2SJ668 Todos los transistores

 

2SJ668 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SJ668
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 20 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 14 nS
   Cossⓘ - Capacitancia de salida: 90 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.17 Ohm
   Paquete / Cubierta: NEW PWMOLD
 

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2SJ668 Datasheet (PDF)

 ..1. Size:204K  toshiba
 2sj668.pdf pdf_icon

2SJ668

2SJ668 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOSIII) 2SJ668 Relay Drive, DC/DC Converter and Motor Drive Unit: mmApplications 4 V gate drive Low drain-source ON-resistance: RDS (ON) = 0.12 (typ.) High forward transfer admittance: |Yfs| = 5.0 S (typ.) Low leakage current: IDSS = -100 A (max) (VDS = -60 V) Enhancement mode: Vth = -0.8 t

 9.1. Size:209K  toshiba
 2sj669.pdf pdf_icon

2SJ668

2SJ669 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOS III) 2SJ669 Relay Drive, DC/DC Converter and Motor Drive Unit: mmApplications 4-V gate drive Low drain-source ON-resistance: RDS (ON) = 0.12 (typ.) High forward transfer admittance: |Yfs| = 5.0 S (typ.) Low leakage current: IDSS = -100 A (max) (VDS = -60 V) Enhancement mode: Vth = -0.8

 9.2. Size:38K  sanyo
 2sj665.pdf pdf_icon

2SJ668

Ordering number : EN8590 2SJ665P-Channel Silicon MOSFETGeneral-Purpose Switching Device2SJ665ApplicationsFeatures Low ON-resistance. Ultrahigh-speed switching. 4V drive. Motor drive, DC / DC converter. Avalanche resistance guarantee.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --

 9.3. Size:38K  sanyo
 2sj661.pdf pdf_icon

2SJ668

Ordering number : EN8586 2SJ661P-Channel Silicon MOSFETGeneral-Purpose Switching Device2SJ661ApplicationsFeatures Low ON-resistance. Ultrahigh-speed switching. 4V drive. Motor drive, DC / DC converter. Avalanche resistance guarantee.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --

MOSTRAR MÁS

Otros transistores... 2SJ346 , 2SJ347 , 2SJ360 , 2SJ465 , 2SJ511 , 2SJ537 , 2SJ567 , 2SJ610 , STP75NF75 , 2SJ680 , 2SJ681 , 2SK1062 , 2SK1359 , 2SK1365 , 2SK1489 , 2SK1826 , 2SK1827 .

History: STD5NK60ZT4 | SQ3419EEV | 2SK2601 | SST90R420S2 | OSG95R1K2PF | IPD034N06N3G | IRF7105Q

 

 
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