IRF7389 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IRF7389
   Tipo de FET: MOSFET
   Polaridad de transistor: NP

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 7.3 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1 V
   Qgⓘ - Carga de la puerta: 22 nC
   trⓘ - Tiempo de subida: 8.9 nS
   Cossⓘ - Capacitancia de salida: 320 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.029 Ohm
   Paquete / Cubierta: SO8

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IRF7389 Datasheet (PDF)

..1. Size:165K international rectifier
irf7389.pdf

PD - 91645IRF7389PRELIMINARYHEXFET Power MOSFET Generation V TechnologyN-CHANNEL MOSFETN-Ch P-Ch1 8 Ultra Low On-Resistance S1 D1 Complimentary Half Bridge 2 7G1 D1VDSS 30V -30V Surface Mount3 6S2 D2 Fully Avalanche Rated45G2 D2P-CHANNEL MOSFETRDS(on) 0.029 0.058Top ViewDescriptionFifth Generation HEXFETs from International Rectifierutiliz

..2. Size:259K infineon
irf7389pbf.pdf

PD - 95462IRF7389PbFHEXFET Power MOSFETl Generation V TechnologyN-CHANNEL MOSFETN-Ch P-Ch1 8l Ultra Low On-Resistance S1 D1l Complimentary Half Bridge 2 7G1 D1VDSS 30V -30Vl Surface Mount3 6S2 D2l Fully Avalanche Rated45G2 D2l Lead-FreeP-CHANNEL MOSFETRDS(on) 0.029 0.058Top ViewDescriptionFifth Generation HEXFETs from International Rectifier

0.1. Size:258K international rectifier
irf7389pbf-1.pdf

IRF7389PbF-1HEXFET Power MOSFETN-CH P-CHN-CHANNEL MOSFETVDS 30 -30 V 1 8S1 D1RDS(on) max 2 7G1 D10.029 0.058 (@V = 10V)GS3 6S2 D2Qg (typical) 22 23 nC45G2 D2ID 7.3 -5.3 A P-CHANNEL MOSFETSO-8(@T = 25C)ATop ViewFeatures BenefitsIndustry-standard pinout SO-8 Package Multi-Vendor CompatibilityCompatible with Existing Surface Mount Tech

8.1. Size:200K international rectifier
irf7380qpbf.pdf

PD - 96132BIRF7380QPbFHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-ResistanceVDSS RDS(on) max IDl N Channel MOSFET73m @VGS = 10Vl Surface Mount 80V 2.2Al Available in Tape & Reell 150C Operating Temperaturel Lead-Free1 8S1 D12 7Description G1 D1Additional features of These HEXFET Power3 6S2 D2MOSFET's are a 150C junction operating4

8.2. Size:205K international rectifier
irf7380pbf-1.pdf

IRF7380TRPbF-1HEXFET Power MOSFETVDS 80 V1 8S1 D1RDS(on) max 2 773 mG1 D1(@V = 10V)GS3 6S2 D2Qg (typical) 15 nC4 5ID G2 D23.6 A(@T = 25C)ATop View SO-8Applicationsl High frequency DC-DC convertersFeatures BenefitsIndustry-standard pinout SO-8 Package Multi-Vendor CompatibilityCompatible with Existing Surface Mount Techniques Easier Ma

8.3. Size:226K infineon
irf7380pbf.pdf

IRF7380PbFHEXFET Power MOSFETVDSS RDS(on) max IDApplicationsl High frequency DC-DC converters80V 73m @VGS = 10V 3.6Al Lead-FreeBenefits1 8S1 D1l Low Gate to Drain Charge to Reduce2 7G1 D1Switching Losses3 6l Fully Characterized Capacitance IncludingS2 D2Effective COSS to Simplify Design, (See 45G2 D2App. Note AN1001)l Fully Characterized Avalanche Vol

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