2SJ668
MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SJ668
Código: J668
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 20
W
|Vds|ⓘ - Voltaje máximo drenador - fuente: 60
V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20
V
|Id|ⓘ - Corriente continua de drenaje: 5
A
Tjⓘ - Temperatura máxima de unión: 150
°C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2
V
Qgⓘ - Carga de la puerta: 15
nC
trⓘ - Tiempo de subida: 14
nS
Cossⓘ - Capacitancia
de salida: 90
pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.17
Ohm
Paquete / Cubierta: NEW
PWMOLD
Búsqueda de reemplazo de MOSFET 2SJ668
2SJ668
Datasheet (PDF)
..1. Size:204K toshiba
2sj668.pdf 
2SJ668 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOSIII) 2SJ668 Relay Drive, DC/DC Converter and Motor Drive Unit: mmApplications 4 V gate drive Low drain-source ON-resistance: RDS (ON) = 0.12 (typ.) High forward transfer admittance: |Yfs| = 5.0 S (typ.) Low leakage current: IDSS = -100 A (max) (VDS = -60 V) Enhancement mode: Vth = -0.8 t
9.1. Size:209K toshiba
2sj669.pdf
2SJ669 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOS III) 2SJ669 Relay Drive, DC/DC Converter and Motor Drive Unit: mmApplications 4-V gate drive Low drain-source ON-resistance: RDS (ON) = 0.12 (typ.) High forward transfer admittance: |Yfs| = 5.0 S (typ.) Low leakage current: IDSS = -100 A (max) (VDS = -60 V) Enhancement mode: Vth = -0.8
9.2. Size:38K sanyo
2sj665.pdf
Ordering number : EN8590 2SJ665P-Channel Silicon MOSFETGeneral-Purpose Switching Device2SJ665ApplicationsFeatures Low ON-resistance. Ultrahigh-speed switching. 4V drive. Motor drive, DC / DC converter. Avalanche resistance guarantee.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --
9.3. Size:38K sanyo
2sj661.pdf
Ordering number : EN8586 2SJ661P-Channel Silicon MOSFETGeneral-Purpose Switching Device2SJ661ApplicationsFeatures Low ON-resistance. Ultrahigh-speed switching. 4V drive. Motor drive, DC / DC converter. Avalanche resistance guarantee.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --
9.4. Size:373K onsemi
2sj661.pdf
Ordering number : EN8586A2SJ661P-Channel Power MOSFEThttp://onsemi.com 60V, 38A, 39m , TO-262-3L/TO-263-2LFeatures ON-resistance RDS(on)1=29.5m (typ.) Input capacitance Ciss=4360pF (typ.) 4V driveSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --60 VGate-to-Source Voltage
9.5. Size:283K onsemi
2sj661-1e.pdf
Ordering number : EN8586A2SJ661P-Channel Power MOSFEThttp://onsemi.com 60V, 38A, 39m , TO-262-3L/TO-263-2LFeatures ON-resistance RDS(on)1=29.5m (typ.) Input capacitance Ciss=4360pF (typ.) 4V driveSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --60 VGate-to-Source Voltage
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