2SK3017 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

2SK3017 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSIII) 2SK3017 DC-DC Converter, Relay Drive and Motor Drive Unit: mmApplications Low drain-source ON resistance : RDS (ON) = 1.05 (typ.) High forward transfer admittance : |Yfs| = 7.0 S (typ.) Low leakage current : IDSS = 100 A (max) (VDS = 720 V) Enhancement mode : Vth = 2.0~4.0 V (VDS = 10

isc N-Channel MOSFET Transistor 2SK3017FEATURESDrain Current : I = 8.5A@ T =25D CDrain Source Voltage: V = 900V(Min)DSSStatic Drain-Source On-Resistance: R = 1.25(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi

SHINDENGENVX-2 Series Power MOSFET N-Channel Enhancement typeOUTLINE DIMENSIONS2SK3013Case : ITO-3P(FP16W60VX2)600V 16AFEATURESInput capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small.The static Rds(on) is small.The switching time is fast.Avalanche resistance guaranteed.APPLICATIONSwitching power supply of AC 100-200V inputInverter

SHINDENGENVX-2 Series Power MOSFET N-Channel Enhancement typeOUTLINE DIMENSIONS2SK3012Case : MTO-3P(Unit : mm)(F16W60VX2)600V 12AFEATURESInput capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small.The static Rds(on) is small.The switching time is fast.Avalanche resistance guaranteed.APPLICATIONSwitching power supply of AC 100-200V input

Data Sheet2.5V Drive Nch MOSFET 2SK3018UB Structure Dimensions (Unit : mm)Silicon N-channel MOSFET UMT3F2.00.90.32(3)Features1) Low on-resistance.2) Low voltage drive(2.5V drive).(1) (2)0.65 0.65 0.131.3Abbreviated symbol : KN ApplicationSwitching Packaging specifications Inner circuit(3)Package TapingTypeCode TCLBasic ordering u

2SK3019 Transistor 2.5V Drive Nch MOS FET 2SK3019 Dimensions (Unit : mm) Structure Silicon N-channel EMT3MOSFET 1.6 0.70.550.3( )3 Applications ( ) ( )2 1Interfacing, switching (30V, 100mA) 0.2 0.20.150.5 0.51.0(1)Source Features (2)Gate1) Low on-resistance. (3)Drain Abbreviated symbol : KN2) Fast switching speed. 3) Low voltage drive (2.5

2SK3018 Transistor 2.5V Drive Nch MOS FET 2SK3018 External dimensions (Unit : mm) Structure Silicon N-channel UMT3MOSFET 2.0 0.90.3 0.2 0.7(3) Applications Interfacing, switching (30V, 100mA) (2) (1)0.65 0.650.151.3(1) SourceEach lead has same dimensions Features (2) GateAbbreviated symbol : KN1) Low on-resistance. (3) Drain2) Fast switching s

Data Sheet2.5V Drive Nch MOSFET 2SK3019EB Structure Dimensions (Unit : mm)Silicon N-channel MOSFET EMT3F(3)Features1) High-speed switching.(1) (2)2) Low voltage drive(2.5V drive).3) Drive circuits can be simple.4) Parallel use is easy.Abbreviated symbol : KN ApplicationSwitching Packaging specifications Inner circuit(3)Package TapingType

2SK3019AFeatures Low ON-Resistance Fast Switching Speed Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1 N-Channel Halogen Free. Green Device (Note 1)MOSFET Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information) Maximum Ratings Operating Junction Temperature Range : -55C to +150C

2SK3019Features Low ON-Resistance Fast Switching Speed Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1 N-Channel Halogen Free Available Upon Request By Adding Suffix "-HF"MOSFET Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHSCompliant. See Ordering Information)Maximum Ratings Operating Junction Temperature Range : -55

SK3018Features Low On-Resistiance Low Input Capaacitance Maximum Ratings

Silicon Junction FETs (Small Signal) 2SK3012SK301Silicon N-Channel JunctionUnit : mmFor low-frequency amplification5.0 0.2 4.0 0.2For switching Features Low noise, high gain High gate-drain voltage VGDO+0.2 +0.20.45 0.1 0.45 0.11.27 1.27 Absolute Maximum Ratings (Ta = 25C)1 2 3Parameter Symbol Rating Unit1 : Drain2 : GateDrain-Source voltage VDSX

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-523 Plastic-Encapsulate MOSFETS 2SK3019 N-channel MOSFETID V(BR)DSS RDS(on)MAX SOT-523 8@4V30V100mA13@2.5V1. GATE2. SOURCE3. DRAINFEATURE APPLICATION Low on-resistance Interfacing , Switching Fast switching speed Low voltage drive makes this device ideal for Portable equipment Easily des

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate MOSFETS 2SK3018 N-channel MOSFET ID V(BR)DSS RDS(on)MAX SOT-323 8@4V30V 100mA13@2.5V1. GATE 2. SOURCE 3. DRAIN FEATURE APPLICATION Interfacing , Switching Low on-resistance Fast switching speed Low voltage drive makes this device ideal for Portable equipment

2SK3018 N-Channel Enhancement Mode MOSFET Features External dimensions 1) Low on-resistance. 2) Fast switching speed. 3) Low voltage drive (2.5V) makes this device ideal for portable equipment. 4) Easily designed drive circuits. 5) Easy to parallel. Applications Interfacing, switching (30V, 100mA) Units:mm Structure SOT-323S

Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.2SK3018SOT-23 (SOT-23 Field Effect Transistors)N-Channel Enhancement-Mode MOS FETsN-Channel Enhancement-Mode MOS FETsN-Channel Enhancement-Mode MOS FE

2SK3018W3 DRAINN-Channel POWER MOSFETP b Lead(Pb)-Free3121GATEDescription: *GateSOT-323(SC-70) Protection Diode* Low on-resistance.2 SOURCE* Fast switching speed.* Low voltage drive (2.5V) makes this device ideal for portable equipment.* Easily designed drive circuits.* Easy to parallel.Features:* Simple Drive Requirement* Small Package OutlineMaxi

2SK3019TN-Channel MOSFET3P b Lead(Pb)-Free12 1. GATEFEATURES:2. SOURCE* Low on-resistance3. DRAIN* Fast switching speed* Low voltage drive makes this device ideal for portable equipmentSOT-523(SC-75)* Easily designed drive circuits* Easy to parallelMaximum Ratings (TA=25Cunless otherwise specified)Characteristic Symbol Values UnitDrain-Source Voltage VDSS 3

FM120-M WILLASTHRU2SK3018LT1SOT-23 Plastic-Encapsulate MOSFETSFM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProductPackage outlineN-channel MOSFET Features Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123HFEATURES le surface mounted application i

FM120-M WILLASTHRU2SK3019TT1SOT-523 Plastic-Encapsulate MOSFETSFM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProductPackage outline N-channel MOSFET FeaturesFEATURES Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123H Low on-resistance Low

FM120-M WILLAS2SK3018WT1THRU SOT-323 Plastic-Encapsulate MOSFETSFM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProductPackage outlineFeatures Batch process design, excellent power dissipation offers better rMOSFET N-channel everse leakage current and thermal resistance.SOD-123H Low profile surface mounted applicat

Shenzhen Tuofeng Semiconductor Technology Co., Ltd 2SK3019 Transistor 2.5V Drive Nch MOS FET 2SK3019 External dimensions (Unit : mm) Structure Silicon N-channel EMT3MOSFET 1.6 0.70.550.3( )3 Applications ( ) ( )2 1Interfacing, switching (30V, 100mA) 0.2 0.20.150.5 0.51.0(1)Source Features (2)Gate1) Low on-resistance. (3)Drain Abbreviated sym

Shenzhen Tuofeng Semiconductor Technology Co., Ltd 2SK3018 Transistor2.5V Drive Nch MOS FET External dimensions (Unit : mm) 2SK3018 SOT-3232.0 0.90.3 0.2 0.7 Structure (3)Silicon N-channel MOSFET (2) (1)0.65 0.650.151.3(1) SourceEach lead has same dimensions Applications (2) GateAbbreviated symbol : KN(3) DrainInterfacing, switching (30V, 100mA) SO

Spec. No. : C800S3 Issued Date : 2010.07.19 CYStech Electronics Corp.Revised Date : 2013.12.10 Page No. : 1/8 ESD protected N-Channel Enhancement Mode MOSFET BVDSS 30V2SK3018S3 ID 100mA 8 RDSON(MAX) Description Low voltage drive(2V drive) makes this device ideal for portable equipment. High speed switching ESD protected device Pb-free lead pla

Spec. No. : C800C3 Issued Date : 2011.01.19 CYStech Electronics Corp.Revised Date : Page No. : 1/8 ESD protected N-Channel Enhancement Mode MOSFET BVDSS 30V2SK3019C3 ID 100mA 8 RDSON(MAX) Description Low voltage drive(2.5V drive) makes this device ideal for portable equipment. High speed switching ESD protected device Pb-free lead plating & ha

2SK3018W Rev.F Jul.-2019 DATA SHEET / Descriptions SOT-323 N MOS N-Channel MOSFET in a SOT-323 Plastic Package. / Features ,,, Low on-resistance, fast switching speed, low voltage drive, easily designed drive circuits, easy to parallel. Halo

2SK3018 Rev.F Apr.-2017 DATA SHEET / Descriptions SOT-23 N MOS N- CHANNEL MOSFET in a SOT-23 Plastic Package. / Features ,,, Low on-resistance, fast switching speed, low voltage drive, easily designed drive circuits, easy to parallel. / Applicatio

L2SK3018WT1GS-L2SK3018WT1GN-channel MOSFET100 mA, 30 V1. FEATURESWe declare that the material of product compliance withRoHS requirements and Halogen Free.S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101SC70(SOT-323) qualified and PPAP capable.Low on-resistance.Drain (3)Fast switching sp

LESHAN RADIO COMPANY, LTD.Silicon N-Channel MOSFET L2SK3019LT1GApplications3Interfacing,switching(30V,100mA)1Features 2Low on-resistanceSOT 23 Fast switching speed Low voltage drive(2.5V) makes this ideal for portable equipmentEquivalent circuitDrive circuits can be simpleDrainParallel use is easywe declare that the material of product compliance with RoHS

LESHAN RADIO COMPANY, LTD.Silicon N-channel MOSFETL2SK3018WT1G100 mA, 30 V3 Features 1) Low on-resistance. 12) Fast switching speed. 23) Low voltage drive (2.5V) makes this device ideal for portable equipment.4) Easily designed drive circuits. SC-705) Easy to parallel. We declare that the material of product compliance with RoHS requirements.N - ChannelMAX

SMD Type MOSFETN-Channel MOSFET2SK3018SOT-23-3Unit: mm+0.22.9 -0.1+0.10.4 -0.13 Features VDS (V) = 30VDrain ID = 0.1 A1 2 RDS(ON) 8 (VGS = 4V)+0.02+0.10.15 -0.020.95 -0.1+0.11.9 -0.2 RDS(ON) 13 (VGS = 2.5V)Gate1. Gate Gate2. SourceProtectionDiode3. DrainSource Absolute Maximum Ratings Ta = 25Par

SMD Type MOSFETN-Channel MOSFET2SK3019 Features Low on-resistance. Fast switching speed. Low voltage drive (2.5V) makes this Drain device ideal for portable equipment. Easily designed drive circuits.1 Gate Easy to parallel.Gate2 Source3 Drain GateProtectionSourceDiode Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Uni

SMD Type MOSFETN-Channel MOSFET2SK3018SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features VDS (V) = 30V1 2Drain ID = 0.1 A+0.1+0.050.95 -0.1 0.1 -0.011.9+0.1-0.1 RDS(ON) 8 (VGS = 4V) RDS(ON) 13 (VGS = 2.5V)Gate1. Gate2. Source Gate 3. DrainProtectionDiodeSource Absolute Maximum Ratings Ta = 25Parameter

2SK3018WN-Channel Enhancement Mode Field Effect TransistorProduct Summary V 30VDS I 300mAD R ( at V =10V) 8.0ohmDS(ON) GS R ( at V =4.5V) 13.0ohmDS(ON) GS ESD Protected Up to 2.5KV (HBM)General Description Trench Power MV MOSFET technology Voltage controlled small signal switch Low input Capacitance Fast Switching Speed Low

2SK3018N-Channel Power MOSFET MAXIMUM RATINGSMAXIMUM RATINGSMAXIMUM RATINGSMAXIMUM RATINGSCharacteristic Symbol Max UnitDrain-Source VoltageBVDSS 30 VGate- Source VoltageVGS +20 VDrain Current (continuous)IDR 100 mADrain Current (pulsed)IDRM 400 mATHERMAL CHARACTERISTICSTHERMAL CHARACTERISTICSTHERMAL CHARACTERISTICSTHERMAL CHARACTERISTICSCharacteristi

Plastic-Encapsulate Mosfets2SK3018FEATURESN-Channel MOSFET Fast switching speed and low on-resistance. Easily designed drived circuits.Absolute Maximum Ratings (TA=25oC, unless otherwise noted)1.Gate2.SourceSOT-23Parameter Symbol Ratings Unit3.DrainVDS 30Drain-Source Voltage VVGSGate-source Voltage V20DrainIDDrain Current (Continuous) 100 mAIDMDra

2SK3019 N-channel MOSFET SOT-523 FEATURES 3 Low on-resistance 1 Fast switching speed 1. GATE Low voltage drive makes this device ideal for portable equipment 22. SOURCE Easily designed drive circuits 3. DRAIN Easy to parallel Marking: KN Equivalent circuit MOSFET MAXIMUM RATINGS (Ta = 25C unless otherwise noted) Units Symbol Parameter Value VDS D

2SK3018WN-channel MOSFET FEATURES Low on-resistance Fast switching speed Low voltage drive makes this device ideal for portable equipmentLow voltage drive makes this device ideal for portable equipment Easily designed drive circuits Easy to parallel MOSFET MAXIMUM RATINGS (Ta = 25C unless otherwise noted)= 25C unless otherwise noted) MOSFET ELECTRICAL CHARACT

TAK CHEONG SEMICONDUCTOR150mW SOT-523 SURFACE MOUNT Plastic Package Green Product N-Channel MOSFET 3 Absolute Maximum Ratings TA = 25C unless otherwise noted Symbol Parameter Value Units2 VDS Drain-Source Voltage 30 V 1. Gate VGS Continuous Gate-Source Voltage 20V V 2. Source 1 3. Drain ID Continuous Drain Current 100 mA SOT-523 PD Power Dissipation 1

SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTDSOT-23 Plastic-Encapsulate MOSFETS2SK3018 N-Channel 30-V(D-S) MOSFET2SK3018 V(BR)DSS RDS(on)MAX IDSOT-23 SOT-3232.5@ 4.5V330V 0.1A1.GATE3.0@ 2.5V2.SOURCE3.DRAIN12 Features 1) Low on-resistance. 2) Fast switching speed. 3) Low voltage drive (2.5V) makes this device ideal for MARKING Equivalent Circuitpor

MMBT55512SK3018AO3400SI2305SOT-23 Plastic-Encapsulate MOSFETS2SK3018 N-channel MOSFETSOT-23FEATURES Low on-resistance Fast switching speed 1. GATE 2. SOURCE Low voltage drive makes this device ideal for portable equipment 3. DRAIN Easily designed drive circuits Easy to parallel Marking : KN MOSFET MAXIMUM RATINGS (Ta = 25C unless otherwise noted)

isc N-Channel MOSFET Transistor 2SK3013FEATURESDrain Current : I = 16A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.6(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

isc N-Channel MOSFET Transistor 2SK3012FEATURESDrain Current : I = 8A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 1.2(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid d