AUIRF9952Q Todos los transistores

 

AUIRF9952Q MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AUIRF9952Q

Tipo de FET: MOSFET

Polaridad de transistor: NP

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 3.5 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 8.8 nS

Cossⓘ - Capacitancia de salida: 120 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.1 Ohm

Encapsulados: SO8

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AUIRF9952Q datasheet

 ..1. Size:324K  1
auirf9952q.pdf pdf_icon

AUIRF9952Q

AUTOMOTIVE GRADE AUIRF9952Q Features N-CHANNEL MOSFET Advanced Planar Technology N-CH P-CH 1 8 S1 D1 Low On-Resistance 2 7 G1 D1 Logic Level Gate Drive VDSS 30V -30V 3 6 S2 D2 Dual N and P Channel MOSFET 4 5 G2 D2 RDS(on) max. 0.10 0.25 Dynamic dv/dt Rating P-CHANNEL MOSFET 150 C Operating Temperature Top View ID 3.5A -2.3A

 8.1. Size:823K  international rectifier
auirf9540n.pdf pdf_icon

AUIRF9952Q

PD - 97626 AUTOMOTIVE GRADE AUIRF9540N Features l Advanced Planar Technology D l Dynamic dV/dT Rating V(BR)DSS -100V l 175 C Operating Temperature l Fast Switching RDS(on) max. 0.117 G l Fully Avalanche Rated l Repetitive Avalanche Allowed ID -23A S up to Tjmax l Lead-Free, RoHS Compliant l Automotive Qualified* D Description S Specifically designed for Automotive ap

 8.2. Size:241K  international rectifier
auirf9z34n.pdf pdf_icon

AUIRF9952Q

PD - 97627A AUTOMOTIVE GRADE AUIRF9Z34N Features HEXFET Power MOSFET l Advanced Planar Technology l P-Channel MOSFET D V(BR)DSS -55V l Dynamic dV/dT Rating l 175 C Operating Temperature RDS(on) max. 0.10 l Fast Switching G l Fully Avalanche Rated ID S -19A l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant l Automotive Qualified* D Description S

 9.1. Size:403K  1
auirf7341q.pdf pdf_icon

AUIRF9952Q

AUTOMOTIVE GRADE AUIRF7341Q VDSS Features 1 8 55V S1 D1 Advanced Planar Technology 2 7 G1 D1 RDS(on) typ. 0.043 3 6 Ultra Low On-Resistance S2 D2 4 5 max. Logic Level Gate Drive G2 D2 0.050 Dual N Channel MOSFET Top View ID 5.1A Surface Mount Available in Tape & Reel 175 C Operating Temperature Lead-Free, RoHS Co

Otros transistores... AUIRF7342Q , AUIRF7303Q , AUIRF7103Q , AUIRF7304Q , AUIRF7379Q , AUIRF7341Q , AUIRF7309Q , AUIRF7343Q , IRF1404 , 2SJ168 , 2SJ305 , 2SJ343 , 2SJ344 , 2SJ345 , 2SJ346 , 2SJ347 , 2SJ360 .

History: IRF3205LPBF | LXP152ALT1G | 2SK3857CT | 30P06 | NTD4904N

 

 

 

 

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