nC 4 5 G2 D2 ID 2.7 -2.0 A P-CHANNEL MOSFET (@T = 25 C) A Micro8 Top View Features Benefits Industry-standard pinout Micro-8 Package Multi-Vendor Compatibility Compatible with Existing Surface Mount

PD - 95218 IRF7507PbF HEXFET Power MOSFET l Generation V Technology N-CHANNEL MOSFET 1 8 l Ultra Low On-Resistance S1 D1 N-Ch P-Ch l Dual N and P Channel MOSFET 2 7 G1 D1 l Very Small SOIC Package 3 6 VDSS 20V -20V S2 D2 l Low Profile (

PD - 9.1267G IRF7504 HEXFET Power MOSFET Generation V Technology 1 8 Ultra Low On-Resistance S1 D1 Dual P-Channel MOSFET VDSS = -20V 2 7 G1 D1 Very Small SOIC Package 3 6 S2 D2 Low Profile (

PD - 91269I IRF7507 HEXFET Power MOSFET Generation V Technology N-CHANNEL MOSFET 1 8 Ultra Low On-Resistance S1 D1 N-Ch P-Ch Dual N and P Channel MOSFET 2 7 G1 D1 Very Small SOIC Package 3 6 VDSS 20V -20V S2 D2 Low Profile (

PD- 95346 IRF7503PbF Lead-Free www.irf.com 1 02/22/05 IRF7503PbF 2 www.irf.com IRF7503PbF www.irf.com 3 IRF7503PbF 4 www.irf.com IRF7503PbF www.irf.com 5 IRF7503PbF 6 www.irf.com IRF7503PbF Micro8 Package Outline Dimensions are shown in milimeters (inches) LEAD ASSIGNMENTS INCHES MILLIMETERS D DIM MIN MAX MIN MAX 3 - B - D D D D D1 D1 D2 D2 A .036 .044 0.91

PD - 91265H IRF7501 PRELIMINARY HEXFET Power MOSFET Generation V Technology 1 8 S1 D1 Ulrtra Low On-Resistance VDSS =20V 2 7 Dual N-Channel MOSFET G1 D1 Very Small SOIC Package 3 6 S2 D2 Low Profile (

PD - 9.1266G IRF7503 HEXFET Power MOSFET Generation V Technology 1 8 Ultra Low On-Resistance S1 D1 Dual N-Channel MOSFET VDSS = 30V 2 7 G1 D1 Very Small SOIC Package 3 6 S2 Low Profile (

PD - 95696 IRF7506PbF Lead-Free www.irf.com 9/2/04 IRF7506PbF 2 www.irf.com IRF7506PbF www.irf.com 3 IRF7506PbF 4 www.irf.com IRF7506PbF www.irf.com 5 IRF7506PbF 6 www.irf.com IRF7506PbF Micro8 Package Outline LEAD ASSIGNMENTS INCHES MILLIMETERS DIM D MIN MAX MIN MAX 3 - B - D D D D D1 D1 D2 D2 A .036 .044 0.91 1.11 A1 .004 .008 0.10 0.20 8 7 6 5 8 7 6 5 B

PD- 95912 IRF7504PbF Lead-Free www.irf.com 1 2/22/05 IRF7504PbF 2 www.irf.com IRF7504PbF www.irf.com 3 IRF7504PbF 4 www.irf.com IRF7504PbF www.irf.com 5 IRF7504PbF 6 www.irf.com IRF7504PbF Micro8 Package Outline Dimensions are shown in milimeters (inches) LEAD ASSIGNMENTS INCHES MILLIMETERS DIM D MIN MAX MIN MAX 3 - B - D D D D D1 D1 D2 D2 A .036 .044 0.91

PD - 9.1268F IRF7506 HEXFET Power MOSFET Generation V Technology 1 8 Ultra Low On-Resistance S1 D1 VDSS = -30V Dual P-Channel MOSFET 2 7 G1 D1 Very Small SOIC Package 3 6 S2 D2 Low Profile (

Advanced Power MOSFET FEATURES BVDSS = 400 V Avalanche Rugged Technology RDS(on) = 0.3 Rugged Gate Oxide Technology Lower Input Capacitance ID = 15 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 400V Low RDS(ON) 0.254 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value