2SK3633 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

2SK3633 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (-MOS IV) 2SK3633 Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.35 (typ.) High forward transfer admittance: |Yfs| = 5.2 S (typ.) Low leakage current: IDSS = 100 A (VDS = 640 V) Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maxi

iscN-Channel MOSFET Transistor 2SK3633FEATURESLow drain-source on-resistance:RDS(ON) = 1.7 (MAX)Enhancement mode:Vth = 2 to 4 V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNIT

2SK363 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK363 For Audio Amplifier, Analog Switch, Constant Current Unit: mmand Impedance Converter Applications High breakdown voltage: VGDS = -40 V High input impedance: I = -1.0 nA (max) (V = -30 V) GSS GS Low R : R = 20 (typ.) (I = 15 mA) DS (ON) DS (ON) DSSMaximum Ratings (Ta == 25C)

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

www.DataSheet4U.comPower MOSFETs2SK3637Silicon N-channel power MOSFETUnit: mm15.50.5 3.00.3 3.20.15For PDP/For high-speed switching5 Features Low on-resistance, low Qg5 High avalanche resistance5(4.0)52.00.2 Absolute Maximum Ratings TC = 25C1.10.10.70.1Parameter Symbol Rating Unit5.450.3Drain-source surrender

This product complies with the RoHS Directive (EU 2002/95/EC).Power MOSFETs2SK3636Silicon N-channel power MOSFETUnit: mm4.60.29.90.32.90.2For high-speed switching 3.20.1 Features Avalanche energy capacity guaranteed: EAS > 20 mJ Gate-source surrender voltage VGSS = 30 V guaranteed1.40.2 High-speed switching: tf = 50 ns2.60.11.60.2

Databook.fxp 1/13/99 2:09 PM Page D-301/99 D-3Japanese Equivalent JFET TypesSilicon Junction Field-Effect Transistors2SK113 2SK152 2SK363 2SJ44JapaneseIFN113 IFN152 IFN363 IFP44InterFETNJ132 NJ132L NJ450 PJ99ProcessN N N P UnitChannel Channel Channel Channel Limit ParametersV 50 20 40 25 BVGSSMin1.0 0.1 1.0 1.0 nAIGSS( 20 V) (10 V) ( 30 V) (

SMD Type ICSMD Type MOSFETMOS Field Effect Transistor2SK3638TO-252Unit: mmFeatures+0.15 +0.16.50-0.15 2.30-0.15.30+0.2 0.50+0.8-0.2 -0.7Low on-state resistanceRDS(on)1 =8.5 m MAX. (VGS =10 V, ID =32A)RDS(on)2 =15 m MAX. (VGS =4.5 V, ID =18A)0.127Low Ciss: Ciss = 1100 pF TYP. 0.80+0.1 max-0.1Built-in gate protection diode+0.12.3 0.60-0.1 1Gate4.60+0.15-0

SMD Type ICSMD Type MOSFETMOS Field Effect Transistor2SK3639TO-252Unit: mmFeatures+0.15 +0.16.50-0.15 2.30-0.15.30+0.2 0.50+0.8-0.2 -0.7Low on-state resistanceRDS(on)1 =5.5 m MAX. (VGS =10 V, ID =32A)RDS(on)2 =8.5 m MAX. (VGS =4.5 V, ID =32 A)0.1270.80+0.1 max-0.1Low Ciss: Ciss = 2400 pF TYP.+0.12.3 0.60-0.1 1Gate4.60+0.15-0.152Drain3SourceAbsolut

SMD Type ICSMD Type MOSFETMOS Field Effect Transistor2SK3634TO-252Unit: mm+0.15 +0.16.50-0.15 2.30-0.1Features5.30+0.2 0.50+0.8-0.2 -0.7High voltage: VDSS = 200 VGate voltage rating: 30 V0.127RDS(on) =0.60 MAX. (VGS =10 V, ID =3.0 A)0.80+0.1 max-0.1Low Ciss: Ciss = 270 pF TYP. (VDS =10 V, VGS =0V)Built-in gate protection diode+0.12.3 0.60-0.1 1Gate4.60+

2SK3634www.VBsemi.twN-Channel 200 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Junction Temperature2000.245 at VGS = 10 V10 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Primary Side SwitchDTO-252 GSG D S N-Channel MOSFETABSOLUTE MAXIMUM RATINGS

isc N-Channel MOSFET Transistor 2SK3634DFEATURESDrain Current : I = 6A@ T =25D CDrain Source Voltage: V = 200V(Min)DSSStatic Drain-Source On-Resistance: R = 0.6(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi

isc N-Channel MOSFET Transistor 2SK3635DFEATURESDrain Current : I =8A@ T =25D CDrain Source Voltage: V = 200V(Min)DSSStatic Drain-Source On-Resistance: R = 0.43(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi

isc N-Channel MOSFET Transistor 2SK3634IFEATURESDrain Current : I = 6A@ T =25D CDrain Source Voltage: V = 200V(Min)DSSStatic Drain-Source On-Resistance: R = 0.6(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi

isc N-Channel MOSFET Transistor 2SK3635IFEATURESDrain Current : I =8A@ T =25D CDrain Source Voltage: V = 200V(Min)DSSStatic Drain-Source On-Resistance: R = 0.43(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi