2SK3633 datasheet, подбор замены

 ..1. Size:239K  toshiba
 2sk3633.pdf 

2SK3633 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type ( -MOS IV) 2SK3633 Switching Regulator Applications Unit mm Low drain-source ON-resistance RDS (ON) = 1.35 (typ.) High forward transfer admittance Yfs = 5.2 S (typ.) Low leakage current IDSS = 100 A (VDS = 640 V) Enhancement mode Vth = 2.0 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maxi

 ..2. Size:282K  inchange semiconductor
 2sk3633.pdf 

iscN-Channel MOSFET Transistor 2SK3633 FEATURES Low drain-source on-resistance RDS(ON) = 1.7 (MAX) Enhancement mode Vth = 2 to 4 V (VDS = 10 V, ID=1.0mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT

 8.1. Size:173K  toshiba
 2sk363.pdf 

2SK363 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK363 For Audio Amplifier, Analog Switch, Constant Current Unit mm and Impedance Converter Applications High breakdown voltage VGDS = -40 V High input impedance I = -1.0 nA (max) (V = -30 V) GSS GS Low R R = 20 (typ.) (I = 15 mA) DS (ON) DS (ON) DSS Maximum Ratings (Ta = = 25 C)

 8.2. Size:245K  renesas
 2sk3634-z.pdf 

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.3. Size:245K  renesas
 2sk3635-z.pdf 

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.4. Size:90K  panasonic
 2sk3637.pdf 

www.DataSheet4U.com Power MOSFETs 2SK3637 Silicon N-channel power MOSFET Unit mm 15.5 0.5 3.0 0.3 3.2 0.1 5 For PDP/For high-speed switching 5 Features Low on-resistance, low Qg 5 High avalanche resistance 5 (4.0) 5 2.0 0.2 Absolute Maximum Ratings TC = 25 C 1.1 0.1 0.7 0.1 Parameter Symbol Rating Unit 5.45 0.3 Drain-source surrender

 8.5. Size:204K  panasonic
 2sk3636.pdf 

 8.6. Size:88K  interfet
 2sk113 2sk152 2sk363 2sj44 ifn113 ifn152 ifn363 ifp44.pdf 

Databook.fxp 1/13/99 2 09 PM Page D-3 01/99 D-3 Japanese Equivalent JFET Types Silicon Junction Field-Effect Transistors 2SK113 2SK152 2SK363 2SJ44 Japanese IFN113 IFN152 IFN363 IFP44 InterFET NJ132 NJ132L NJ450 PJ99 Process N N N P Unit Channel Channel Channel Channel Limit Parameters V 50 20 40 25 BVGSS Min 1.0 0.1 1.0 1.0 nA IGSS ( 20 V) ( 10 V) ( 30 V) (

 8.7. Size:46K  kexin
 2sk3638.pdf 

SMD Type IC SMD Type MOSFET MOS Field Effect Transistor 2SK3638 TO-252 Unit mm Features +0.15 +0.1 6.50-0.15 2.30-0.1 5.30+0.2 0.50+0.8 -0.2 -0.7 Low on-state resistance RDS(on)1 =8.5 m MAX. (VGS =10 V, ID =32A) RDS(on)2 =15 m MAX. (VGS =4.5 V, ID =18A) 0.127 Low Ciss Ciss = 1100 pF TYP. 0.80+0.1 max -0.1 Built-in gate protection diode +0.1 2.3 0.60-0.1 1Gate 4.60+0.15 -0

 8.8. Size:46K  kexin
 2sk3639.pdf 

SMD Type IC SMD Type MOSFET MOS Field Effect Transistor 2SK3639 TO-252 Unit mm Features +0.15 +0.1 6.50-0.15 2.30-0.1 5.30+0.2 0.50+0.8 -0.2 -0.7 Low on-state resistance RDS(on)1 =5.5 m MAX. (VGS =10 V, ID =32A) RDS(on)2 =8.5 m MAX. (VGS =4.5 V, ID =32 A) 0.127 0.80+0.1 max -0.1 Low Ciss Ciss = 2400 pF TYP. +0.1 2.3 0.60-0.1 1Gate 4.60+0.15 -0.15 2Drain 3Source Absolut

 8.9. Size:45K  kexin
 2sk3634.pdf 

SMD Type IC SMD Type MOSFET MOS Field Effect Transistor 2SK3634 TO-252 Unit mm +0.15 +0.1 6.50-0.15 2.30-0.1 Features 5.30+0.2 0.50+0.8 -0.2 -0.7 High voltage VDSS = 200 V Gate voltage rating 30 V 0.127 RDS(on) =0.60 MAX. (VGS =10 V, ID =3.0 A) 0.80+0.1 max -0.1 Low Ciss Ciss = 270 pF TYP. (VDS =10 V, VGS =0V) Built-in gate protection diode +0.1 2.3 0.60-0.1 1Gate 4.60+

 8.10. Size:2116K  cn vbsemi
 2sk3634.pdf 

2SK3634 www.VBsemi.tw N-Channel 200 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) 175 C Junction Temperature 200 0.245 at VGS = 10 V 10 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Primary Side Switch D TO-252 G S G D S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS

 8.11. Size:286K  inchange semiconductor
 2sk3634d.pdf 

isc N-Channel MOSFET Transistor 2SK3634D FEATURES Drain Current I = 6A@ T =25 D C Drain Source Voltage V = 200V(Min) DSS Static Drain-Source On-Resistance R = 0.6 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi

 8.12. Size:286K  inchange semiconductor
 2sk3635d.pdf 

isc N-Channel MOSFET Transistor 2SK3635D FEATURES Drain Current I =8A@ T =25 D C Drain Source Voltage V = 200V(Min) DSS Static Drain-Source On-Resistance R = 0.43 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi

 8.13. Size:354K  inchange semiconductor
 2sk3634i.pdf 

isc N-Channel MOSFET Transistor 2SK3634I FEATURES Drain Current I = 6A@ T =25 D C Drain Source Voltage V = 200V(Min) DSS Static Drain-Source On-Resistance R = 0.6 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi

 8.14. Size:354K  inchange semiconductor
 2sk3635i.pdf 

isc N-Channel MOSFET Transistor 2SK3635I FEATURES Drain Current I =8A@ T =25 D C Drain Source Voltage V = 200V(Min) DSS Static Drain-Source On-Resistance R = 0.43 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi