2SK3633 - Даташиты. Аналоги. Основные параметры

2SK3633 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type ( -MOS IV) 2SK3633 Switching Regulator Applications Unit mm Low drain-source ON-resistance RDS (ON) = 1.35 (typ.) High forward transfer admittance Yfs = 5.2 S (typ.) Low leakage current IDSS = 100 A (VDS = 640 V) Enhancement mode Vth = 2.0 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maxi

iscN-Channel MOSFET Transistor 2SK3633 FEATURES Low drain-source on-resistance RDS(ON) = 1.7 (MAX) Enhancement mode Vth = 2 to 4 V (VDS = 10 V, ID=1.0mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT

2SK363 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK363 For Audio Amplifier, Analog Switch, Constant Current Unit mm and Impedance Converter Applications High breakdown voltage VGDS = -40 V High input impedance I = -1.0 nA (max) (V = -30 V) GSS GS Low R R = 20 (typ.) (I = 15 mA) DS (ON) DS (ON) DSS Maximum Ratings (Ta = = 25 C)

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

www.DataSheet4U.com Power MOSFETs 2SK3637 Silicon N-channel power MOSFET Unit mm 15.5 0.5 3.0 0.3 3.2 0.1 5 For PDP/For high-speed switching 5 Features Low on-resistance, low Qg 5 High avalanche resistance 5 (4.0) 5 2.0 0.2 Absolute Maximum Ratings TC = 25 C 1.1 0.1 0.7 0.1 Parameter Symbol Rating Unit 5.45 0.3 Drain-source surrender

Databook.fxp 1/13/99 2 09 PM Page D-3 01/99 D-3 Japanese Equivalent JFET Types Silicon Junction Field-Effect Transistors 2SK113 2SK152 2SK363 2SJ44 Japanese IFN113 IFN152 IFN363 IFP44 InterFET NJ132 NJ132L NJ450 PJ99 Process N N N P Unit Channel Channel Channel Channel Limit Parameters V 50 20 40 25 BVGSS Min 1.0 0.1 1.0 1.0 nA IGSS ( 20 V) ( 10 V) ( 30 V) (

SMD Type IC SMD Type MOSFET MOS Field Effect Transistor 2SK3638 TO-252 Unit mm Features +0.15 +0.1 6.50-0.15 2.30-0.1 5.30+0.2 0.50+0.8 -0.2 -0.7 Low on-state resistance RDS(on)1 =8.5 m MAX. (VGS =10 V, ID =32A) RDS(on)2 =15 m MAX. (VGS =4.5 V, ID =18A) 0.127 Low Ciss Ciss = 1100 pF TYP. 0.80+0.1 max -0.1 Built-in gate protection diode +0.1 2.3 0.60-0.1 1Gate 4.60+0.15 -0

SMD Type IC SMD Type MOSFET MOS Field Effect Transistor 2SK3639 TO-252 Unit mm Features +0.15 +0.1 6.50-0.15 2.30-0.1 5.30+0.2 0.50+0.8 -0.2 -0.7 Low on-state resistance RDS(on)1 =5.5 m MAX. (VGS =10 V, ID =32A) RDS(on)2 =8.5 m MAX. (VGS =4.5 V, ID =32 A) 0.127 0.80+0.1 max -0.1 Low Ciss Ciss = 2400 pF TYP. +0.1 2.3 0.60-0.1 1Gate 4.60+0.15 -0.15 2Drain 3Source Absolut

SMD Type IC SMD Type MOSFET MOS Field Effect Transistor 2SK3634 TO-252 Unit mm +0.15 +0.1 6.50-0.15 2.30-0.1 Features 5.30+0.2 0.50+0.8 -0.2 -0.7 High voltage VDSS = 200 V Gate voltage rating 30 V 0.127 RDS(on) =0.60 MAX. (VGS =10 V, ID =3.0 A) 0.80+0.1 max -0.1 Low Ciss Ciss = 270 pF TYP. (VDS =10 V, VGS =0V) Built-in gate protection diode +0.1 2.3 0.60-0.1 1Gate 4.60+

2SK3634 www.VBsemi.tw N-Channel 200 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) 175 C Junction Temperature 200 0.245 at VGS = 10 V 10 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Primary Side Switch D TO-252 G S G D S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS

isc N-Channel MOSFET Transistor 2SK3634D FEATURES Drain Current I = 6A@ T =25 D C Drain Source Voltage V = 200V(Min) DSS Static Drain-Source On-Resistance R = 0.6 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi

isc N-Channel MOSFET Transistor 2SK3635D FEATURES Drain Current I =8A@ T =25 D C Drain Source Voltage V = 200V(Min) DSS Static Drain-Source On-Resistance R = 0.43 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi

isc N-Channel MOSFET Transistor 2SK3634I FEATURES Drain Current I = 6A@ T =25 D C Drain Source Voltage V = 200V(Min) DSS Static Drain-Source On-Resistance R = 0.6 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi

isc N-Channel MOSFET Transistor 2SK3635I FEATURES Drain Current I =8A@ T =25 D C Drain Source Voltage V = 200V(Min) DSS Static Drain-Source On-Resistance R = 0.43 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi